SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20150233964A1

    公开(公告)日:2015-08-20

    申请号:US14427438

    申请日:2012-09-12

    CPC classification number: G01P15/008 G01P15/0897

    Abstract: In a semiconductor device, a heater is formed on a surface of a cap chip, and a first temperature sensor and a second temperature sensor are formed on a surface of a base chip. The cap chip and the base chip are laminated through a connection member such that the surfaces oppose to each other. The position of the heater is different from the positions of the temperature sensors in a direction of the lamination. The heater in the cap chip contacts bumps directly.

    Abstract translation: 在半导体装置中,在盖片的表面上形成加热器,在基片的表面上形成第一温度传感器和第二温度传感器。 盖片和基片通过连接构件层叠,使得表面彼此相对。 加热器的位置不同于温度传感器在层叠方向上的位置。 盖芯片中的加热器直接接触凸块。

    Semiconductor device
    3.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US09322837B2

    公开(公告)日:2016-04-26

    申请号:US14427438

    申请日:2012-09-12

    CPC classification number: G01P15/008 G01P15/0897

    Abstract: In a semiconductor device, a heater is formed on a surface of a cap chip, and a first temperature sensor and a second temperature sensor are formed on a surface of a base chip. The cap chip and the base chip are laminated through a connection member such that the surfaces oppose to each other. The position of the heater is different from the positions of the temperature sensors in a direction of the lamination. The heater in the cap chip contacts bumps directly.

    Abstract translation: 在半导体装置中,在盖片的表面上形成加热器,在基片的表面上形成第一温度传感器和第二温度传感器。 盖片和基片通过连接构件层叠,使得表面彼此相对。 加热器的位置不同于温度传感器在层叠方向上的位置。 盖芯片中的加热器直接接触凸块。

    Plasma processing method and plasma processing apparatus
    4.
    发明授权
    Plasma processing method and plasma processing apparatus 有权
    等离子体处理方法和等离子体处理装置

    公开(公告)号:US08642478B2

    公开(公告)日:2014-02-04

    申请号:US13214372

    申请日:2011-08-22

    CPC classification number: H01J37/02 H01J37/32091 H01J37/32165 H01J2237/3348

    Abstract: There is provided a plasma processing apparatus capable of optimizing a plasma process in response to various requirements of a micro processing by effectively controlling a RF bias function. In this plasma processing apparatus, a high frequency power RFH suitable for generating plasma of a capacitively coupling type is applied to an upper electrode 48 (or lower electrode 16) from a third high frequency power supply 66, and two high frequency powers RFL1 (0.8 MHz) and RFL2 (13 MHz) suitable for attracting ions are applied to the susceptor 16 from first and second high frequency power supplies 36 and 38, respectively, in order to control energy of ions incident onto a semiconductor wafer W from the plasma. A control unit 88 controls a total power and a power ratio of the first and second high frequency powers RFL1 and RFL2 depending on specifications, conditions or recipes of an etching process.

    Abstract translation: 提供了一种能够通过有效地控制RF偏置功能来响应于微处理的各种要求来优化等离子体处理的等离子体处理装置。 在该等离子体处理装置中,适用于产生电容耦合型等离子体的高频功率RFH从第三高频电源66施加到上电极48(或下电极16),并且将两个高频功率RFL1(0.8 MHz)和适合于吸引离子的RFL2(13MHz)分别从第一和第二高频电源36和38施加到基座16,以便控制从等离子体入射到半导体晶片W上的离子的能量。 控制单元88根据蚀刻处理的规格,条件或配方来控制第一和第二高频功率RFL1和RFL2的总功率和功率比。

    Evaluation device and circuit design method used for the same
    5.
    发明授权
    Evaluation device and circuit design method used for the same 失效
    评估装置和电路设计方法相同

    公开(公告)号:US07404157B2

    公开(公告)日:2008-07-22

    申请号:US10540973

    申请日:2003-12-25

    Applicant: Akira Tanabe

    Inventor: Akira Tanabe

    CPC classification number: G01R31/2621

    Abstract: There is provided an evaluation apparatus capable of measuring the I-V characteristic in the MOSFET AC operation with a high accuracy. There are also provided a circuit design method and a circuit design system used for the evaluation apparatus. In the evaluation apparatus (1), an AC input signal superimposing circuit (11) applies DC voltage to the MOSFET gate•source•drain•substrate and superimposes an AC input signal of very small voltage on the gate. An AC component measurement circuit (12) measures an AC component of the current flowing between the source and the drain at that time. A mutual conductance calculation circuit (13) compares the amplitude of the AC component of the current with the amplitude of the AC input signal and calculates, from this ratio, the mutual conductance in the frequency of the AC input signal of the MOSFET.

    Abstract translation: 提供了一种能够以高精度测量MOSFET交流运行中的I-V特性的评估装置。 还提供了用于评估装置的电路设计方法和电路设计系统。 在评价装置(1)中,交流输入信号叠加电路(11)向MOSFET栅极源极施加直流电压,并在栅极上叠加极小电压的交流输入信号。 交流分量测量电路(12)测量此时在源极和漏极之间流动的电流的交流分量。 电导计算电路(13)将电流的交流分量的振幅与交流输入信号的振幅进行比较,并从该比率计算出MOSFET的交流输入信号的频率的互导。

    Laser plumbing device, long member plumbing device and long member plumbing method
    6.
    发明授权
    Laser plumbing device, long member plumbing device and long member plumbing method 失效
    激光管道装置,长件管道装置和长件管道方法

    公开(公告)号:US06449856B1

    公开(公告)日:2002-09-17

    申请号:US09353151

    申请日:1999-07-14

    CPC classification number: G01C15/105 Y10S33/21

    Abstract: A laser plumbing device including a laser beam emitting device; a supporting device for supporting the laser beam emitting device and allowing swinging movements of the laser beam emitting device in a first direction X1 and a second direction Y1; a two-direction drive device for swinging the laser beam emitting device in the first and second directions X1 and Y1; an inclination angle detecting device for detecting an inclination angle of the laser beam emitting direction with respect to the vertical direction; and a controller for controlling the position of the laser beam emitting device by the two-direction drive device so as to change the laser beam emitting direction toward the vertical direction based on the angle detected by the inclination angle detecting device. The long member plumbing device and method utilizing the laser plumbing device.

    Abstract translation: 一种激光管道装置,包括激光束发射装置; 支撑装置,用于支撑激光束发射装置并允许激光束发射装置在第一方向X1和第二方向Y1上摆动; 用于在第一和第二方向X1和Y1上摆动激光束发射装置的双向驱动装置; 用于检测激光束发射方向相对于垂直方向的倾斜角度的倾斜角度检测装置; 以及控制器,用于通过双向驱动装置控制激光束发射装置的位置,以便基于由倾斜角度检测装置检测的角度将激光束发射方向改变为垂直方向。 使用激光管道装置的长件管件装置和方法。

    Dynamic random access memory device having a transfer circuit for
coupling a sense amplifier circuit with an accessed cell and a plate
line
    8.
    发明授权
    Dynamic random access memory device having a transfer circuit for coupling a sense amplifier circuit with an accessed cell and a plate line 失效
    动态随机存取存储器件具有用于将读出放大器电路与被访问的单元和板线耦合的传送电路

    公开(公告)号:US5351215A

    公开(公告)日:1994-09-27

    申请号:US011734

    申请日:1993-02-01

    Applicant: Akira Tanabe

    Inventor: Akira Tanabe

    CPC classification number: G11C11/4091 G11C11/4074

    Abstract: A dynamic random access memory device has memory cells each implemented by a series combination of a switching transistor and a storage capacitor coupled between one of the bit lines of an associated bit line pair and an associated plate line, and an input node of an associated sense amplifier circuit is coupled with the one of the bit lines and blocked from the associated plate line; however, the other input node of the associated sense amplifier circuit is blocked from the other bit line and coupled with the associated plate line so that the storage capacitor can produce relatively large initial differential voltage between the input nodes of the associated sense amplifier circuit.

    Abstract translation: 动态随机存取存储器件具有存储单元,每个存储器单元由开关晶体管和耦合在相关联的位线对的一个位线和相关联的板线之间的存储电容器的串联组合实现,并且相关联的感测输入节点 放大器电路与位线之一耦合并且从相关的板线阻挡; 然而,相关读出放大器电路的另一个输入节点被阻挡在另一个位线之外,并与相关的板极线耦合,使得存储电容器可以在相关读出放大器电路的输入节点之间产生相对较大的初始差分电压。

    Apparatus for applying anti-sticking agent on annealed oriented
electrical sheet steel in coil
    10.
    发明授权
    Apparatus for applying anti-sticking agent on annealed oriented electrical sheet steel in coil 失效
    在线圈上退火取向电工钢板上应用防粘剂的设备

    公开(公告)号:US4825807A

    公开(公告)日:1989-05-02

    申请号:US218300

    申请日:1988-07-13

    CPC classification number: C21D1/70 C23C24/00

    Abstract: An apparatus for applying a powder of anti-sticking agent on a coil of oriented electrical steel strip formed on a coiler comprises a movable assembly moving closer to and away from the coiler, a stationary hood attached to the movable assembly and having slit-like suction ports provided along the walls thereof, one end of the suction ports opening toward the coiler, a duct-collecting duct connected to the slit-like suction ports of the stationary hood, movable hoods provided on the stationary hood to vertically open at the top and bottom of the open end of the stationary hood, and a group of electrostatic powder spray guns directed toward the coiler in the stationary hood in which they are disposed. The movable assembly recedes and the movable hoods open as the diameter of the coil increases so that a given space is always maintained between the surface of the coiled strip and the movable hoods. The slit-like suction ports draw out only such portion of the anti-sticking agent as is about to flow out through the small space left between the coil and hood.

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