Abstract:
A semiconductor device with a transistor region has a first conductor pattern formed within a multilayer interconnect structure positioned under a signal line and above the transistor region. The first conductor pattern is coupled to ground or a power supply and overlaps the transistor region. The signal line overlaps the first conductor pattern.
Abstract:
In a semiconductor device, a heater is formed on a surface of a cap chip, and a first temperature sensor and a second temperature sensor are formed on a surface of a base chip. The cap chip and the base chip are laminated through a connection member such that the surfaces oppose to each other. The position of the heater is different from the positions of the temperature sensors in a direction of the lamination. The heater in the cap chip contacts bumps directly.
Abstract:
In a semiconductor device, a heater is formed on a surface of a cap chip, and a first temperature sensor and a second temperature sensor are formed on a surface of a base chip. The cap chip and the base chip are laminated through a connection member such that the surfaces oppose to each other. The position of the heater is different from the positions of the temperature sensors in a direction of the lamination. The heater in the cap chip contacts bumps directly.
Abstract:
There is provided a plasma processing apparatus capable of optimizing a plasma process in response to various requirements of a micro processing by effectively controlling a RF bias function. In this plasma processing apparatus, a high frequency power RFH suitable for generating plasma of a capacitively coupling type is applied to an upper electrode 48 (or lower electrode 16) from a third high frequency power supply 66, and two high frequency powers RFL1 (0.8 MHz) and RFL2 (13 MHz) suitable for attracting ions are applied to the susceptor 16 from first and second high frequency power supplies 36 and 38, respectively, in order to control energy of ions incident onto a semiconductor wafer W from the plasma. A control unit 88 controls a total power and a power ratio of the first and second high frequency powers RFL1 and RFL2 depending on specifications, conditions or recipes of an etching process.
Abstract:
There is provided an evaluation apparatus capable of measuring the I-V characteristic in the MOSFET AC operation with a high accuracy. There are also provided a circuit design method and a circuit design system used for the evaluation apparatus. In the evaluation apparatus (1), an AC input signal superimposing circuit (11) applies DC voltage to the MOSFET gate•source•drain•substrate and superimposes an AC input signal of very small voltage on the gate. An AC component measurement circuit (12) measures an AC component of the current flowing between the source and the drain at that time. A mutual conductance calculation circuit (13) compares the amplitude of the AC component of the current with the amplitude of the AC input signal and calculates, from this ratio, the mutual conductance in the frequency of the AC input signal of the MOSFET.
Abstract:
A laser plumbing device including a laser beam emitting device; a supporting device for supporting the laser beam emitting device and allowing swinging movements of the laser beam emitting device in a first direction X1 and a second direction Y1; a two-direction drive device for swinging the laser beam emitting device in the first and second directions X1 and Y1; an inclination angle detecting device for detecting an inclination angle of the laser beam emitting direction with respect to the vertical direction; and a controller for controlling the position of the laser beam emitting device by the two-direction drive device so as to change the laser beam emitting direction toward the vertical direction based on the angle detected by the inclination angle detecting device. The long member plumbing device and method utilizing the laser plumbing device.
Abstract:
A dynamic random access memory device has memory cells each implemented by a series combination of a switching transistor and a storage capacitor coupled between one of the bit lines of an associated bit line pair and an associated plate line, and an input node of an associated sense amplifier circuit is coupled with the one of the bit lines and blocked from the associated plate line; however, the other input node of the associated sense amplifier circuit is blocked from the other bit line and coupled with the associated plate line so that the storage capacitor can produce relatively large initial differential voltage between the input nodes of the associated sense amplifier circuit.
Abstract:
A steam injector system comprises a plurality of steam injectors each being provided with with a check valve adapted for water supply, a check valve adapted for steam supply, a check valve adapted for overflow and a check valve adapted for discharge and the respective water check valves, steam check valves, overflow check valves and discharge check valves are connected. In another aspect, a steam injector system comprises a plurality of first to last stage steam injectors arranged in series with each other, the last stage steam injector being provided with a relief valve disposed at a last stage overflow drain port, and a pressure pulsation absorbing device is disposed at least between the last stage overflow drain valve and the relief valve. A steam injector of an improved structure comprises an outer casing, a water nozzle disposed in the casing so as to extend axially therein, a central steam nozzle disposed inside the water nozzle coaxially therewith, a steam-water mixing nozzle disposed on a downstream side of the water nozzle and the central steam nozzle, and a peripheral steam nozzle mounted to the casing at a portion to supply steam from an outside into the steam-water mixing nozzle, wherein the steam is supplied so as to flow inside and outside the water.
Abstract:
An apparatus for applying a powder of anti-sticking agent on a coil of oriented electrical steel strip formed on a coiler comprises a movable assembly moving closer to and away from the coiler, a stationary hood attached to the movable assembly and having slit-like suction ports provided along the walls thereof, one end of the suction ports opening toward the coiler, a duct-collecting duct connected to the slit-like suction ports of the stationary hood, movable hoods provided on the stationary hood to vertically open at the top and bottom of the open end of the stationary hood, and a group of electrostatic powder spray guns directed toward the coiler in the stationary hood in which they are disposed. The movable assembly recedes and the movable hoods open as the diameter of the coil increases so that a given space is always maintained between the surface of the coiled strip and the movable hoods. The slit-like suction ports draw out only such portion of the anti-sticking agent as is about to flow out through the small space left between the coil and hood.