公开(公告)号：US20090284719A1

公开(公告)日：2009-11-19

申请号：US12025285

申请日：2008-05-15

申请人： Akifumi KAMIJIMA ,  Hideyuki YATSU ,  Hitoshi HATATE

发明人： Akifumi KAMIJIMA ,  Hideyuki YATSU ,  Hitoshi HATATE

IPC分类号： G03B27/68 ,  G03B27/42

CPC分类号： G03F7/7085 ,  G03F7/70616 ,  G03F7/70633 ,  G03F7/70783 ,  G03F9/7003

摘要： An alignment method of mask patterns in patterning processes includes forming a first layer by transferring a first mask pattern onto a wafer or a layer formed on the wafer, and forming a second layer by transferring a second mask pattern onto the first layer. The method particularly includes a first alignment step of performing, when forming the first layer, alignment for minimizing offset between a center position of the wafer and a center position of the first mask pattern and a residual rotation error between the wafer and the first mask pattern, and alignment based on an amount of deviation of superposition of the second layer pattern on the first layer pattern. The deviation is caused by linear expansion and contraction of a wafer and caused by an orthogonal error between a wafer and a mask pattern, and also the deviation is obtained by measuring in advance in pattering processes successively performed for a plurality of wafers. The method also includes a second alignment step of performing, when forming the second layer, only alignment for minimizing offset between a center position of the first layer pattern and a center position of the second mask pattern and a residual rotation error between the first layer pattern and the second mask pattern.

摘要翻译： 图案化处理中的掩模图案的对准方法包括通过将第一掩模图案转印到晶片上或形成在晶片上的层来形成第一层，以及通过将第二掩模图案转印到第一层上而形成第二层。 该方法特别包括第一对准步骤，当形成第一层时，进行对准以最小化晶片的中心位置和第一掩模图案的中心位置之间的偏移和晶片与第一掩模图案之间的残余旋转误差 并且基于第一层图案上的第二层图案的叠加的偏移量进行对准。 该偏差是由晶片的线性膨胀和收缩引起的，并且由晶片和掩模图案之间的正交误差引起，并且通过在多个晶片中连续执行的图案处理中预先测量来获得偏差。 该方法还包括第二对准步骤，当形成第二层时，仅进行对准以最小化第一层图案的中心位置和第二掩模图案的中心位置之间的偏移和第一层图案之间的残余旋转误差 和第二掩模图案。

公开(公告)号：US20090039056A1

公开(公告)日：2009-02-12

申请号：US11837189

申请日：2007-08-10

申请人： Akifumi KAMIJIMA ,  Hideyuki YATSU ,  Hitoshi HATATE

发明人： Akifumi KAMIJIMA ,  Hideyuki YATSU ,  Hitoshi HATATE

IPC分类号： B44C1/22

CPC分类号： G03F7/2026 ,  G03F7/00 ,  G11B5/3163

摘要： Provided is a planarizing method in which a planarization with high flatness can be performed, without being restricted by the distribution of film thickness in the applied resist film. The planarizing method comprises the steps of: forming a resist film on a film to be planarized formed on a substrate; exposing the resist film with the amounts of exposure light in respective sections into which an area in which the film to be planarized is formed is divided, the amounts of exposure light being determined so as to realize film thicknesses to be left for planarization of the resist film in the respective sections; developing the exposed resist film, to form a resist film pattern with a controlled distribution of film thickness; and etching the resist film pattern and the film to be planarized, until eliminating the thickness amounts to be eliminated of the film to be planarized.

摘要翻译： 提供一种平面化方法，其中可以进行具有高平坦度的平坦化，而不受所施加的抗蚀剂膜中的膜厚度的分布的限制。 平面化方法包括以下步骤：在基板上形成的平坦化膜上形成抗蚀剂膜; 将形成有平坦化膜的区域的各个部分中的曝光量曝光在抗蚀剂膜上，曝光光的量被确定为实现用于平版化抗蚀剂的膜厚度 各部分电影; 显影曝光的抗蚀剂膜，以形成具有受控的膜厚分布的抗蚀剂膜图案; 并蚀刻抗蚀剂膜图案和待平坦化的膜，直到消除要平坦化的膜的厚度消除量。

公开(公告)号：US20090027809A1

公开(公告)日：2009-01-29

申请号：US11781606

申请日：2007-07-23

申请人： Akifumi KAMIJIMA ,  Hideyuki YATSU ,  Hitoshi HATATE ,  Hisayoshi WATANABE ,  Atsushi YAMAGUCHI ,  Shingo MIYATA ,  Masahiro SAITO

发明人： Akifumi KAMIJIMA ,  Hideyuki YATSU ,  Hitoshi HATATE ,  Hisayoshi WATANABE ,  Atsushi YAMAGUCHI ,  Shingo MIYATA ,  Masahiro SAITO

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3116 ,  G11B5/3912 ,  G11B5/3967 ,  G11B2005/3996

摘要： Provided is a thin-film magnetic head in which the concentration of magnetic flux in the shield layer and the magnetic pole layer is suppressed. The thin-film magnetic head comprises a plurality of magnetic layers that have front surfaces reaching a head end surface on the ABS side. Further in this head, at least one of the plurality of magnetic layers has a shape in which: each of edges corresponding to both side surfaces extends so as to spread obliquely rearward with each other from an end of a straight edge in a track width direction corresponding to the front surface; and the front surface reaching the head end surface has a shape in which upper and lower corner portions in each of both end portions in the track width direction form obtuse angles or rounded shapes.

摘要翻译： 提供了一种薄膜磁头，其中屏蔽层和磁极层中的磁通量的浓度被抑制。 薄膜磁头包括多个磁性层，其前表面到达ABS侧的头端面。 此外，在该头部中，多个磁性层中的至少一个具有以下形状：对应于两个侧表面的每个边缘沿着轨道宽度方向从直边缘的端部彼此倾斜地向后延伸 对应于前表面; 并且到达头端面的前表面具有这样的形状，其中在轨道宽度方向上的两个端部中的每一个中的上角部和下角部形成钝角或圆形。

公开(公告)号：US20090170274A1

公开(公告)日：2009-07-02

申请号：US11967905

申请日：2007-12-31

申请人： Akifumi KAMIJIMA ,  Hideyuki YATSU

发明人： Akifumi KAMIJIMA ,  Hideyuki YATSU

IPC分类号： H01L21/02

CPC分类号： H01L27/016 ,  H01L27/0207 ,  H01L28/91

摘要： A method of forming a metal trench pattern in a thin-film device includes a step of depositing an electrode film on a substrate or on a base layer, a step of forming a resist pattern layer having a trench forming portion used to make a trench pattern, on the deposited electrode film, a step of forming a metal layer for filling spaces in the trench forming portion and for covering the trench forming portion, by performing plating through the formed resist pattern layer using the deposited electrode film as an electrode, a step of planarizing at least a top surface of the formed metal layer until the trench forming portion of the resist pattern layer is at least exposed, and a step of removing the exposed trench forming portion of the resist pattern layer.

摘要翻译： 在薄膜器件中形成金属沟槽图形的方法包括在基底或基底层上沉积电极膜的步骤，形成具有用于形成沟槽图案的沟槽形成部分的抗蚀剂图案层的步骤 在沉积的电极膜上，通过使用沉积的电极膜作为电极进行通过形成的抗蚀剂图案层的电镀，形成用于填充沟槽形成部分中的空间并覆盖沟槽形成部分的金属层的步骤，步骤 平坦化所形成的金属层的至少顶表面，直到抗蚀剂图案层的沟槽形成部分至少暴露为止;以及去除抗蚀剂图案层的暴露的沟槽形成部分的步骤。

公开(公告)号：US20130010390A1

公开(公告)日：2013-01-10

申请号：US13176134

申请日：2011-07-05

申请人： Hisayoshi WATANABE ,  Hitoshi HATATE ,  Hideyuki YATSU ,  Koichi OTANI

发明人： Hisayoshi WATANABE ,  Hitoshi HATATE ,  Hideyuki YATSU ,  Koichi OTANI

IPC分类号： G11B5/60 ,  G11B5/127

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/3163

摘要： A thin-film magnetic head includes a slider substrate and a write element. The slider substrate has an air bearing surface at one side thereof. The write element has a recording magnetic pole film. The recording magnetic pole film is disposed on a plane crossing the air bearing surface over the slider substrate and has a large-width portion and a small-width portion continuously arranged in the named order toward the air bearing surface. The small-width portion has a smaller width than the large-width portion. Of the large-width portion and the small-width portion, at least the small-width portion has a first portion and a second portion. The second portion is continuous with an upper end of the first portion and has both side faces inclined in such a direction as to increase the width. An external angle of the first portion formed by a plane parallel to a bottom face and the side face is larger than an external angle of the second portion formed by a plane parallel to the bottom face and the side face.

摘要翻译： 薄膜磁头包括滑块基板和写入元件。 滑块基板在其一侧具有空气轴承表面。 写元件具有记录磁极膜。 记录磁极膜设置在与滑动基板上的空气轴承表面相交的平面上，并且具有朝向空气轴承表面依次连续排列的大宽度部分和小宽度部分。 小宽度部分的宽度比宽度大的部分小。 在大宽度部分和小宽度部分中，至少小宽度部分具有第一部分和第二部分。 第二部分与第一部分的上端连续，并且具有在增加宽度的方向上倾斜的两个侧面。 由平行于底面和侧面的平面形成的第一部分的外角比由平行于底面和侧面的平面形成的第二部分的外角大。

公开(公告)号：US20110240593A1

公开(公告)日：2011-10-06

申请号：US12753557

申请日：2010-04-02

申请人： Hisayoshi WATANABE ,  Hideyuki YATSU ,  Masachika HASHINO ,  Koichi OTANI

发明人： Hisayoshi WATANABE ,  Hideyuki YATSU ,  Masachika HASHINO ,  Koichi OTANI

IPC分类号： G11B5/127

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/3163

摘要： A method of forming a magnetic pole section of a perpendicular magnetic recording type thin-film magnetic head and a method of manufacturing a perpendicular magnetic recording type thin-film magnetic head that include forming on an under layer a resist pattern having an opening, forming a first nonmagnetic layer, forming a first magnetic layer, forming a magnetic layer pattern, removing the resist pattern and then applying a resist layer onto a first nonmagnetic layer and a magnetic layer pattern, developing or ashing partway the applied resist layer and baking the remaining resist layer, removing the first nonmagnetic layer from at least a side surface of the magnetic layer pattern by etching with the baked resist layer being left, removing all of the resist layer and then forming a second nonmagnetic layer on at least the magnetic layer pattern, and forming a second magnetic layer on the formed second nonmagnetic layer.

摘要翻译： 形成垂直磁记录型薄膜磁头的磁极部分的方法和制造垂直磁记录型薄膜磁头的方法，该方法包括在下层上形成具有开口的抗蚀剂图案，形成 第一非磁性层，形成第一磁性层，形成磁性层图案，去除抗蚀剂图案，然后在第一非磁性层和磁性层图案上施加抗蚀剂层，在所施加的抗蚀剂层的中途显影或灰化，并烘烤剩余的抗蚀剂 层，通过对所述烘烤抗蚀剂层进行蚀刻而从所述磁性层图案的至少一个侧表面去除所述第一非磁性层，除去所有所述抗蚀剂层，然后在至少所述磁性层图案上形成第二非磁性层，以及 在形成的第二非磁性层上形成第二磁性层。