公开(公告)号：US20170345512A1

公开(公告)日：2017-11-30

申请号：US15267092

申请日：2016-09-15

Applicant: Advanced Micro Devices, Inc.

Inventor： Amro Awad ,  Sergey Blagodurov

IPC: G11C16/34 ,  G11C16/10 ,  G06F3/06 ,  G11C16/26

CPC classification number: G11C16/3495 ,  G11C16/10 ,  G11C16/26

Abstract: A non-volatile memory device having at least one non-volatile flash memory formatted with physical addresses to read and write data that is organized into blocks of data, wherein the blocks of data are organized into pages of data, and wherein the pages of data are organized into cells of data. The non-volatile memory device includes a non-volatile memory controller to direct read and write requests to the non-volatile flash memory for the storage and retrieval of data. The non-volatile memory controller includes a flash translation layer to correlate read and write requests for data having a logical address between the reading and writing the data to physical address location of the non-volatile flash memory. The flash translation layer, when writing to a physical address location, chooses between a wear-leveling circuit and a wear-limiting circuit to select the physical address location.

公开(公告)号：US20170277639A1

公开(公告)日：2017-09-28

申请号：US15361335

申请日：2016-11-25

Applicant: Advanced Micro Devices, Inc.

Inventor： Amro Awad ,  Sergey Blagodurov ,  Arkaprava Basu ,  Mark H. Oskin ,  Gabriel H. Loh ,  Andrew G. Kegel ,  David S. Christie ,  Kevin J. McGrath

IPC: G06F12/1036 ,  G06F12/1009

CPC classification number: G06F12/1036 ,  G06F12/1009 ,  G06F12/1027 ,  G06F2212/1024 ,  G06F2212/65 ,  G06F2212/683

Abstract: The described embodiments include a computing device with two or more translation lookaside buffers (TLB). During operation, the computing device updates an entry in the TLB based on a virtual address to physical address translation and metadata from a page table entry that were acquired during a page table walk. The computing device then computes, based on a lease length expression, a lease length for the entry in the TLB. Next, the computing device sets, for the entry in the TLB, a lease value to the lease length, wherein the lease value represents a time until a lease for the entry in the TLB expires, wherein the entry in the TLB is invalid when the associated lease has expired. The computing device then uses the lease value to control operations that are allowed to be performed using information from the entry in the TLB.

公开(公告)号：US10261916B2

公开(公告)日：2019-04-16

申请号：US15361335

申请日：2016-11-25

Applicant: Advanced Micro Devices, Inc.

Inventor： Amro Awad ,  Sergey Blagodurov ,  Arkaprava Basu ,  Mark H. Oskin ,  Gabriel H. Loh ,  Andrew G. Kegel ,  David S. Christie ,  Kevin J. McGrath

IPC: G06F12/10 ,  G06F12/1036 ,  G06F12/1009 ,  G06F12/1027

Abstract: The described embodiments include a computing device with two or more translation lookaside buffers (TLB). During operation, the computing device updates an entry in the TLB based on a virtual address to physical address translation and metadata from a page table entry that were acquired during a page table walk. The computing device then computes, based on a lease length expression, a lease length for the entry in the TLB. Next, the computing device sets, for the entry in the TLB, a lease value to the lease length, wherein the lease value represents a time until a lease for the entry in the TLB expires, wherein the entry in the TLB is invalid when the associated lease has expired. The computing device then uses the lease value to control operations that are allowed to be performed using information from the entry in the TLB.

公开(公告)号：US10121555B2

公开(公告)日：2018-11-06

申请号：US15267092

申请日：2016-09-15

Applicant: Advanced Micro Devices, Inc.

Inventor： Amro Awad ,  Sergey Blagodurov

IPC: G06F12/00 ,  G06F13/00 ,  G06F13/28 ,  G11C16/34 ,  G11C16/10 ,  G11C16/26 ,  G06F3/06

Abstract: A non-volatile memory device having at least one non-volatile flash memory formatted with physical addresses to read and write data that is organized into blocks of data, wherein the blocks of data are organized into pages of data, and wherein the pages of data are organized into cells of data. The non-volatile memory device includes a non-volatile memory controller to direct read and write requests to the non-volatile flash memory for the storage and retrieval of data. The non-volatile memory controller includes a flash translation layer to correlate read and write requests for data having a logical address between the reading and writing the data to physical address location of the non-volatile flash memory. The flash translation layer, when writing to a physical address location, chooses between a wear-leveling circuit and a wear-limiting circuit to select the physical address location.