MEMS image forming element with built-in voltage generator

    公开(公告)号:US12030772B2

    公开(公告)日:2024-07-09

    申请号:US16841044

    申请日:2020-04-06

    CPC classification number: B81B3/004 B81B3/0083 B81B7/008 B81B2201/047

    Abstract: The present disclosure describes an image forming element having a semiconductor chip with micro-electro-mechanical-system (MEMS) devices and voltage generators, each voltage generator being configured to generate a voltage used by one or more of the MEMS devices. A floating ground may be used to add a voltage to the voltage generated by the voltage generators. The semiconductor chip may include electrical connections, where each voltage generator is configured to provide the voltage to the one or more MEMS devices through the electrical connections. The MEMS devices may define a boundary in the semiconductor chip within which the MEMS devices, the voltage generators, and the electrical connections are located. Each MEMS device may generate an electrostatic field to manipulate an electron beamlet of a multi-beam charged particle microscope. The MEMS devices may be organized into groups based on a distance to a reference location (e.g., optical axis) in the semiconductor chip.

    Multi-beam inspection apparatus
    2.
    发明授权

    公开(公告)号:US11232928B2

    公开(公告)日:2022-01-25

    申请号:US16729190

    申请日:2019-12-27

    Abstract: A multi-beam inspection apparatus including an improved source conversion unit is disclosed. The improved source conversion unit may comprise a micro-structure deflector array including a plurality of multipole structures. The micro-deflector deflector array may comprise a first multipole structure having a first radial shift from a central axis of the array and a second multipole structure having a second radial shift from the central axis of the array. The first radial shift is larger than the second radial shift, and the first multipole structure comprises a greater number of pole electrodes than the second multipole structure to reduce deflection aberrations when the plurality of multipole structures deflects a plurality of charged particle beams.

    Multi-beam inspection apparatus
    3.
    发明授权

    公开(公告)号:US12142453B2

    公开(公告)日:2024-11-12

    申请号:US17583176

    申请日:2022-01-24

    Abstract: A multi-beam inspection apparatus including an improved source conversion unit is disclosed. The improved source conversion unit may comprise a micro-structure deflector array including a plurality of multipole structures. The micro-deflector deflector array may comprise a first multipole structure having a first radial shift from a central axis of the array and a second multipole structure having a second radial shift from the central axis of the array. The first radial shift is larger than the second radial shift, and the first multipole structure comprises a greater number of pole electrodes than the second multipole structure to reduce deflection aberrations when the plurality of multipole structures deflects a plurality of charged particle beams.

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