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公开(公告)号：US10585363B2
公开(公告)日：2020-03-10
申请号：US15575069
申请日：2016-03-14
Applicant: ASML Netherlands B.V.
Inventor： Simon Gijsbert Josephus Mathijssen , Arie Jeffrey Den Boef , Alessandro Polo , Patricius Aloysius Jacobus Tinnemans , Adrianus Johannes Hendrikus Schellekens , Elahe Yeganegi Dastgerdi , Willem Marie Julia Marcel Coene , Erik Willem Bogaart , Simon Reinald Huisman
Abstract: An alignment system, method and lithographic apparatus are provided for determining the position of an alignment mark, the alignment system comprising a first system configured to produce two overlapping images of the alignment mark that are rotated by around 180 degrees with respect to one another, and a second system configured to determine the position of the alignment mark from a spatial distribution of an intensity of the two overlapping images.
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公开(公告)号：US11243470B2
公开(公告)日：2022-02-08
申请号：US16331547
申请日：2017-08-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Nitish Kumar , Adrianus Johannes Hendrikus Schellekens , Sietse Thijmen Van Der Post , Ferry Zijp , Willem Maria Julia Marcel Coene , Peter Danny Van Voorst , Duygu Akbulut , Sarathi Roy
IPC: G03F7/20
Abstract: An optical system delivers illuminating radiation and collects radiation after interaction with a target structure on a substrate. A measurement intensity profile is used to calculate a measurement of the property of the structure. The optical system may include a solid immersion lens. In a method, the optical system is controlled to obtain a first intensity profile using a first illumination profile and a second intensity profile using a second illumination profile. The profiles are used to derive a correction for mitigating the effect of, e.g., ghost reflections. Using, e.g., half-moon illumination profiles in different orientations, the method can measure ghost reflections even where a solid immersion lens would cause total internal reflection. The optical system may include a contaminant detection system to control a movement based on received scattered detection radiation. The optical system may include an optical component having a dielectric coating to enhance evanescent wave interaction.
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公开(公告)号：US08994944B2
公开(公告)日：2015-03-31
申请号：US14149723
申请日：2014-01-07
Applicant: ASML Netherlands B.V.
Inventor： Hugo Augustinus Joseph Cramer , Arie Jeffrey Den Boef , Henricus Johannes Lambertus Megens , Hendrik Jan Hidde Smilde , Adrianus Johannes Hendrikus Schellekens , Michael Kubis
CPC classification number: G03F7/70641 , G01B11/02 , G01B11/22 , G01B11/24 , G01B11/30 , G01N21/47 , G01N21/88 , G03F7/70608 , G03F7/70625 , G03F7/70633 , G03F7/7065
Abstract: In a method of determining the focus of a lithographic apparatus used in a lithographic process on a substrate, the lithographic process is used to form a structure on the substrate, the structure having at least one feature which has an asymmetry in the printed profile which varies as a function of the focus of the lithographic apparatus on the substrate. A first image of the periodic structure is formed and detected while illuminating the structure with a first beam of radiation. The first image is formed using a first part of non-zero order diffracted radiation. A second image of the periodic structure is formed and detected while illuminating the structure with a second beam of radiation. The second image is formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part in a diffraction spectrum. The ratio of the intensities of the measured first and second portions of the spectra is determined and used to determine the asymmetry in the profile of the periodic structure and/or to provide an indication of the focus on the substrate. In the same instrument, an intensity variation across the detected portion is determined as a measure of process-induced variation across the structure. A region of the structure with unwanted process variation can be identified and excluded from a measurement of the structure.
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