公开(公告)号：US11610774B2

公开(公告)日：2023-03-21

申请号：US17037481

申请日：2020-09-29

申请人： ASM IP Holding B.V.

发明人： Aurélie Kuroda ,  Atsuki Fukazawa

IPC分类号： H01L21/02

摘要： Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process are provided. The methods may include: forming a topographically selective silicon oxide film by a plasma enhanced atomic layer deposition (PEALD) process or a cyclical plasma-enhanced chemical vapor deposition (cyclical PECVD) process. The methods may also include: forming a silicon oxide film either selectivity over the horizontal surfaces of a non-planar substrate or selectively over the vertical surfaces of a non-planar substrate.

公开(公告)号：US20190148224A1

公开(公告)日：2019-05-16

申请号：US15815483

申请日：2017-11-16

申请人： ASM IP Holding B.V.

发明人： Aurélie Kuroda ,  Akiko Kobayashi ,  Dai Ishikawa

IPC分类号： H01L21/768 ,  H01L21/285 ,  H01L23/532

摘要： A method of selectively depositing a capping layer structure on a semiconductor device structure is disclosure. The method may include; providing a partially fabricated semiconductor device structure comprising a surface including a metallic interconnect material, a metallic barrier material, and a dielectric material. The method may also include; selectively depositing a first metallic capping layer over the metallic barrier material and over the metallic interconnect material relative to the dielectric material; and selectively depositing a second metallic capping layer over the first metallic capping layer relative to the dielectric material. Semiconductor device structures including a capping layer structure are also disclosed.

公开(公告)号：US10910262B2

公开(公告)日：2021-02-02

申请号：US15815483

申请日：2017-11-16

申请人： ASM IP Holding B.V.

发明人： Aurélie Kuroda ,  Akiko Kobayashi ,  Dai Ishikawa

IPC分类号： H01L21/00 ,  H01L21/768 ,  H01L23/532 ,  H01L21/285

摘要： A method of selectively depositing a capping layer structure on a semiconductor device structure is disclosure. The method may include; providing a partially fabricated semiconductor device structure comprising a surface including a metallic interconnect material, a metallic barrier material, and a dielectric material. The method may also include; selectively depositing a first metallic capping layer over the metallic barrier material and over the metallic interconnect material relative to the dielectric material; and selectively depositing a second metallic capping layer over the first metallic capping layer relative to the dielectric material. Semiconductor device structures including a capping layer structure are also disclosed.

公开(公告)号：US20210225643A1

公开(公告)日：2021-07-22

申请号：US17152592

申请日：2021-01-19

申请人： ASM IP Holding B.V.

发明人： Aurélie Kuroda ,  Ryoko Zhang ,  Masaki Tokunaga ,  Ling-Chi Hwang ,  Makoto Igarashi

IPC分类号： H01L21/02 ,  C23C16/34 ,  C23C16/44 ,  C23C16/509

摘要： Methods and systems for pretreating a surface prior to depositing silicon nitride on the surface are disclosed. Exemplary methods include pretreating the surface by exposing the surface to activated species formed from one or more gases comprising nitrogen and hydrogen. The step of pretreating can additionally include a step of exposing the surface to a gas comprising silicon.

公开(公告)号：US20190249303A1

公开(公告)日：2019-08-15

申请号：US16252567

申请日：2019-01-18

申请人： ASM IP Holding B.V.

发明人： Aurélie Kuroda ,  Atsuki Fukazawa

IPC分类号： C23C16/455 ,  C23C16/40

CPC分类号： C23C16/45553 ,  C07F7/0838 ,  C07F7/10 ,  C23C16/402 ,  C23C16/45538

摘要： A chemical precursor and a method for depositing a silicon oxide film on a surface of a substrate within a reaction space by plasma-enhanced atomic layer deposition are disclosed. The chemical precursors may include a Si—O—Si skeleton or a Si—N—Si skeleton.

公开(公告)号：US20230143580A1

公开(公告)日：2023-05-11

申请号：US18092219

申请日：2022-12-31

申请人： ASM IP Holding B.V.

发明人： Aurélie Kuroda ,  Atsuki Fukazawa

IPC分类号： H01L21/02

CPC分类号： H01L21/02274 ,  H01L21/02211 ,  H01L21/02164

摘要： Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process are provided. The methods may include: forming a topographically selective silicon oxide film by a plasma enhanced atomic layer deposition (PEALD) process or a cyclical plasma-enhanced chemical vapor deposition (cyclical PECVD) process. The methods may also include: forming a silicon oxide film either selectivity over the horizontal surfaces of a non-planar substrate or selectively over the vertical surfaces of a non-planar substrate.

公开(公告)号：US20210104399A1

公开(公告)日：2021-04-08

申请号：US17037481

申请日：2020-09-29

申请人： ASM IP Holding B.V.

发明人： Aurélie Kuroda ,  Atsuki Fukazawa

IPC分类号： H01L21/02

摘要： Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process are provided. The methods may include: forming a topographically selective silicon oxide film by a plasma enhanced atomic layer deposition (PEALD) process or a cyclical plasma-enhanced chemical vapor deposition (cyclical PECVD) process. The methods may also include: forming a silicon oxide film either selectivity over the horizontal surfaces of a non-planar substrate or selectively over the vertical surfaces of a non-planar substrate.

公开(公告)号：US09947582B1

公开(公告)日：2018-04-17

申请号：US15612962

申请日：2017-06-02

申请人： ASM IP HOLDING B.V.

发明人： Aurélie Kuroda ,  Shang Chen ,  Takahiro Onuma ,  Dai Ishikawa

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L23/522

CPC分类号： H01L21/76888 ,  H01L21/76849 ,  H01L23/53238

摘要： Processes are provided herein for protecting metal thin films from oxidation when exposed to an oxidizing environment, such as the ambient atmosphere. The processes may comprise a protective treatment including exposing the metal thin film to a silicon-containing precursor at a temperature of about 200° C. or less in order to selectively adsorb a silicon-containing protective layer on the metal thin film. The silicon-containing protective layer may reduce or substantially prevent the underlying metal thin film from oxidation.