Processes are provided herein for protecting metal thin films from oxidation when exposed to an oxidizing environment, such as the ambient atmosphere. The processes may comprise a protective treatment including exposing the metal thin film to a silicon-containing precursor at a temperature of about 200° C. or less in order to selectively adsorb a silicon-containing protective layer on the metal thin film. The silicon-containing protective layer may reduce or substantially prevent the underlying metal thin film from oxidation.