公开(公告)号：US10686033B2

公开(公告)日：2020-06-16

申请号：US16186027

申请日：2018-11-09

Applicant: APPLIED Materials, Inc.

Inventor： Min Gyu Sung ,  Jae Young Lee ,  Johannes Van Meer ,  Sony Varghese ,  Naushad K. Variam

IPC: H01L29/06 ,  H01L21/76 ,  H01L29/417 ,  H01L21/762 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/66

Abstract: Disclosed are methods of forming a semiconductor device, such as a finFET device. One non-limiting method may include providing a semiconductor device including a substrate and a plurality of fins extending from the substrate, and forming a source trench isolation (STI) material over the semiconductor device. The method may further include performing a fin cut by removing a first fin section of the plurality of fins and a first portion of the STI material, and forming a second STI material over a second fin section of the plurality of fins, wherein the second fin section is left remaining following removal of the first fin section. The method may further include recessing the STI material and the second STI material, forming a spin-on-carbon (SOC) layer over the semiconductor device, and implanting the STI material and the second STI material through the SOC layer.

公开(公告)号：US20200152519A1

公开(公告)日：2020-05-14

申请号：US16186004

申请日：2018-11-09

Applicant: APPLIED Materials, Inc.

Inventor： Min Gyu Sung ,  Jae Young Lee ,  Johannes Van Meer ,  Sony Varghese ,  Naushad K. Variam

IPC: H01L21/8234 ,  H01L29/78 ,  H01L29/10 ,  H01L27/088 ,  H01L21/768

Abstract: Disclosed are methods of forming a semiconductor device, such as a finFET device. One non-limiting method may include providing a semiconductor device including a substrate and a plurality of fins extending from the substrate, and forming a source trench isolation (STI) material over the semiconductor device. The method may further include recessing the STI material to reveal an upper portion of the plurality of fins, implanting the semiconductor device, and forming a capping layer over the plurality of fins and the STI material. The method may further include removing a first fin section of the plurality of fins and a first portion of the capping layer, wherein a second fin section of the plurality of fins remains following removal of the first fin section.

公开(公告)号：US10692775B2

公开(公告)日：2020-06-23

申请号：US16186004

申请日：2018-11-09

Applicant: APPLIED Materials, Inc.

Inventor： Min Gyu Sung ,  Jae Young Lee ,  Johannes Van Meer ,  Sony Varghese ,  Naushad K. Variam

IPC: H01L21/82 ,  H01L21/8234 ,  H01L21/768 ,  H01L29/10 ,  H01L27/088 ,  H01L29/78

Abstract: Disclosed are methods of forming a semiconductor device, such as a finFET device. One non-limiting method may include providing a semiconductor device including a substrate and a plurality of fins extending from the substrate, and forming a source trench isolation (STI) material over the semiconductor device. The method may further include recessing the STI material to reveal an upper portion of the plurality of fins, implanting the semiconductor device, and forming a capping layer over the plurality of fins and the STI material. The method may further include removing a first fin section of the plurality of fins and a first portion of the capping layer, wherein a second fin section of the plurality of fins remains following removal of the first fin section.

公开(公告)号：US20200152735A1

公开(公告)日：2020-05-14

申请号：US16186027

申请日：2018-11-09

Applicant: APPLIED Materials, Inc.

Inventor： Min Gyu Sung ,  Jae Young Lee ,  Johannes Van Meer ,  Sony Varghese ,  Naushad K. Variam

IPC: H01L29/06 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/762

Abstract: Disclosed are methods of forming a semiconductor device, such as a finFET device. One non-limiting method may include providing a semiconductor device including a substrate and a plurality of fins extending from the substrate, and forming a source trench isolation (STI) material over the semiconductor device. The method may further include performing a fin cut by removing a first fin section of the plurality of fins and a first portion of the STI material, and forming a second STI material over a second fin section of the plurality of fins, wherein the second fin section is left remaining following removal of the first fin section. The method may further include recessing the STI material and the second STI material, forming a spin-on-carbon (SOC) layer over the semiconductor device, and implanting the STI material and the second STI material through the SOC layer.