EPI CHAMBER WITH FULL WAFER LASER HEATING

    公开(公告)号:US20220068675A1

    公开(公告)日:2022-03-03

    申请号:US17011781

    申请日:2020-09-03

    Abstract: An apparatus for heating a substrate within a thermal processing chamber is disclosed. The apparatus includes a chamber body, a gas inlet, a gas outlet, an upper window, a lower window, a substrate support, and an upper heating device. The upper heating device is a laser heating device and includes one or more laser assemblies. The laser assemblies include light sources, a cooling plate, optical fibers, and irradiation windows.

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