公开(公告)号：US10290459B2

公开(公告)日：2019-05-14

申请号：US16163226

申请日：2018-10-17

Applicant: Applied Materials, Inc.

Inventor： Govinda Raj ,  Simon Yavelberg ,  Ramprakash Sankarakrishnan

IPC: H01J23/00 ,  B22F5/10 ,  B33Y80/00 ,  B22F3/105 ,  H01J25/50

Abstract: Magnetron configurations that provide more efficient and/or more uniform cooling characteristics and methods for forming the magnetrons are provided. The magnetron includes one or more flow directing structures disposed between parallel cooling fins. The flow directing structures direct air flow across various surfaces of the cooling fins that otherwise would be obstructed by magnetron components, reducing the incidence and/or magnitude of hot spots on the cooling fins and/or on other magnetron components. The flow directing structures also adjust flow rates to improve cooling efficiency.

公开(公告)号：US12027388B2

公开(公告)日：2024-07-02

申请号：US17104342

申请日：2020-11-25

Applicant: Applied Materials, Inc.

Inventor： Vilen K. Nestorov ,  Kaushik Rao ,  Govinda Raj

IPC: H01L21/67 ,  H01K1/14 ,  H05B3/00 ,  H05B3/10

CPC classification number: H01L21/67115 ,  H01K1/14 ,  H05B3/0047 ,  H05B3/0033 ,  H05B3/0038 ,  H05B2203/002 ,  H05B2203/006 ,  H05B2203/014

Abstract: Examples disclosed herein relate to a lamp configured to provide heat for a processing chamber. The lamp includes a housing filled with a gas. A filament is disposed within the housing. The filament has an upper diameter, a lower diameter, and a length. A pair of electrodes is electrically coupled to the filament. A pair of pins is electrically coupled to the pair of electrodes. The pair of pins is configured to transfer energy to the filament. A ratio between either the upper diameter or the lower diameter to the length is about 0.3. The upper diameter is not equal to the lower diameter.

公开(公告)号：US11330673B2

公开(公告)日：2022-05-10

申请号：US16189810

申请日：2018-11-13

Applicant: Applied Materials, Inc.

Inventor： Govinda Raj

IPC: H05B3/14 ,  H01L21/67 ,  H05B1/02 ,  H01L21/687

Abstract: A heater for a semiconductor processing chamber is disclosed that includes a ceramic body, and a resistive heating element embedded in the ceramic body, the resistive heating element disposed in a heater coil having an inner central sector and an outer central sector, the inner central sector having a plurality of first peaks and the outer central sector having a plurality of second peaks, wherein the number of first peaks is less than about fifty-six, and the number of second peaks is less than about eighty.

公开(公告)号：US10662529B2

公开(公告)日：2020-05-26

申请号：US15141443

申请日：2016-04-28

Applicant: Applied Materials, Inc.

Inventor： Govinda Raj ,  Hanish Kumar ,  Lin Zhang ,  Stanley Wu

IPC: C23C16/455 ,  C23C16/44 ,  H01J37/32 ,  C23C16/507

Abstract: Techniques are disclosed for methods and apparatuses for reducing particle contamination formation in a high temperature processing chamber with a cooled gas feed block. The cooled gas feed has a body. The body has a main center portion having a top surface and a bottom surface. The body also has a flange extending outward from the bottom surface of the main center portion. A gas channel is disposed through the body. The gas channel has an inlet formed in the top surface of the main center portion and an outlet formed in the bottom surface of the main center portion. The body also has a center coolant channel. The center coolant channel has a first portion having an inlet formed in the top surface of the main center portion, and a second portion coupled to the first portion, the second portion having an outlet formed a sidewall of the flange.

公开(公告)号：US10553473B2

公开(公告)日：2020-02-04

申请号：US14975119

申请日：2015-12-18

Applicant: Applied Materials, Inc.

Inventor： Govinda Raj ,  Kadthala R. Narendrnath ,  Bopanna Ichettira Vasantha ,  Simon Yavelberg

IPC: H01L21/687 ,  H01L21/67 ,  C23C16/458 ,  B33Y10/00 ,  B33Y80/00

Abstract: An edge ring and process for fabricating an edge ring are disclosed herein. In one embodiment, an edge ring includes an annular body and a plurality of thermal breaks disposed within the annular body. The thermal breaks are disposed perpendicular to a center line of the annular body of the edge ring.

公开(公告)号：US10177014B2

公开(公告)日：2019-01-08

申请号：US14050196

申请日：2013-10-09

Applicant: Applied Materials, Inc.

Inventor： Govinda Raj ,  Daniel Martin ,  Robert T. Hirahara ,  Ashish Bhatnagar ,  Bopanna Vasanth ,  Prashanth Rao ,  Kadthala R. Narendrnath

IPC: H01L21/67 ,  H01L21/687 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306

Abstract: An apparatus for a substrate support heater and associated chamber components having reduced energy losses are provided. In one embodiment, a substrate support heater is provided. The substrate support heater includes a heater body having a first surface to receive a substrate and a second surface opposing the first surface, a heating element disposed in the heater body between the first surface and the second surface, and a thermal barrier disposed on the second surface of the heater body, wherein the thermal barrier comprises a first layer and a second layer disposed on the first layer.

公开(公告)号：US12198967B2

公开(公告)日：2025-01-14

申请号：US17277152

申请日：2019-07-03

Applicant: Applied Materials, Inc.

Inventor： Kaushik Rao ,  Govinda Raj ,  Anubhav Srivastava ,  Santhosh Kumar Pillappa

IPC: H01L21/683 ,  H01J37/32 ,  H01T23/00

Abstract: The present disclosure generally relates to a substrate support that includes a body having a substrate receiving surface, the body comprising a dielectric material. The body also includes a first foil embedded in the body below the substrate receiving surface. The body also includes an electrically conductive mesh embedded in the body below the first foil. The body also includes a center tap structure formed in a bottom surface of the body that is in electrical communication with the mesh.

公开(公告)号：US11676802B2

公开(公告)日：2023-06-13

申请号：US17095577

申请日：2020-11-11

Applicant: Applied Materials, Inc.

Inventor： Wendell Glenn Boyd, Jr. ,  Govinda Raj ,  Matthew James Busche

IPC: G01D5/26 ,  H01J37/32 ,  H01L21/683 ,  C23C16/458 ,  G01L11/02 ,  G01D11/24

CPC classification number: H01J37/3244 ,  C23C16/4586 ,  H01J37/32009 ,  H01J37/3299 ,  H01J37/32697 ,  H01J37/32715 ,  H01L21/6831 ,  H01L21/6833 ,  G01D5/26 ,  G01D5/266 ,  G01D5/268 ,  G01D11/245 ,  G01L11/025 ,  H01J2237/334

Abstract: Embodiments disclosed herein include a substrate support having a sensor assembly, and processing chamber having the same. In one embodiment, a substrate support has a puck. The puck has a workpiece support surface and a gas hole exiting the workpiece support surface. A sensor assembly is disposed in the gas hole and configured to detect a metric indicative of a deflection of a workpiece disposed on the workpiece support surface, wherein the sensor assembly is configured to provide the benefit of allowing gas to flow past the sensor assembly when positioned in the gas hole.

公开(公告)号：US11114326B2

公开(公告)日：2021-09-07

申请号：US16293437

申请日：2019-03-05

Applicant: Applied Materials, Inc.

Inventor： Wendell Glenn Boyd, Jr. ,  Jim Zhongyi He ,  Ramesh Gopalan ,  Robert T. Hirahara ,  Govinda Raj

IPC: H01L21/683 ,  H01J37/32

Abstract: Methods for chucking and de-chucking a substrate from an electrostatic chucking (ESC) substrate support to reduce scratches of the non-active surface of a substrate include simultaneously increasing a voltage applied to a chucking electrode embedded in the ESC substrate support and a backside gas pressure in a backside volume disposed between the substrate and the substrate support to chuck the substrate and reversing the process to de-chuck the substrate.

公开(公告)号：US11054317B2

公开(公告)日：2021-07-06

申请号：US16566409

申请日：2019-09-10

Applicant: Applied Materials, Inc.

Inventor： Charles G. Potter ,  Wendell Glenn Boyd, Jr. ,  Govinda Raj ,  Robert Hirahara

IPC: G01L1/04 ,  G01L1/16 ,  H01L21/683

Abstract: Disclosed herein is a method of measuring the chucking force of an electrostatic chuck. The method comprises placing a sensor wafer onto the electrostatic chuck, wherein the sensor wafer comprises a plurality of pressure sensors, and applying a chucking voltage to the electrostatic chuck. The method further comprises measuring the chucking force with the plurality of pressure sensors to determine a first chucking force profile of the electrostatic chuck, and processing a plurality of wafers on the electrostatic chuck. The method further comprises placing the sensor wafer onto the electrostatic chuck, and applying the chucking voltage to the electrostatic chuck. The method further comprises measuring the chucking force with the plurality of pressure sensors to determine a second chucking force profile of the electrostatic chuck.