Swizzling in 3D stacked memory
    1.
    发明授权

    公开(公告)号:US10303398B2

    公开(公告)日:2019-05-28

    申请号:US15794457

    申请日:2017-10-26

    Abstract: A processing system includes a compute die and a stacked memory stacked with the compute die. The stacked memory includes a first memory die and a second memory die stacked on top of the first memory die. A parallel access using a single memory address is directed towards different memory banks of the first memory die and the second memory die. The single memory address of the parallel access is swizzled to access the first memory die and the second memory die at different physical locations.

    Staged bitline precharge
    3.
    发明授权

    公开(公告)号:US11361819B2

    公开(公告)日:2022-06-14

    申请号:US15841649

    申请日:2017-12-14

    Abstract: A processing system reduces by staging precharging of bitlines of a memory. In a static random access memory (SRAM) array, the voltage level on every bitline in the array is precharged to a reference voltage (VDD) rail voltage before a memory access. To facilitate reduction of current spikes from precharging, a precharge control unit groups entries of a RAM into a plurality of subsets, or regions, and applies a different precharge signal for precharging bitlines associated with each subset. Application of the precharge signals to the respective subsets over time results in smaller current spikes than simultaneous application of precharge signals to all of the bitlines.

    FLEXIBILE INTERFACES USING THROUGH-SILICON VIA TECHNOLOGY

    公开(公告)号:US20190268086A1

    公开(公告)日:2019-08-29

    申请号:US15903253

    申请日:2018-02-23

    Abstract: An integrated circuit includes first and second through-silicon via (TSV) circuits and a steering logic circuit. The first TSV circuit has a first TSV and a first multiplexer for selecting between a first TSV data signal received from the first TSV and a first local data signal for transmission to a first TSV output terminal. The second TSV circuit includes a second TSV and a second multiplexer for selecting between a second TSV data signal received from the second TSV and the first local data signal for transmission to a second TSV output terminal. The steering logic circuit controls the first multiplexer to select the first local data signal and the second multiplexer to select the second TSV data signal in a first mode, and the first multiplexer to select the first TSV data signal and the second multiplexer to select the first local data signal in a second mode.

    Configuration of multi-die modules with through-silicon vias

    公开(公告)号:US10509752B2

    公开(公告)日:2019-12-17

    申请号:US15964647

    申请日:2018-04-27

    Abstract: A data processing system includes a processing unit that forms a base die and has a group of through-silicon vias (TSVs), and is connected to a memory system. The memory system includes a die stack that includes a first die and a second die. The first die has a first surface that includes a group of micro-bump landing pads and a group of TSV landing pads. The group of micro-bump landing pads are connected to the group of TSVs of the processing unit using a corresponding group of micro-bumps. The first die has a group of memory die TSVs. The subsequent die has a first surface that includes a group of micro-bump landing pads and a group of TSV landing pads connected to the group of TSVs of the first die. The first die communicates with the processing unit using first cycle timing, and with the subsequent die using second cycle timing.

    CONFIGURATION OF MULTI-DIE MODULES WITH THROUGH-SILICON VIAS

    公开(公告)号:US20190332561A1

    公开(公告)日:2019-10-31

    申请号:US15964647

    申请日:2018-04-27

    Abstract: A data processing system includes a processing unit that forms a base die and has a group of through-silicon vias (TSVs), and is connected to a memory system. The memory system includes a die stack that includes a first die and a second die. The first die has a first surface that includes a group of micro-bump landing pads and a group of TSV landing pads. The group of micro-bump landing pads are connected to the group of TSVs of the processing unit using a corresponding group of micro-bumps. The first die has a group of memory die TSVs. The subsequent die has a first surface that includes a group of micro-bump landing pads and a group of TSV landing pads connected to the group of TSVs of the first die. The first die communicates with the processing unit using first cycle timing, and with the subsequent die using second cycle timing.

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