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公开(公告)号：US12078876B1
公开(公告)日：2024-09-03
申请号：US18096716
申请日：2023-01-13
发明人： Long Chen
CPC分类号： G02F1/0147 , G02B6/29335 , G02F1/0123 , H01S3/106
摘要： Integrated wavelength selectors are described. The wavelength selector may include silicon nitride ring resonator disposed vertically between a heater and a temperature sensor. The temperature sensor may be formed of silicon in some embodiments. The wavelength selector may be coupled to the output port of a tunable laser, or may be disposed within a laser cavity.
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公开(公告)号：US20230155683A1
公开(公告)日：2023-05-18
申请号：US18094205
申请日：2023-01-06
IPC分类号： H04B10/50 , H04B10/032 , H04B10/25 , H04J14/02
CPC分类号： H04B10/50 , H04B10/032 , H04B10/25 , H04J14/0254
摘要： Aspects of the present disclosure are directed to a photonic integrated circuit (PIC) having a resistivity-engineered substrate to suppress radio-frequency (RF) common-mode signals. In some embodiments, a semiconductor substrate is provided that comprises two portions having different levels of resistivity to provide both suppression of common mode signals, and reduction of RF absorption loss for non-common mode RF signals. In such embodiments, a bottom portion of the semiconductor substrate has a low resistivity to suppress common mode via RF absorption, while a top portion of the semiconductor substrate that is adjacent to conductors in the IC has a high resistivity to reduce RF loss.
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公开(公告)号：US11411371B1
公开(公告)日：2022-08-09
申请号：US16927506
申请日：2020-07-13
发明人： Christopher Doerr , Li Chen , Long Chen
摘要： In a first embodiment, an external cavity tunable laser, comprising a silicon photonics circuit comprising one or more resonators having one or more p-i-n junctions; wherein a voltage is applied to one or more of the p-i-n junctions. In a second embodiment, a method of operating an external cavity tunable laser, comprising sweeping out free-carriers from a resonator of the tunable laser by applying a voltage to a p-i-n junction of a waveguide of the resonator.
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公开(公告)号：US20220026747A1
公开(公告)日：2022-01-27
申请号：US16937334
申请日：2020-07-23
发明人： Long Chen
IPC分类号： G02F1/025
摘要： Methods of fabricating electro-optical modulators and the resulting electro-optical modulators are described herein. In some embodiments, a method comprises defining a waveguide having a core region, implanting dopants into a contact region of the waveguide, and diffusing the dopants laterally toward the core region. In some embodiments, a method comprises implanting n-type and p-type dopants into respective first and second contact regions of the optical waveguide and annealing the optical waveguide to induce lateral diffusion of the n-type and p-type dopants toward a center of the optical waveguide. In some embodiments, an electro-optical modulator comprises a waveguide comprising a contact region and a core region, and the waveguide has a dopant concentration that decreases from the contact region to the core region according to a super-linear curve. Methods and resulting structures described herein provide desirable electrical resistance and low overlap between dopants and optical signals.
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公开(公告)号：US20190293881A1
公开(公告)日：2019-09-26
申请号：US16441775
申请日：2019-06-14
发明人： Long Chen , Christopher Doerr , Li Chen
摘要： An integrated wavelength division multiplexer is described. The integrated wavelength division multiplexer may include a first waveguide core defining a first propagation axis and configured to guide light of a first wavelength and light of a second wavelength, and a second waveguide core defining a second propagation axis and configured to guide the light of the second wavelength. A first portion of the second propagation axis for which the first waveguide core and second waveguide core may be overlapping is oriented at a non-zero angle relative to the first propagation axis. The first waveguide core and second waveguide core may be configured relative to each other to adiabatically couple the light of the second wavelength between the first and second waveguide cores.
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公开(公告)号：US10295750B2
公开(公告)日：2019-05-21
申请号：US16035563
申请日：2018-07-13
发明人： Long Chen
摘要： Techniques for forming a facet optical coupler that includes a waveguide formed over a trench of a silicon substrate are described. The trench is formed in a silicon substrate and then filled with a dielectric material. The waveguide is patterned on the dielectric material over the trench such that the waveguide is disposed a distance from the first surface. A first end of the waveguide has a first size and a second end of the waveguide distal the first end has a second size different than the first size. A material of the waveguide and the first size define a mode size of the waveguide.
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公开(公告)号：US10031292B2
公开(公告)日：2018-07-24
申请号：US14991311
申请日：2016-01-08
发明人： Long Chen
摘要： Techniques for forming a facet optical coupler that includes a waveguide formed over a trench of a silicon substrate are described. The trench is formed in a silicon substrate and then filled with a dielectric material. The waveguide is patterned on the dielectric material over the trench such that the waveguide is disposed a distance from the first surface. A first end of the waveguide has a first size and a second end of the waveguide distal the first end has a second size different than the first size. A material of the waveguide and the first size define a mode size of the waveguide.
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公开(公告)号：US09939666B2
公开(公告)日：2018-04-10
申请号：US14298859
申请日：2014-06-06
发明人： Long Chen
CPC分类号： G02F1/025 , G02B6/00 , G02B6/134 , G02F2001/0156
摘要： Disclosed are designs and methods of fabrication of silicon carrier-depletion based electro-optical modulators having doping configurations that produce modulators exhibiting desirable modulation efficiency, optical absorption loss and bandwidth characteristics. The disclosed method of fabrication of a modulator having such doping configurations utilizes counter doping to create narrow regions of relatively high doping levels near a waveguide center.
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公开(公告)号：US09477039B2
公开(公告)日：2016-10-25
申请号：US14475506
申请日：2014-09-02
发明人： Christopher Doerr , Long Chen
CPC分类号： G02B6/122 , G02B6/134 , G02B2006/12097
摘要： Disclosed are structures and methods directed to waveguide structures exhibiting improved device performance including improved attenuation of scattered light and/or transverse magnetic modes. In an illustrative embodiment according to the present disclosure, a rib waveguide structure including a rib overlying a slab waveguide (or superimposed thereon) is constructed wherein the slab waveguide is heavily doped at a distance from the rib which has a very low overlap with rib guided modes. Advantageously, such doping may be of the P-type or of the N-type, and dopants could be any of a number of known ones including—but not limited to—boron, phosphorous, etc.—or others that increase optical propagation loss. As may be appreciated, the doped regions advantageously absorb scattered light which substantially improves the structures' performance.
摘要翻译： 公开的是涉及具有改进的器件性能的波导结构的结构和方法，包括散射光和/或横向磁模式的改进的衰减。 在根据本公开的说明性实施例中，构造了包括覆盖在平板波导（或叠加在其上）上的肋的肋波导结构，其中平板波导在与肋导向的一定距离处被重掺杂，肋与肋导向 模式。 有利地，这种掺杂可以是P型或N型，并且掺杂剂可以是许多已知的掺杂物中的任何一种，包括但不限于硼，磷等，或者增加光传播损耗的其他 。 可以理解，掺杂区域有利地吸收散射光，这大大改善了结构的性能。
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公开(公告)号：US09372381B2
公开(公告)日：2016-06-21
申请号：US14057883
申请日：2013-10-18
发明人： Diedrik Vermeulen , Long Chen , Christopher Doerr
IPC分类号： G02F1/225
CPC分类号： G02F1/2257 , G02F1/225 , G02F2201/126
摘要： Disclosed herein are methods, structures, and devices that compensates for modulator loss and modulation inefficiencies introduced by mask misalignments in opposite oriented pn type junction modulators. More specifically, Mach-Zehnder type optical modulators are disclosed wherein both arms in the MZI modulator are arranged in a push-pull configuration and configured to experience pn type junctions of two orientations wherein both arms further configured to experience the same length of waveguide with a pn type junction of each orientation.
摘要翻译： 本文公开了补偿由相对定向的pn型结型调制器中的掩模未对准引入的调制器损耗和调制低效率的方法，结构和装置。 更具体地，公开了马赫 - 曾德尔型光学调制器，其中MZI调制器中的两个臂被布置成推挽配置并被配置为经历两个取向的pn型结，其中两个臂进一步配置成经历相同长度的波导 每个方向的pn型结。
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