发明申请
- 专利标题: APPARATUS AND METHOD FOR A SILICON MODULATOR WITH STRONG GRADIENT SLAB DOPING
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申请号: US16937334申请日: 2020-07-23
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公开(公告)号: US20220026747A1公开(公告)日: 2022-01-27
- 发明人: Long Chen
- 申请人: Acacia Communications, Inc.
- 申请人地址: US MA Maynard
- 专利权人: Acacia Communications, Inc.
- 当前专利权人: Acacia Communications, Inc.
- 当前专利权人地址: US MA Maynard
- 主分类号: G02F1/025
- IPC分类号: G02F1/025
摘要:
Methods of fabricating electro-optical modulators and the resulting electro-optical modulators are described herein. In some embodiments, a method comprises defining a waveguide having a core region, implanting dopants into a contact region of the waveguide, and diffusing the dopants laterally toward the core region. In some embodiments, a method comprises implanting n-type and p-type dopants into respective first and second contact regions of the optical waveguide and annealing the optical waveguide to induce lateral diffusion of the n-type and p-type dopants toward a center of the optical waveguide. In some embodiments, an electro-optical modulator comprises a waveguide comprising a contact region and a core region, and the waveguide has a dopant concentration that decreases from the contact region to the core region according to a super-linear curve. Methods and resulting structures described herein provide desirable electrical resistance and low overlap between dopants and optical signals.
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