- 专利标题: Horizontal coupling to silicon waveguides
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申请号: US14991311申请日: 2016-01-08
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公开(公告)号: US10031292B2公开(公告)日: 2018-07-24
- 发明人: Long Chen
- 申请人: Acacia Communications, Inc.
- 申请人地址: US MA Maynard
- 专利权人: Acacia Communications, Inc.
- 当前专利权人: Acacia Communications, Inc.
- 当前专利权人地址: US MA Maynard
- 代理机构: Wolf, Greenfield & Sacks, P.C.
- 主分类号: G02B6/12
- IPC分类号: G02B6/12 ; G02B6/14 ; G02B6/30 ; G02B6/122 ; G02B6/136
摘要:
Techniques for forming a facet optical coupler that includes a waveguide formed over a trench of a silicon substrate are described. The trench is formed in a silicon substrate and then filled with a dielectric material. The waveguide is patterned on the dielectric material over the trench such that the waveguide is disposed a distance from the first surface. A first end of the waveguide has a first size and a second end of the waveguide distal the first end has a second size different than the first size. A material of the waveguide and the first size define a mode size of the waveguide.
公开/授权文献
- US20160202421A1 HORIZONTAL COUPLING TO SILICON WAVEGUIDES 公开/授权日:2016-07-14
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