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公开(公告)号：US5861601A
公开(公告)日：1999-01-19
申请号：US340337
申请日：1994-11-14
申请人： Yoshiaki Sato , Mitsuru Katamoto , Hironobu Kawahara , Minoru Soraoka , Tsuyoshi Umemoto , Hideki Kihara , Katsuyoshi Kudo , Tooru Yukimasa , Hirofumi Kakutani
发明人： Yoshiaki Sato , Mitsuru Katamoto , Hironobu Kawahara , Minoru Soraoka , Tsuyoshi Umemoto , Hideki Kihara , Katsuyoshi Kudo , Tooru Yukimasa , Hirofumi Kakutani
IPC分类号： H05H1/46 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , B23K10/00
CPC分类号： H01J37/32495 , H01J37/32192 , H01J37/32229 , H01J37/32256 , H01J37/32678 , H01J37/32862
摘要： The present invention relates to a microwave plasma processing apparatus, suited for generating a plasma by using microwaves, and a processing method. Microwaves propagated through a circular waveguide are tuned in the space thereof by a microwave tuner that is installed to match the impedance, and are introduced in a uniform and most efficient state into a discharge block having a plasma-resistant inner surface that is enlarged in a tapered form through a microwave introduction window. Then, a processing gas controlled to a predetermined pressure by a gas supplying structure and gas evacuating structure is turned into a plasma which is more uniform and is more dense by interaction of a microwave electric field that is efficiently introduced and a magnetic field produced by a solenoid coil.
摘要翻译： 本发明涉及适用于通过使用微波产生等离子体的微波等离子体处理装置及其处理方法。 通过圆形波导传播的微波通过微波调谐器调谐，微波调谐器被安装成与阻抗匹配，并以均匀和最有效的状态被引入到具有等离子体的内表面的放电块中，该等离子体内表面在 锥形通过微波引入窗口。 然后，通过气体供给结构和气体排出结构控制到预定压力的处理气体变成等离子体，其通过有效引入的微波电场和由有效引入的磁场的磁场的相互作用而更均匀并且更致密 电磁线圈。
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公开(公告)号：US4911812A
公开(公告)日：1990-03-27
申请号：US258468
申请日：1988-10-17
申请人： Katsuyoshi Kudo , Yoshinao Kawasaki , Minolu Soraoka , Tsunehiko Tsubone , Kazunori Tsujimoto , Shinichi Tachi , Saadyuki Okudaira
发明人： Katsuyoshi Kudo , Yoshinao Kawasaki , Minolu Soraoka , Tsunehiko Tsubone , Kazunori Tsujimoto , Shinichi Tachi , Saadyuki Okudaira
IPC分类号： H01L21/00 , H01L21/687
CPC分类号： H01L21/67109 , H01L21/68714
摘要： The present invention relates to a plasma treating method and apparatus therefor. The plasma treating method comprises the steps of forming a treating gas into a plasma under reduced pressure, utilizing the plasma to treat a specimen cooled to a low temperature less than 0.degree. C. under reduced pressure, and maintaining at least an exposed surface to an atmosphere at which the specimen is treated except a specimen place surface of a specimen table on which the specimen is placed at a temperature above a dew point temperature of gases under the atmosphere; and a plasma treating apparatus comprises a treating chamber, means for reducing and exhausting the interior of the treating chamber, means for introducing a treating gas into the treating chamber, means for forming the treating gas into a plasma, a specimen table on which the specimen treated by utilizing the plasma is placed within the treating chamber, means for cooling the specimen table so as to be able to cool the specimen to a low temperature less than 0.degree. C., and means for maintaining at least an exposed surface within the treating chamber except a specimen place surface of the specimen table at a temperature above a dew point temperature of gases within said treating chamber, whereby even if the specimen table is cooled to a low temperature less than 0.degree. C., adsorption of the atmospheric gas to the exposed surface within the treating chamber which is at least a pressure-reduced atmosphere exposed surface except a specimen place surface of the specimen table is suppressed, and principally the occurrence of foreign matter can be prevented and the lowering of the yield of the specimen causes by the foreign matter can be prevented.
摘要翻译： 本发明涉及等离子体处理方法及其装置。 等离子体处理方法包括以下步骤：在减压下将处理气体形成到等离子体中，利用等离子体在减压下处理冷却至低于0℃的低温的样品，并将至少暴露的表面保持在 除了在大气下的气体的露点温度以上的温度下放置试样的试样台的试样的位置表面以外，对试样进行处理的气氛; 等离子体处理装置包括处理室，用于减少和排出处理室内部的装置，用于将处理气体引入处理室的装置，用于将处理气体形成为等离子体的装置，其上的样品 通过利用等离子体处理的处理室被放置在处理室内，用于冷却样品台的装置，以便能够将样品冷却至低于0℃的低温，以及用于在处理室内至少保持暴露表面的装置 除了所述处理室内的气体的露点温度以上的温度以外的试样台的试样位置表面，由此即使将试样台冷却至低于0℃的低温，也可以将气氛吸附至 处理室内的暴露表面被抑制为至少是除了样品台的试样位置表面之外的减压气氛暴露表面， 并且主要可以防止异物的发生，并且可以防止异物引起的试样的产量的降低。
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公开(公告)号：US4664767A
公开(公告)日：1987-05-12
申请号：US741526
申请日：1985-06-05
CPC分类号： H01J37/32935 , B01J19/088 , B29C59/14 , B29C2037/90
摘要： Herein disclosed are a plasma treating method and an apparatus therefor. The plasma treating method comprises: the step of monitoring the energies of plasmas corresponding to the faces of a plurality of samples to be treated; the step of adjusting to equalize the energies of said plasmas on the basis of the monitored values; and the step simultaneously treating said samples with the plasmas having said equalized energies. The plasma treating apparatus comprises: a plurality of sample electrodes disposed independently of one another in positions opposed to an opposed electrode in a treating chamber evacuated to be supplied with a treating gas; power supply means for applying and adjusting electric power to said sample electrodes; and monitor means for monitoring the energies of plasmas to be generated between said opposed electrode and said sample electrodes. The electric power to be applied independently of one another from a power supply to the independently formed plural sample electrodes are adjusted such that the energies of the plasmas to be generated between the opposed electrode and the sample electrodes are equalized, whereby the energy of the plasma corresponding to the respective treated faces of the plural samples are equalized so that the uniformity of the treatment of the respective faces of the plural samples to be simultaneously treated can be improved.
摘要翻译： 这里公开了一种等离子体处理方法及其装置。 等离子体处理方法包括：监测与待处理的多个样品的面对应的等离子体的能量的步骤; 基于所监测的值调整所述等离子体的能量的步骤; 以及用具有所述均衡能的等离子体同时处理所述样品的步骤。 等离子体处理装置包括：多个样品电极，彼此独立地设置在处理室中的与相对电极相对的位置，所述处理室被排出以供应处理气体; 用于对所述样品电极施加和调整电力的电源装置; 以及用于监测在所述相对电极和所述样品电极之间产生的等离子体能量的监视装置。 调节从电源向独立形成的多个样品电极彼此独立施加的电力，使得在相对电极和样品电极之间产生的等离子体的能量相等，由此等离子体的能量 对应于多个样品的各个处理面相对应，可以提高要同时处理的多个样品的各个面的处理的均匀性。
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公开(公告)号：US09376375B2
公开(公告)日：2016-06-28
申请号：US13636433
申请日：2011-03-23
IPC分类号： C07C249/08
CPC分类号： C07C249/08 , C07C2601/20 , C07C251/44
摘要： This invention relates to a process for producing an oxime comprising reacting a ketone and hydroxylamine in the presence of a carboxylic acid and/or its salt in a system consisting of an aqueous phase and a hydrophobic solvent phase.
摘要翻译： 本发明涉及肟的制备方法，包括在羧酸和/或其盐存在下，在由水相和疏水性溶剂相组成的体系中使酮和羟胺反应。
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公开(公告)号：US5961850A
公开(公告)日：1999-10-05
申请号：US615949
申请日：1996-03-14
CPC分类号： H01J37/32504 , H01J37/32522 , H01J2237/022
摘要： A plasma processing apparatus and method controls the temperature of those portions in the processing chamber to which reaction products or gaseous reaction products generated during plasma processing adhere, thereby minimizing the generation of foreign matter and ensuring high yields. A plasma processing gas is supplied to the plasma generation chamber 10 whose pressure is maintained at a predetermined value. Provided in the plasma generation chamber are a specimen mount 11 on which to mount an object to be processed and an evacuation mechanism 16 that evacuates the plasma generation chamber. The inner sidewall portion of the plasma generation chamber is provided with a temperature controller 34, which heats the inner side wall portion of the processing chamber above the specimen to a temperature at which reaction products sublimate, and a further temperature controller 35 is provided to cool the lower part of the specimen mount, the inner bottom portion of the processing chamber and the chamber exhaust pipe to a temperature at which the reaction products solidify.
摘要翻译： 等离子体处理装置和方法控制处理室中在等离子体处理期间产生的反应产物或气体反应产物粘附的部分的温度，从而最小化异物的产生并确保高产率。 将等离子体处理气体供给到其压力保持在预定值的等离子体产生室10。 在等离子体生成室中设置有用于安装待处理物体的样本座11和排空等离子体产生室的抽空机构16。 等离子体产生室的内侧壁部分设置有温度控制器34，该温度控制器将加热室上方的内侧壁部分加热至反应产物升华的温度，并设置另外的温度控制器35以冷却 样品座的下部，处理室的内底部和室排气管到反应产物固化的温度。
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公开(公告)号：US5085750A
公开(公告)日：1992-02-04
申请号：US338038
申请日：1989-04-14
IPC分类号： H01L21/302 , H01L21/00 , H01L21/3065 , H01L21/687
CPC分类号： H01L21/67109 , H01L21/67069 , H01L21/68714 , H01J2237/32
摘要： The present invention relates to a plasma treating method and apparatus therefor, the plasma treating method comprising the steps of supplying a liquid refrigerant whose temperature is not higher than 0.degree. C. into a specimen table having a specimen place surface, cooling a specimen placed on the specimen place surface, treating the cooled specimen utilizing a gas plasma, and recovering the liquid refrigerant, in its liquid state, retained in the specimen table from the specimen table. The plasma treating apparatus comprised means for producing a gas plasma, a specimen table on which is placed a specimen to be treated utilizing the gas plasma and interiorly formed with a space for retaining a liquid refrigerant whose temperature is not higher than 0.degree. C., means for supplying the liquid refrigerant to the space, and means for recovering the liquid refrigerant, in its liquid state, to the liquid refrirant supplying means, whereby an increase in consumption quantity of the liquid refrigerant can be suppressed, and thus an increase in operating cost of the apparatus can be suppressed.
摘要翻译： 等离子体处理方法及其设备技术领域本发明涉及等离子体处理方法及其设备，该等离子体处理方法包括以下步骤：将温度不高于0℃的液体制冷剂供给到具有样品放置表面的样品台中， 样品放置表面，利用气体等离子体处理冷却的样品，并将其液态的液体制冷剂从样品台中回收到样品台中。 等离子体处理装置包括用于产生气体等离子体的装置，将样品台放置在使用气体等离子体处理的待处理试样上，并且内部形成有用于保持温度不高于0℃的液体制冷剂的空间， 用于将液体制冷剂供给到空间的装置，以及用于将液态制冷剂液态地回收到液体冷却剂供给装置的装置，由此可以抑制液体制冷剂的消耗量的增加，从而操作增加 可以抑制装置的成本。
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公开(公告)号：US4795529A
公开(公告)日：1989-01-03
申请号：US109318
申请日：1987-10-19
IPC分类号： H05H1/02 , C23C16/517 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/306 , B05D3/06 , B44C1/22 , C23C14/00
CPC分类号： H01J37/32706 , C23C16/517 , H01L21/30655 , H01J2237/3348
摘要： This invention relates to a plasma treating method and apparatus therefor. The plasma treating method comprises rendering a gas having a critical potential plasmic under a reduced pressure and changing an acceleration voltage for accelerating ions in the plasma towards a sample interposing the critical potential. The plasma treating apparatus comprises means for rendering a gas having a critical potential plasmic under a reduced pressure and means for changing an acceleration voltage for accelerating ions in the plasma towards a sample interposing the critical potential. According to the present invention, the etching step and the film formation step can be carried out alternately and the plasma treating time can be shortened.
摘要翻译： 本发明涉及等离子体处理方法及其装置。 等离子体处理方法包括在减压下制备具有临界电位等离子体的气体，并且改变用于将等离子体中的离子加速到插入临界电位的样品的加速电压。 等离子体处理装置包括用于在减压下形成具有临界电位等离子体的气体的装置，以及用于改变用于将等离子体中的离子加速到插入临界电位的样品的加速电压的装置。 根据本发明，蚀刻步骤和成膜步骤可以交替进行，并且可以缩短等离子体处理时间。
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公开(公告)号：US20130023697A1
公开(公告)日：2013-01-24
申请号：US13636433
申请日：2011-03-23
IPC分类号： C07C249/08
CPC分类号： C07C249/08 , C07C2601/20 , C07C251/44
摘要： This invention relates to a process for producing an oxime comprising reacting a ketone and hydroxylamine in the presence of a carboxylic acid and/or its salt in a system consisting of an aqueous phase and a hydrophobic solvent phase.
摘要翻译： 本发明涉及肟的制备方法，包括在羧酸和/或其盐存在下，在由水相和疏水性溶剂相组成的体系中使酮和羟胺反应。
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公开(公告)号：US5647944A
公开(公告)日：1997-07-15
申请号：US214106
申请日：1994-03-17
申请人： Takeshi Tsubaki , Katsuya Watanabe , Hidenori Takesue , Yoshiaki Sato , Katsuyoshi Kudo , Makoto Nawata
发明人： Takeshi Tsubaki , Katsuya Watanabe , Hidenori Takesue , Yoshiaki Sato , Katsuyoshi Kudo , Makoto Nawata
CPC分类号： H01J37/32266 , H01J37/32192
摘要： The present invention improves ashing speed for a treated object and ashing speed uniformity over the treated object by improving microwave transmission efficiency and by generating uniform and strong plasma in a plasma generating chamber. According to the present invention, the microwave treatment apparatus comprises expanding wave guide tubes having an expanded room of a given size on the microwave inlet side of a microwave inlet window 9 which forms a plasma generating chamber, and a partition board with a hole having an aspect ratio other than one in the room. Therewith, a microwave resonant space is formed with interposing the partition board inside the space of the expanded wave guide tube to generate a uniform and strong electric field inside the space of the expanded wave guide tube, and then the microwave is injected into the plasma generating chamber through the microwave inlet window to generate uniform and strong plasma in the plasma generating chamber.
摘要翻译： 本发明通过提高微波传输效率和在等离子体发生室中产生均匀强烈的等离子体来改善被处理物体的灰化速度和灰化速度均匀性。 根据本发明，微波处理装置包括在构成等离子体生成室的微波入口窗口9的微波入口侧具有规定尺寸的扩张室的扩张波导管，以及具有孔的隔板 宽高比除房间外。 由此，在扩展波导管的空间内配置有分隔板而形成微波谐振空间，在扩大的波导管的空间内产生均匀且强的电场，然后将微波注入等离子体产生 室通过微波入口窗口在等离子体产生室中产生均匀和强烈的等离子体。
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公开(公告)号：US4936967A
公开(公告)日：1990-06-26
申请号：US368
申请日：1987-01-05
IPC分类号： H01J37/32
CPC分类号： H01J37/32935
摘要： The present invention relates to a method of and apparatus for detecting an end point of plasma treatment of a specimen. There is included selecting plasma spectrum having a characteristic wavelength from the plasma spectrum generating at the time of reaction in the plasma treatment of a specimen, setting a disregarding time for the plasma treatment end point detection, assuming, at the stage when the disregarding time for treatment end point detection has elapsed, a quantity of the selected plasma spectrum up to the time of said stage based on a quantity of same plasma spectrum at the time of said stage and a variation with the time in the last said quantity of plasma spectrum, and detecting the reaction time end point from the assumed quantity of plasma spectrum and an actual quantity of the same plasma spectrum after the time of said stage thereby making it possible to prevent erroneous detection of the end point of reaction in the plasma treatment and detect accurately the same even when the reaction time of the plasma treatment is short.
摘要翻译： 本发明涉及一种用于检测样品的等离子体处理终点的方法和装置。 包括从在等离子体处理终点检测中设定无视等待时间的等离子体处理终点检测时，从等离子体处理中检测到的反应时产生的等离子体光谱中选出具有特征波长的等离子体光谱，假设在不考虑时间的情况下， 处理终点检测已经过去，基于所述阶段时相同等离子体光谱的量和所述最后所述等离子体光谱中的时间的变化，所选择的等离子体谱的数量直到所述阶段的时间， 并且从所述阶段的时间之后的等离子体谱的假定量和相同等离子体光谱的实际量检测反应时间终点，从而可以防止在等离子体处理中的反应结束点的错误检测并准确检测 即使当等离子体处理的反应时间短时也是如此。
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