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    Superfine Pattern Mask, Method for Production Thereof, and Method Employing the Same for forming Superfine Pattern
    5.
    发明申请
    Superfine Pattern Mask, Method for Production Thereof, and Method Employing the Same for forming Superfine Pattern 有权
    超细纹图案面膜，其制造方法以及使用其形成超细纹图案的方法

    公开(公告)号：US20120160801A1

    公开(公告)日：2012-06-28

    申请号：US12978740

    申请日：2010-12-27

    申请人： Munirathna Padmanaban ,  Jin Li ,  Toru Koike ,  Yusuke Takano ,  Kazunori Kurosawa

    发明人： Munirathna Padmanaban ,  Jin Li ,  Toru Koike ,  Yusuke Takano ,  Kazunori Kurosawa

    IPC分类号： B05D5/02 ,  C08L83/06

    CPC分类号： C09D183/16 ,  C08G77/12 ,  C08G77/62 ,  G03F7/405 ,  H01L21/0337 ,  H01L21/0338 ,  C08L83/00

    摘要： There are provided a composition for forming a superfine pattern and a method employing the same for forming a superfine pattern. The composition enables to simply produce a superfine pattern with high mass productivity.The composition comprises perhydropolysilazane (I), silicon-containing polymer (II) having a hydrocarbon group, and a solvent. The mixture of those polymers contains silicon-hydrogen bonds and silicon-hydrocarbon group bonds in such amounts that the number of the silicon-hydrocarbon group bonds is in a ratio of 1 to 44% based on the total number of the silicon-hydrogen bonds and the silicon-hydrocarbon group bonds. The composition is applied on a resist pattern to form a spacer formed of the composition on the side wall of the ridges in the pattern, and then the spacer or a resin layer disposed around the spacer is used as a mask to form a superfine pattern.

    摘要翻译： 提供了用于形成超细纹图案的组合物和使用该组合物形成超细纹图案的方法。 该组合物能够简单地产生具有高批量生产率的超细纹理。 组合物包含全氢聚硅氮烷（I），具有烃基的含硅聚合物（II）和溶剂。 这些聚合物的混合物含有硅 - 氢键和硅 - 烃基键，其量使得硅 - 烃基键的数量相对于硅 - 氢键的总数为1〜44％， 硅烃基键合。 将该组合物施加在抗蚀剂图案上以在图案的脊的侧壁上形成由该组合物形成的间隔物，然后将间隔物或设置在间隔物周围的树脂层用作掩模以形成超细纹图案。

    Hardmask process for forming a reverse tone image using polysilazane
    7.
    发明授权
    Hardmask process for forming a reverse tone image using polysilazane 有权
    使用聚硅氮烷形成反向色调图像的硬掩模工艺

    公开(公告)号：US08084186B2

    公开(公告)日：2011-12-27

    申请号：US12368720

    申请日：2009-02-10

    申请人： David Abdallah ,  Ralph R. Dammel ,  Yusuke Takano ,  Jin Li ,  Kazunori Kurosawa

    发明人： David Abdallah ,  Ralph R. Dammel ,  Yusuke Takano ,  Jin Li ,  Kazunori Kurosawa

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/26 ,  G03F7/40

    CPC分类号： G03F7/40 ,  H01L21/02123 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/0337 ,  H01L21/31138 ,  H01L21/3125 ,  Y10T428/24802

    摘要： The present invention relates to a process for forming an reverse tone image on a device comprising; a) forming an optional absorbing organic underlayer on a substrate; b) forming a coating of a photoresist over the underlayer; c) forming a photoresist pattern; d) forming a polysilazane coating over the photoresist pattern from a polysilazane coating composition, where the polysilazane coating is thicker than the photoresist pattern, and further where the polysilazane coating composition comprises a silicon/nitrogen polymer and an organic coating solvent; e) etching the polysilazane coating to remove the polysilazane coating at least up to a level of the top of the photoresist such that the photoresist pattern is revealed; and, f) dry etching to remove the photoresist and the underlayer which is beneath the photoresist, thereby forming an opening beneath where the photoresist pattern was present.The invention further relates to a product of the above process and to a microelectronic device made from using the above process.

    摘要翻译： 本发明涉及一种在装置上形成反向色调图像的方法，包括： a）在衬底上形成可选的吸收有机底层; b）在底层上形成光致抗蚀剂的涂层; c）形成光致抗蚀剂图案; d）从聚硅氮烷涂料组合物在光致抗蚀剂图案上形成聚硅氮烷涂层，其中聚硅氮烷涂层比光致抗蚀剂图案厚，此外聚硅氮烷涂层组合物包含硅/氮聚合物和有机涂层溶剂; e）蚀刻聚硅氮烷涂层以除去聚硅氮烷涂层至少高达光致抗蚀剂顶部的水平，使得光刻胶图案显露出来; 以及f）干蚀刻以除去光致抗蚀剂下面的光致抗蚀剂和底层，从而在存在光致抗蚀剂图案的下方形成开口。 本发明还涉及上述方法的产品和使用上述方法制造的微电子器件。

    Hardmask Process for Forming a Reverse Tone Image Using Polysilazane
    8.
    发明申请
    Hardmask Process for Forming a Reverse Tone Image Using Polysilazane 有权
    使用聚硅氮烷形成反向色调图像的硬掩模工艺

    公开(公告)号：US20100203299A1

    公开(公告)日：2010-08-12

    申请号：US12368720

    申请日：2009-02-10

    申请人： David Abdallah ,  Ralph R. Dammel ,  Yusuke Takano ,  Jin Li ,  Kazunori Kurosawa

    发明人： David Abdallah ,  Ralph R. Dammel ,  Yusuke Takano ,  Jin Li ,  Kazunori Kurosawa

    IPC分类号： B32B3/10 ,  G03F7/20

    CPC分类号： G03F7/40 ,  H01L21/02123 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/0337 ,  H01L21/31138 ,  H01L21/3125 ,  Y10T428/24802

    摘要： The present invention relates to a process for forming an reverse tone image on a device comprising; a) forming an optional absorbing organic underlayer on a substrate; b) forming a coating of a photoresist over the underlayer; c) forming a photoresist pattern; d) forming a polysilazane coating over the photoresist pattern from a polysilazane coating composition, where the polysilazane coating is thicker than the photoresist pattern, and further where the polysilazane coating composition comprises a silicon/nitrogen polymer and an organic coating solvent; e) etching the polysilazane coating to remove the polysilazane coating at least up to a level of the top of the photoresist such that the photoresist pattern is revealed; and, f) dry etching to remove the photoresist and the underlayer which is beneath the photoresist, thereby forming an opening beneath where the photoresist pattern was present.The invention further relates to a product of the above process and to a microelectronic device made from using the above process.

    摘要翻译： 本发明涉及一种在装置上形成反向色调图像的方法，包括： a）在衬底上形成任选的吸收有机底层; b）在底层上形成光致抗蚀剂的涂层; c）形成光致抗蚀剂图案; d）从聚硅氮烷涂料组合物在光致抗蚀剂图案上形成聚硅氮烷涂层，其中聚硅氮烷涂层比光致抗蚀剂图案厚，此外聚硅氮烷涂层组合物包含硅/氮聚合物和有机涂层溶剂; e）蚀刻聚硅氮烷涂层以除去聚硅氮烷涂层至少高达光致抗蚀剂顶部的水平，使得光刻胶图案显露出来; 以及f）干蚀刻以除去光致抗蚀剂下面的光致抗蚀剂和底层，从而在存在光致抗蚀剂图案的下方形成开口。 本发明还涉及上述方法的产品和使用上述方法制造的微电子器件。

    Superfine pattern mask, method for production thereof, and method employing the same for forming superfine pattern
    9.
    发明授权
    Superfine pattern mask, method for production thereof, and method employing the same for forming superfine pattern 有权
    超细纹图案掩模，其制造方法，以及使用其形成超细纹图案的方法

    公开(公告)号：US08796398B2

    公开(公告)日：2014-08-05

    申请号：US12978740

    申请日：2010-12-27

    申请人： Munirathna Padmanaban ,  Jin Li ,  Toru Koike ,  Yusuke Takano ,  Kazunori Kurosawa

    发明人： Munirathna Padmanaban ,  Jin Li ,  Toru Koike ,  Yusuke Takano ,  Kazunori Kurosawa

    IPC分类号： C08L83/16

    CPC分类号： C09D183/16 ,  C08G77/12 ,  C08G77/62 ,  G03F7/405 ,  H01L21/0337 ,  H01L21/0338 ,  C08L83/00

    摘要： There are provided a composition for forming a superfine pattern and a method employing the same for forming a superfine pattern. The composition enables to simply produce a superfine pattern with high mass productivity.The composition comprises perhydropolysilazane (I), silicon-containing polymer (II) having a hydrocarbon group, and a solvent. The mixture of those polymers contains silicon-hydrogen bonds and silicon-hydrocarbon group bonds in such amounts that the number of the silicon-hydrocarbon group bonds is in a ratio of 1 to 44% based on the total number of the silicon-hydrogen bonds and the silicon-hydrocarbon group bonds. The composition is applied on a resist pattern to form a spacer formed of the composition on the side wall of the ridges in the pattern, and then the spacer or a resin layer disposed around the spacer is used as a mask to form a superfine pattern.

    摘要翻译： 提供了用于形成超细纹图案的组合物和使用该组合物形成超细纹图案的方法。 该组合物能够简单地产生具有高批量生产率的超细纹理。 组合物包含全氢聚硅氮烷（I），具有烃基的含硅聚合物（II）和溶剂。 这些聚合物的混合物含有硅 - 氢键和硅 - 烃基键，其量使得硅 - 烃基键的数量相对于硅 - 氢键的总数为1〜44％， 硅烃基键合。 将该组合物施加在抗蚀剂图案上以在图案的脊的侧壁上形成由该组合物形成的间隔物，然后将隔离物或设置在间隔物周围的树脂层用作掩模以形成超细纹图案。