Modified polysilazane film and method for producing gas barrier film
    1.
    发明授权
    Modified polysilazane film and method for producing gas barrier film 有权
    改性聚硅氮化硅膜及其制造方法

    公开(公告)号:US09512334B2

    公开(公告)日:2016-12-06

    申请号:US14126129

    申请日:2012-07-12

    摘要: Provided are a modified polysilazane film that is preferable as an intermediate material for forming a predetermined gas barrier film, and a method for producing a gas barrier film having excellent gas barrier properties using such modified polysilazane film as an intermediate material. A modified polysilazane film comprising a substrate and a modified polysilazane layer formed thereon, and a method for producing a gas barrier film obtained through such intermediate material, wherein the modified polysilazane layer has a thickness of a value in the range of 10 to 500 nm, and the modified polysilazane layer has a refractive index of a value in the range of 1.48 to 1.63.

    摘要翻译: 提供作为用于形成预定阻气膜的中间材料的改性聚硅氮烷膜,以及使用这种改性聚硅氮烷膜作为中间材料的阻气性优异的阻气膜的制造方法。 包含基材和形成在其上的改性聚硅氮烷层的改性聚硅氮烷薄膜,以及通过这种中间材料制备阻气膜的方法,其中改性聚硅氮烷层的厚度为10〜500nm, 改性聚硅氮烷层的折射率为1.48〜1.63的范围。

    Gas-barrier film, process for producing same, member for electronic device, and electronic device
    2.
    发明授权
    Gas-barrier film, process for producing same, member for electronic device, and electronic device 有权
    阻气膜,其制造方法,电子装置用构件和电子装置

    公开(公告)号:US08846200B2

    公开(公告)日:2014-09-30

    申请号:US13823688

    申请日:2011-09-16

    摘要: The present invention provides a gas barrier film including a base layer, and a gas barrier layer that is provided on at least one side of the base layer, the base layer including a resin having a glass transition temperature (Tg) of more than 130° C., the gas barrier layer being formed of a material that includes at least an oxygen atom and a silicon atom, a surface layer part of the gas barrier layer having an oxygen atom content rate of 60 to 75%, a nitrogen atom content rate of 0 to 10%, and a silicon atom content rate of 25 to 35%, based on a total content rate of oxygen atoms, nitrogen atoms, and silicon atoms, and the surface layer part of the gas barrier layer having a film density of 2.4 to 4.0 g/cm3. Also provided are a process for producing the same, an electronic device member that includes the gas barrier film, and an electronic device that includes the electronic device member. The gas barrier film of the invention exhibits an excellent gas barrier capability, excellent transparency, excellent bending resistance, and excellent heat resistance.

    摘要翻译: 本发明提供了一种阻气膜,其包括基底层和设置在基底层的至少一侧的阻气层,所述基底层包括玻璃化转变温度(Tg)大于130°的树脂 气体阻隔层由至少包含氧原子和硅原子的材料形成,阻气层的氧原子含有率为60〜75%的表层部分,氮原子含有率 为0〜10%,硅原子含有率为25〜35%,基于氧原子,氮原子和硅原子的总含有率,阻气层的表层部分的膜密度为 2.4〜4.0g / cm 3。 还提供了制造该方法的方法,包括阻气膜的电子器件部件和包括该电子器件部件的电子器件。 本发明的阻气膜表现出优异的阻气性,优异的透明性,优异的耐弯曲性和优异的耐热性。

    Control device
    5.
    发明授权

    公开(公告)号:US10712716B2

    公开(公告)日:2020-07-14

    申请号:US14768635

    申请日:2014-02-12

    IPC分类号: G05B11/42 G05B17/02 G05B11/36

    摘要: A control device according to the present invention includes a plurality of arithmetic units that operate in parallel. A sensor value of the control amount is input to the first arithmetic unit in a signal transmission sequence, and a correction amount for the manipulation amount is output from the last arithmetic unit in the signal transmission sequence. The first arithmetic unit has a controller that produces an output by processing the input sensor value, and the arithmetic units other than the first arithmetic unit has a delay element that delays an input by a predetermined number of steps and a controller that produces an output by processing the delayed input.

    Control device design method and control device

    公开(公告)号:US10180669B2

    公开(公告)日:2019-01-15

    申请号:US14768606

    申请日:2014-02-12

    IPC分类号: G05B17/02

    摘要: The present invention relates to a control device design method for a control device that determines a manipulation amount of a control object having a dead time by feedback control so as to bring a control amount of the control object closer to a target value. The method according to the present invention includes a step of designing a feedback loop that computes a correction amount for the manipulation amount using a plurality of controllers including a prediction model of the control object, a step of deriving the same number of delay elements as the plurality of controllers from a dead time element of the prediction model, and a step of allocating the plurality of controllers associated with the delay elements to a plurality of arithmetic units so that the computation of the feedback loop is performed by parallel computation by the plurality of arithmetic units that operate in parallel.

    Formed article, method of producing same, electronic device member, and electronic device
    7.
    发明授权
    Formed article, method of producing same, electronic device member, and electronic device 有权
    成形品,其制造方法,电子器件部件和电子器件

    公开(公告)号:US09365922B2

    公开(公告)日:2016-06-14

    申请号:US13321687

    申请日:2010-05-21

    摘要: A formed article comprising a gas barrier layer that is formed of a material including at least an oxygen atom, a carbon atom, and a silicon atom, the gas barrier layer including an area (A) where an oxygen atom content rate gradually decreases, and a carbon atom content rate gradually increases in a depth direction from a surface, the area (A) including a partial area (A1) and a partial area (A2), the (A1) having a specific oxygen, carbon and silicon content, and the (A2) having a specific oxygen, carbon and silicon content; a method of producing the same; an electronic device member; an electronic device. The formed article exhibits an excellent gas barrier capability, excellent bendability, excellent adhesion, and excellent surface flatness.

    摘要翻译: 包含由至少包含氧原子,碳原子和硅原子的材料形成的阻气层的成形体,所述阻气层包括氧原子含有率逐渐降低的区域(A),以及 碳原子含量率从表面的深度方向逐渐增加,包括部分区域(A1)和部分区域(A2)的区域(A),(A1)具有特定的氧,碳和硅含量,以及 (A2)具有特定的氧,碳和硅含量; 其制造方法; 电子设备构件; 电子设备。 该成型体具有优异的阻气性,优异的弯曲性,优异的粘附性和优异的表面平坦度。

    GAS-BARRIER FILM, PROCESS FOR PRODUCING SAME, MEMBER FOR ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
    8.
    发明申请
    GAS-BARRIER FILM, PROCESS FOR PRODUCING SAME, MEMBER FOR ELECTRONIC DEVICE, AND ELECTRONIC DEVICE 有权
    气体隔膜,其制造方法,电子设备用构件和电子设备

    公开(公告)号:US20130244044A1

    公开(公告)日:2013-09-19

    申请号:US13823688

    申请日:2011-09-16

    IPC分类号: C09D5/00

    摘要: The present invention provides a gas barrier film including a base layer, and a gas barrier layer that is provided on at least one side of the base layer, the base layer including a resin having a glass transition temperature (Tg) of more than 130° C., the gas barrier layer being formed of a material that includes at least an oxygen atom and a silicon atom, a surface layer part of the gas barrier layer having an oxygen atom content rate of 60 to 75%, a nitrogen atom content rate of 0 to 10%, and a silicon atom content rate of 25 to 35%, based on a total content rate of oxygen atoms, nitrogen atoms, and silicon atoms, and the surface layer part of the gas barrier layer having a film density of 2.4 to 4.0 g/cm3. Also provided are a process for producing the same, an electronic device member that includes the gas barrier film, and an electronic device that includes the electronic device member. The gas barrier film of the invention exhibits an excellent gas barrier capability, excellent transparency, excellent bending resistance, and excellent heat resistance.

    摘要翻译: 本发明提供了一种阻气膜,其包括基底层和设置在基底层的至少一侧的阻气层,所述基底层包括玻璃化转变温度(Tg)大于130°的树脂 气体阻隔层由至少包含氧原子和硅原子的材料形成,阻气层的表面层部分的氧原子含有率为60〜75%,氮原子含有率 为0〜10%,硅原子含有率为25〜35%,基于氧原子,氮原子和硅原子的总含有率,阻气层的表层部分的膜密度为 2.4〜4.0g / cm 3。 还提供了制造该方法的方法,包括阻气膜的电子器件部件和包括该电子器件部件的电子器件。 本发明的阻气膜表现出优异的阻气性,优异的透明性,优异的耐弯曲性和优异的耐热性。

    FORMED BODY, PRODUCTION METHOD THEREOF, ELECTRONIC DEVICE MEMBER AND ELECTRONIC DEVICE
    9.
    发明申请
    FORMED BODY, PRODUCTION METHOD THEREOF, ELECTRONIC DEVICE MEMBER AND ELECTRONIC DEVICE 审中-公开
    成形体,其制造方法,电子装置部件和电子装置

    公开(公告)号:US20130224503A1

    公开(公告)日:2013-08-29

    申请号:US13823636

    申请日:2011-09-20

    IPC分类号: C09D183/06 C09D183/08

    摘要: The present invention is a formed article sequentially including a base layer, a primer layer, and a gas barrier layer, the primer layer being formed of a material that includes at least a carbon atom, an oxygen atom, and a silicon atom, and is characterized in that a peak position of binding energy of 2p electrons of the silicon atom as determined by X-ray photoelectron spectroscopy (XPS) is 101.5 to 104 eV, and the gas barrier layer (I) being a layer obtained by implanting ions into a polymer layer that includes at least one compound selected from a group consisting of a polysilazane compound, a polyorganosiloxane compound, a polycarbosilane compound, and a polysilane compound, or (II) being formed of a material that includes at least an oxygen atom and a silicon atom, a surface layer part of the gas barrier layer having an oxygen atom content rate of 60 to 75%, a nitrogen atom content rate of 0 to 10%, and a silicon atom content rate of 25 to 35%, based on a total content rate of oxygen atoms, nitrogen atoms, and silicon atoms, and the surface layer part of the gas barrier layer having a film density of 2.4 to 4.0 g/cm3. Also provided are a method for forming the same, an electronic device member including the formed article, and an electronic device including the electronic device member.

    摘要翻译: 本发明是依次包括基层,底漆层和阻气层的成型体,底层由至少包含碳原子,氧原子和硅原子的材料形成,为 其特征在于,通过X射线光电子能谱(XPS)测定的硅原子的2p电子的结合能的峰值位置为101.5〜104eV,阻气层(I)为通过将离子注入到 包含至少一种选自聚硅氮烷化合物,聚有机硅氧烷化合物,聚碳硅烷化合物和聚硅烷化合物的化合物的聚合物层,或(II)由至少包含氧原子和硅的材料形成 原子,氧原子含有率为60〜75%,氮原子含有率为0〜10%,硅原子含有率为25〜35%的阻气层的表层部, 牛的含量 原子,氮原子和硅原子,阻气层的表层部分的膜密度为2.4〜4.0g / cm 3。 还提供了其形成方法,包括成型制品的电子装置构件和包括该电子装置构件的电子装置。

    FORMED ARTICLE, METHOD FOR PRODUCING THE SAME, ELECTRONIC DEVICE MEMBER, AND ELECTRONIC DEVICE
    10.
    发明申请
    FORMED ARTICLE, METHOD FOR PRODUCING THE SAME, ELECTRONIC DEVICE MEMBER, AND ELECTRONIC DEVICE 审中-公开
    成形品,其制造方法,电子设备部件和电子设备

    公开(公告)号:US20130058024A1

    公开(公告)日:2013-03-07

    申请号:US13634410

    申请日:2011-03-28

    摘要: Provided is a formed article comprising at least a gas barrier layer, the gas barrier layer being formed of a material that includes silicon atoms, oxygen atoms, and carbon atoms, a carbon atom content, a silicon atom content, and an oxygen atom content in a surface layer part of the gas barrier layer determined by XPS elemental analysis being 10.0 to 28.0%, 18.0 to 28.0%, and 48.0 to 66.0%, respectively, based on a total content (=100 atom %) of silicon atoms, oxygen atoms, and carbon atoms, and the formed article having a water vapor transmission rate at a temperature of 40° C. and a relative humidity of 90% of 5.3 g/m2/day or less, and a total light transmittance at a wavelength of 550 nm of 90% or more. Also provided are a method for producing the formed article, an electronic device member including the formed article, and an electronic device including the electronic device member. The formed article exhibiting an excellent gas barrier capability, excellent flexibility, and excellent transparency, a method for producing the same, and an electronic device member, or the like, comprising the formed article are provided.

    摘要翻译: 本发明提供一种成形体,其至少包含阻气层,所述气体阻隔层由包含硅原子,氧原子和碳原子,碳原子含量,硅原子含量和氧原子含量的材料形成 基于硅原子的总含量(= 100原子%),氧原子,通过XPS元素分析确定的阻气层的表层部分分别为10.0〜28.0%,18.0〜28.0%,48.0〜66.0% 和碳原子,并且在40℃的温度和90%的相对湿度为5.3g / m 2 /天以下的水蒸汽透过率和波长550的总透光率的成形体 nm为90%以上。 还提供了一种用于生产成型物品的方法,包括成形物品的电子设备构件和包括该电子设备构件的电子设备。 提供了具有优异的气体阻隔能力,优异的柔性和优异的透明性的成型体,其制造方法以及包含该成型体的电子器件部件等。