发明申请
US20130224503A1 FORMED BODY, PRODUCTION METHOD THEREOF, ELECTRONIC DEVICE MEMBER AND ELECTRONIC DEVICE
审中-公开
成形体,其制造方法,电子装置部件和电子装置
- 专利标题: FORMED BODY, PRODUCTION METHOD THEREOF, ELECTRONIC DEVICE MEMBER AND ELECTRONIC DEVICE
- 专利标题(中): 成形体,其制造方法,电子装置部件和电子装置
-
申请号: US13823636申请日: 2011-09-20
-
公开(公告)号: US20130224503A1公开(公告)日: 2013-08-29
- 发明人: Yuta Suzuki , Takeshi Kondo
- 申请人: Yuta Suzuki , Takeshi Kondo
- 申请人地址: JP Tokyo
- 专利权人: LINTEC CORPORATION
- 当前专利权人: LINTEC CORPORATION
- 当前专利权人地址: JP Tokyo
- 优先权: JP2010-210658 20100921; JP2010-211129 20100921
- 国际申请: PCT/JP2011/071353 WO 20110920
- 主分类号: C09D183/06
- IPC分类号: C09D183/06 ; C09D183/08
摘要:
The present invention is a formed article sequentially including a base layer, a primer layer, and a gas barrier layer, the primer layer being formed of a material that includes at least a carbon atom, an oxygen atom, and a silicon atom, and is characterized in that a peak position of binding energy of 2p electrons of the silicon atom as determined by X-ray photoelectron spectroscopy (XPS) is 101.5 to 104 eV, and the gas barrier layer (I) being a layer obtained by implanting ions into a polymer layer that includes at least one compound selected from a group consisting of a polysilazane compound, a polyorganosiloxane compound, a polycarbosilane compound, and a polysilane compound, or (II) being formed of a material that includes at least an oxygen atom and a silicon atom, a surface layer part of the gas barrier layer having an oxygen atom content rate of 60 to 75%, a nitrogen atom content rate of 0 to 10%, and a silicon atom content rate of 25 to 35%, based on a total content rate of oxygen atoms, nitrogen atoms, and silicon atoms, and the surface layer part of the gas barrier layer having a film density of 2.4 to 4.0 g/cm3. Also provided are a method for forming the same, an electronic device member including the formed article, and an electronic device including the electronic device member.
信息查询
IPC分类: