公开(公告)号：US20060058894A1

公开(公告)日：2006-03-16

申请号：US10939863

申请日：2004-09-13

Applicant: Te-Hsiang Liu ,  Yu-Wen Fang ,  Chao-Ying Chiu

Inventor： Te-Hsiang Liu ,  Yu-Wen Fang ,  Chao-Ying Chiu

IPC: G05B11/01

CPC classification number: G05B19/409 ,  G05B2219/34224 ,  G05B2219/36159

Abstract: Provided are a device and method for a programmable hand-held device for use in a semiconductor manufacturing environment. In one example, the device includes an interface, a processor, an input device, and a memory. The interface may establish a connection between the device and at least one of the process tools. The processor may process executable instructions. The input device may receive input instructions for programming a specific type of tool. The memory contains the executable instructions, which may be divided into multiple subsets of instructions, where each subset is adapted for communication with a specific type of tool. The instructions may include identifying the specific type of tool referenced by the input instructions, selecting the subset of instructions adapted for communication with the selected specific type of tool, and programming the selected specific type of tool via the interface using the subset of instructions and the input instructions.

Abstract translation: 提供了一种用于在半导体制造环境中使用的可编程手持装置的装置和方法。 在一个示例中，设备包括接口，处理器，输入设备和存储器。 接口可以建立设备与至少一个处理工具之间的连接。 处理器可以处理可执行指令。 输入设备可以接收用于编程特定类型的工具的输入指令。 存储器包含可执行指令，其可以被分成多个指令子集，其中每个子集适于与特定类型的工具通信。 指令可以包括识别由输入指令引用的工具的具体类型，选择适于与所选择的特定类型的工具进行通信的指令子集，以及经由该接口使用指令子集对所选择的特定类型的工具进行编程，并且 输入指令。

公开(公告)号：US07286896B2

公开(公告)日：2007-10-23

申请号：US10939863

申请日：2004-09-13

Applicant: Te-Hsiang Liu ,  Yu-Wen Fang ,  Chao-Ying Chiu

Inventor： Te-Hsiang Liu ,  Yu-Wen Fang ,  Chao-Ying Chiu

IPC: G06F19/00

CPC classification number: G05B19/409 ,  G05B2219/34224 ,  G05B2219/36159

Abstract: Provided are a device and method for a programmable hand-held device for use in a semiconductor manufacturing environment. In one example, the device includes an interface, a processor, an input device, and a memory. The interface may establish a connection between the device and at least one of the process tools. The processor may process executable instructions. The input device may receive input instructions for programming a specific type of tool. The memory contains the executable instructions, which may be divided into multiple subsets of instructions, where each subset is adapted for communication with a specific type of tool. The instructions may include identifying the specific type of tool referenced by the input instructions, selecting the subset of instructions adapted for communication with the selected specific type of tool, and programming the selected specific type of tool via the interface using the subset of instructions and the input instructions.

Abstract translation: 提供了一种用于在半导体制造环境中使用的可编程手持装置的装置和方法。 在一个示例中，设备包括接口，处理器，输入设备和存储器。 接口可以建立设备与至少一个处理工具之间的连接。 处理器可以处理可执行指令。 输入设备可以接收用于编程特定类型的工具的输入指令。 存储器包含可执行指令，其可以被分成多个指令子集，其中每个子集适于与特定类型的工具通信。 指令可以包括识别由输入指令引用的工具的具体类型，选择适于与所选择的特定类型的工具进行通信的指令子集，以及经由该接口使用指令子集对所选择的特定类型的工具进行编程，并且 输入指令。

公开(公告)号：US06927076B2

公开(公告)日：2005-08-09

申请号：US10264517

申请日：2002-10-05

Applicant: Shi-Rong Chen ,  Yu-Wen Fang ,  Ching-Shan Lu

Inventor： Shi-Rong Chen ,  Yu-Wen Fang ,  Ching-Shan Lu

IPC: H01L21/00 ,  H01L21/302 ,  H01L21/3605

CPC classification number: H01L21/67276 ,  H01J37/32935 ,  H01L21/67253

Abstract: A method for automated monitoring and controlling of a semiconductor wafer plasma process including performing a plasma process in a plasma processing system to treat a semiconductor process wafer according to a first plasma process recipe; collecting plasma process parameters including at least an RF power and a plasma process time at pre-determined time intervals; and, storing the plasma process parameters including pre-process plasma processing system parameters according to a selectively queryable database to create a plasma process history such that upon abortion of the plasma process the plasma process history may be selectively retrieved to determine a second plasma process recipe to complete the plasma process.

Abstract translation: 一种用于半导体晶片等离子体处理的自动监测和控制的方法，包括在等离子体处理系统中执行等离子体处理以根据第一等离子体处理配方处理半导体工艺晶片; 以预定的时间间隔收集包括至少RF功率和等离子体处理时间的等离子体处理参数; 以及根据选择性可查询的数据库存储等离子体处理参数，包括预处理等离子体处理系统参数以产生等离子体处理历史，使得在等离子体处理流产时，可选择性地检索等离子体处理历史以确定第二等离子体处理配方 完成等离子体工艺。

公开(公告)号：US20050198847A1

公开(公告)日：2005-09-15

申请号：US10800555

申请日：2004-03-15

Applicant: Te-Hsiang Liu ,  Yu-Wen Fang ,  Jay Lin ,  Ming-Shuo Yen

Inventor： Te-Hsiang Liu ,  Yu-Wen Fang ,  Jay Lin ,  Ming-Shuo Yen

IPC: G01B5/25 ,  H01L21/66

CPC classification number: G01B5/14 ,  G01B5/0004 ,  G01B5/25 ,  H01L21/67259

Abstract: A parallel ruler comprises a frame, and a plurality of gauges disposed in a flat portion of the frame. The gauges have compressible parts protruding downward beyond a lower surface of the frame for measuring a distance to a plane.

Abstract translation: 平行尺包括框架和设置在框架的平坦部分中的多个量规。 量规具有向下突出超过框架的下表面的可压缩部分，用于测量与平面的距离。

公开(公告)号：US06861104B2

公开(公告)日：2005-03-01

申请号：US10063896

申请日：2002-05-22

Applicant: Hsin-Chang Wu ,  Cheng-Yuan Tsai ,  Yu-Wen Fang ,  Neng-Hui Yang

Inventor： Hsin-Chang Wu ,  Cheng-Yuan Tsai ,  Yu-Wen Fang ,  Neng-Hui Yang

IPC: H01L21/308 ,  H01L21/316 ,  B05D3/06 ,  C23C14/10 ,  C23C14/14 ,  H01L21/306 ,  H01L21/473 ,  H05H1/46

CPC classification number: H01L21/02129 ,  H01L21/02315 ,  H01L21/3081 ,  H01L21/31625

Abstract: A method of enhancing adhesion strength of a boro-silicate glass (BSG) film to a silicon nitride film is provided. A semiconductor substrate with a silicon nitride film formed thereon is provided. The silicon nitride film is then exposed to oxygen-containing plasma such as ozone plasma. A thick BSG film is then deposited onto the treated surface of the silicon nitride film. By pre-treating the silicon nitride film with ozone plasma for about 60 seconds, an increase of near 50% of Kapp of the BSG film is obtained.

Abstract translation: 提供了一种提高硼硅酸盐玻璃（BSG）膜对氮化硅膜的粘附强度的方法。 提供其上形成有氮化硅膜的半导体衬底。 然后将氮化硅膜暴露于含氧等离子体如臭氧等离子体。 然后将厚的BSG膜沉积在氮化硅膜的处理表面上。 通过用臭氧等离子体预处理氮化硅膜约60秒，可获得BSG膜的Kapp近50％的增加。