Pulse Width Modulation Driving IC and Pulse Width Modulation Output Signal Generating Method
    1.
    发明申请
    Pulse Width Modulation Driving IC and Pulse Width Modulation Output Signal Generating Method 有权
    脉宽调制驱动IC和脉宽调制输出信号产生方法

    公开(公告)号:US20120274411A1

    公开(公告)日:2012-11-01

    申请号:US13172816

    申请日:2011-06-29

    CPC classification number: H03K7/08

    Abstract: The present invention discloses a pulse width modulation driving IC. The pulse width modulation driving IC includes a first pin, for receiving a first signal, a second pin, for receiving a second signal, a comparing unit, for comparing the first signal with a reference voltage, to generate a comparison result indicating a operating mode of the pulse width modulation driving IC, and an output unit, for outputting a pulse width modulation output signal according to the first signal, the second signal and the comparison result.

    Abstract translation: 本发明公开了一种脉宽调制驱动IC。 脉宽调制驱动IC包括用于接收第一信号的第一引脚,用于接收第二信号的第二引脚,用于将第一信号与参考电压进行比较的比较单元,以产生指示操作模式的比较结果 以及输出单元,用于根据第一信号,第二信号和比较结果输出脉宽调制输出信号。

    Metrology for monitoring a rapid thermal annealing process
    3.
    发明授权
    Metrology for monitoring a rapid thermal annealing process 失效
    用于监测快速热退火过程的计量

    公开(公告)号:US06777251B2

    公开(公告)日:2004-08-17

    申请号:US10175702

    申请日:2002-06-20

    CPC classification number: H01L21/67253 H01L21/67098 H01L22/20

    Abstract: A method including operating an ion implanted to implanting ions in a semiconductor wafer at a first ion dose level; performing a first thermal wave measurement to obtain the first thermal wave value; placing the semiconductor wafer in a rapid thermal annealing furnace and operating the furnace to rapidly heat the semiconductor wafer at a first rate for a first time period and so that the wafer is heated with intent of achieving a wafer temperature of 500° C.; performing a second thermal wave measurement to obtain a second thermal wave value; comparing the difference between the first thermal wave value and the second thermal wave value to a target range of 376.5-382.5 and rejecting the wafer as being outside of an acceptable specification if the difference is outside of the target range.

    Abstract translation: 一种方法,包括操作注入的离子以在第一离子剂量水平下在半导体晶片中注入离子; 执行第一热波测量以获得第一热波值; 将半导体晶片放置在快速热退火炉中并操作炉子以第一速率第一时间段快速加热半导体晶片,并且旨在实现晶片温度为500℃的晶片被加热; 执行第二热波测量以获得第二热波值; 将第一热波值和第二热波值之间的差值与376.5-382.5的目标范围进行比较,并且如果差异在目标范围之外,则拒绝晶片超出可接受规范。

    RTA chamber with in situ reflective index monitor
    4.
    发明授权
    RTA chamber with in situ reflective index monitor 失效
    RTA室与原位反射指数监视器

    公开(公告)号:US06740196B2

    公开(公告)日:2004-05-25

    申请号:US10081481

    申请日:2002-02-21

    Abstract: A rapid thermal anneal (RTA) chamber having one or multiple openings in a chamber wall and a reflective index monitor in the opening or openings, respectively. The reflective index monitor or monitors each measures the infrared reflective index of the reflector plate of the rapid thermal anneal chamber, and sends a corresponding signal to a process controller, an alarm, or both a process controller and an alarm. In the event that the measured reflective index of the reflector plate deviates from the reflective index of a control, the process controller terminates heating operation of the chamber to prevent damage to the semiconductor wafer in the chamber. The alarm may be activated to alert personnel to the need for immediate replacement of the contaminated reflector plate.

    Abstract translation: 快速热退火(RTA)室在室壁中具有一个或多个开口,并且在开口或开口中分别具有反射指数监测器。 反射指数监视器或监视器各自测量快速热退火室的反射板的红外反射指数,并将相应的信号发送到过程控制器,报警器或过程控制器和报警器。 在反射板的测量反射指数偏离控制器的反射指数的情况下,过程控制器终止腔室的加热操作,以防止对腔室中的半导体晶片的损坏。 可能会启动警报,提醒人员需要立即更换污染的反射板。

    Treadmill
    5.
    发明申请
    Treadmill 审中-公开
    跑步机

    公开(公告)号:US20070202996A1

    公开(公告)日:2007-08-30

    申请号:US11362876

    申请日:2006-02-28

    CPC classification number: A63B22/0056 A63B21/0087 A63B2022/0053

    Abstract: A treadmill including: a base seat, a first bracket and a second bracket being respectively pivotally mounted on each of two lateral sides of a front section of the base seat, a damper being disposed between a middle section of each second bracket and a rear end of the base seat; and two tread boards, top ends of the first brackets being respectively pivotally connected under front ends of the tread boards, top ends of the second brackets being respectively pivotally connected under middle sections of the tread boards. When treading the tread boards of the treadmill, a forward travel is achieved. Therefore, a user can use the treadmill just like the user naturally steps forward.

    Abstract translation: 一种跑步机,包括:基座,第一支架和第二支架,其分别枢转地安装在所述基座的前部的两个侧面的每一侧上,阻尼器设置在每个第二支架的中间部分之间, 的基座; 和两个踏板,第一托架的顶端分别枢转地连接在踏板的前端,第二托架的顶端分别枢转地连接在踏板的中间部分。 当踏上跑步机的踏板时,实现向前行进。 因此,用户可以像使用者自然向前走一样使用跑步机。

    Method for high temperature oxidations to prevent oxide edge peeling
    6.
    发明授权
    Method for high temperature oxidations to prevent oxide edge peeling 有权
    高温氧化防止氧化皮边缘剥落的方法

    公开(公告)号:US06642128B1

    公开(公告)日:2003-11-04

    申请号:US10140396

    申请日:2002-05-06

    CPC classification number: H01L21/76224

    Abstract: A method for preventing oxide layer peeling in a high temperature annealing process including providing a plurality of spaced apart stacked semiconductor wafers for carrying out a high temperature annealing process including ambient nitrogen gas the plurality of spaced apart stacked semiconductor wafers stacked such that a process surface including an oxide layer of at least one semiconductor wafer is adjacent to a backside surface of another semiconductor wafer said backside surface having a layer of silicon nitride formed thereon prior to carrying out the high temperature annealing process; and, carrying out the high temperature annealing process.

    Abstract translation: 一种用于防止在高温退火过程中氧化层剥离的方法,包括提供多个间隔堆叠的半导体晶片,用于执行包括环境氮气的高温退火工艺,所述多个间隔堆叠的半导体晶片被堆叠,使得处理表面包括 在进行高温退火处理之前,至少一个半导体晶片的氧化物层与另一半导体晶片的背面相邻,所述背面具有形成在其上的氮化硅层; 并进行高温退火处理。

    Method for calibrating alignment mark positions on substrates
    8.
    发明授权
    Method for calibrating alignment mark positions on substrates 有权
    用于校准衬底上的对准标记位置的方法

    公开(公告)号:US07089677B2

    公开(公告)日:2006-08-15

    申请号:US10840093

    申请日:2004-05-05

    CPC classification number: H01L21/68 Y10S414/136

    Abstract: A novel method for determining whether substrates are correctly positioned on a substrate support in a semiconductor substrate processing or measuring tool for optimum processing or measuring of the substrates. The method includes providing a control substrate; providing alignment marks on the substrate; determining a homing position for the alignment marks on the control substrate wherein the position of the control substrate corresponds to a homing position for optimum processing or measuring of actual substrates; periodically testing the position of the control substrate on the substrate support as facilitated by the substrate transfer and/or substrate positioning equipment of the tool; and determining whether the position of the alignment marks on the control substrate, with respect to the substrate support, stray outside an accepted deviation range.

    Abstract translation: 一种用于确定衬底是否正确定位在用于最佳处理或测量衬底的半导体衬底处理或测量工具中的衬底支撑件上的新方法。 该方法包括提供控制基板; 在基板上提供对准标记; 确定所述控制基板上的对准标记的归位位置,其中所述控制基板的位置对应于用于最佳处理或测量实际基板的归位位置; 在工具的基板转移和/或基板定位设备促成的情况下周期性地测试控制基板在基板支撑件上的位置; 并且确定对照基板上的对准标记相对于基板支撑件的位置是否偏离接受的偏差范围。

    Method for calibrating alignment mark positions on substrates
    9.
    发明申请
    Method for calibrating alignment mark positions on substrates 有权
    用于校准衬底上的对准标记位置的方法

    公开(公告)号:US20050246915A1

    公开(公告)日:2005-11-10

    申请号:US10840093

    申请日:2004-05-05

    CPC classification number: H01L21/68 Y10S414/136

    Abstract: A novel method for determining whether substrates are correctly positioned on a substrate support in a semiconductor substrate processing or measuring tool for optimum processing or measuring of the substrates. The method includes providing a control substrate; providing alignment marks on the substrate; determining a homing position for the alignment marks on the control substrate wherein the position of the control substrate corresponds to a homing position for optimum processing or measuring of actual substrates; periodically testing the position of the control substrate on the substrate support as facilitated by the substrate transfer and/or substrate positioning equipment of the tool; and determining whether the position of the alignment marks on the control substrate, with respect to the substrate support, stray outside an accepted deviation range.

    Abstract translation: 一种用于确定衬底是否正确定位在用于最佳处理或测量衬底的半导体衬底处理或测量工具中的衬底支撑件上的新方法。 该方法包括提供控制基板; 在基板上提供对准标记; 确定所述控制基板上的对准标记的归位位置,其中所述控制基板的位置对应于用于最佳处理或测量实际基板的归位位置; 在工具的基板转移和/或基板定位设备促成的情况下周期性地测试控制基板在基板支撑件上的位置; 并且确定对照基板上的对准标记相对于基板支撑件的位置是否偏离接受的偏差范围。

    Multiple discharge-servo curve control method and device for an electrical discharge machine
    10.
    发明授权
    Multiple discharge-servo curve control method and device for an electrical discharge machine 失效
    多放电伺服曲线控制方法及放电装置

    公开(公告)号:US06941187B2

    公开(公告)日:2005-09-06

    申请号:US09987302

    申请日:2001-11-14

    CPC classification number: B23H1/02 G05B19/18 G05B2219/41206 G05B2219/45221

    Abstract: A discharge-servo curve control method and device for an electrical discharge machine enables multiple discharge-servo curves to be chosen during a machining process in real-time. The control device includes a storage unit, a setting unit, a reading unit, a program unit and an instruction-judging unit capable of swapping control during execution of the program whenever a discharge-servo curve instruction is encountered.

    Abstract translation: 放电伺服曲线控制方法和放电机的装置能够在加工过程中实时选择多个放电伺服曲线。 控制装置包括存储单元,设置单元,读取单元,程序单元和指令判断单元,每当遇到放电伺服曲线指令时,能够在执行程序期间进行交换控制。

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