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    PLASMA PROCESSING APPARATUS AND METHOD FOR PLASMA PROCESSING
    1.
    发明申请
    PLASMA PROCESSING APPARATUS AND METHOD FOR PLASMA PROCESSING 有权
    等离子体处理装置和等离子体处理方法

    公开(公告)号：US20110024399A1

    公开(公告)日：2011-02-03

    申请号：US12936671

    申请日：2009-04-06

    申请人： Hyoung Won Kim ,  Young Soo Seo ,  Chi Kug Yoon ,  Jun Hyeok Lee ,  Young Ki Han ,  Jae Chul Choi

    发明人： Hyoung Won Kim ,  Young Soo Seo ,  Chi Kug Yoon ,  Jun Hyeok Lee ,  Young Ki Han ,  Jae Chul Choi

    IPC分类号： B23K10/00

    CPC分类号： H01J37/32568 ,  H01J37/32009 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67751 ,  H01L21/68742

    摘要： Provided are a plasma processing apparatus and method. The plasma processing apparatus includes a chamber, an upper electrode, a lower electrode, a substrate support, and a movement member. The upper electrode is disposed at an inner upper portion of the chamber. The lower electrode faces the upper electrode at an inner lower portion of the chamber to support a substrate such that a bevel of the substrate is exposed in a substrate level etching process. The substrate support is disposed between the upper electrode and the lower electrode to support the substrate such that a central region of a bottom surface of the substrate is exposed in a substrate backside etching process. The movement member is configured to move the substrate support to separate the substrate from the substrate support in the substrate backside etching process.

    摘要翻译： 提供了一种等离子体处理装置和方法。 等离子体处理装置包括室，上电极，下电极，基板支撑件和移动构件。 上电极设置在室的内部上部。 下电极在室的内下部面对上电极以支撑衬底，使得衬底的斜面在衬底级蚀刻工艺中暴露。 衬底支撑件设置在上电极和下电极之间以支撑衬底，使得衬底的底表面的中心区域在衬底背面蚀刻工艺中暴露。 移动构件被构造成移动衬底支撑件以在衬底背面蚀刻工艺中将衬底与衬底支撑件分离。

    Plasma display panel
    2.
    发明申请
    Plasma display panel 审中-公开
    等离子显示面板

    公开(公告)号：US20080218080A1

    公开(公告)日：2008-09-11

    申请号：US11901026

    申请日：2007-09-14

    申请人： Jung-Suk Song ,  Ki-Dong Kim ,  Sang-Hyun Kim ,  Bo-Won Lee ,  Seong-Hun Choo ,  Joon-Hyeong Kim ,  Young-Soo Seo

    发明人： Jung-Suk Song ,  Ki-Dong Kim ,  Sang-Hyun Kim ,  Bo-Won Lee ,  Seong-Hun Choo ,  Joon-Hyeong Kim ,  Young-Soo Seo

    IPC分类号： H01J17/49

    CPC分类号： H01J11/12 ,  H01J11/34

    摘要： Provided is a plasma display panel including: a first substrate and a second substrate facing each other; an upper dielectric layer formed on the inner surface of the first substrate; and a first ceramic layer which has about the same thermal expansion coefficient as the upper dielectric layer, faces the upper dielectric layer, and is formed on the outer surface of the first substrate. Alternatively, the plasma display panel includes: a first lower dielectric layer formed on the second substrate and having a thermal expansion coefficient greater than that of the second substrate by α; and a second lower dielectric layer formed on the first lower dielectric layer and having a thermal expansion coefficient less than that of the second substrate by α.

    摘要翻译： 提供一种等离子体显示面板，其包括：第一基板和第二基板，彼此面对; 形成在所述第一基板的内表面上的上电介质层; 并且具有与上部电介质层大致相同的热膨胀系数的第一陶瓷层面向上部电介质层，并且形成在第一基板的外表面上。 或者，等离子体显示面板包括：形成在第二基板上并且具有比第二基板的热膨胀系数大的热膨胀系数的第一下介电层; 以及第二下介电层，其形成在所述第一下电介质层上，并且具有比所述第二基板的热膨胀系数小的热膨胀系数。

    PLASMA DISPLAY DEVICE
    3.
    发明申请
    PLASMA DISPLAY DEVICE 审中-公开
    等离子体显示设备

    公开(公告)号：US20080186419A1

    公开(公告)日：2008-08-07

    申请号：US11836049

    申请日：2007-08-08

    申请人： Dong Hyun Kim ,  Young Soo Seo ,  Jung Suk Song ,  Jun Tae Kim ,  Jeong Min Choi

    发明人： Dong Hyun Kim ,  Young Soo Seo ,  Jung Suk Song ,  Jun Tae Kim ,  Jeong Min Choi

    IPC分类号： G02F1/133 ,  H01J9/00

    CPC分类号： H05K7/20963

    摘要： A plasma display device is provided having a plasma display panel, a chassis base arranged substantially parallel to the plasma display panel, a tape bonding the plasma display panel to the chassis base, and a radiative sheet interposed between and adhering to the plasma display panel and the chassis base. The radiative sheet is of material having a layered crystal structure. The layered crystal structure is arranged to extend at an angle from the plasma display panel. The angle is not horizontal/parallel to a surface of the plasma display panel.

    摘要翻译： 提供了一种等离子体显示装置，其具有等离子体显示面板，基本上平行于等离子体显示面板布置的底座基座，将等离子体显示面板粘合到底架上的带子，以及插入在等离子体显示面板之间并粘附到等离子体显示面板上的辐射片 底盘。 辐射片是具有层状晶体结构的材料。 层状晶体结构被布置成从等离子体显示面板以一定角度延伸。 该角度不是水平/平行于等离子体显示面板的表面。

    Apparatus and method for processing substrate
    6.
    发明授权
    Apparatus and method for processing substrate 有权
    基板处理装置及方法

    公开(公告)号：US08864936B2

    公开(公告)日：2014-10-21

    申请号：US12810915

    申请日：2008-12-10

    申请人： Young Ki Han ,  Young Soo Seo

    发明人： Young Ki Han ,  Young Soo Seo

    IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00 ,  H01J37/20 ,  H01J37/32

    CPC分类号： H01J37/20 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/2002 ,  H01J2237/20235

    摘要： There are provided an apparatus and method for processing a substrate. By using the apparatus and method, plasma processing can be individually performed on each of edge and rear regions of a substrate in a single chamber. The apparatus includes a chamber providing a reaction space; a stage installed in the chamber; a plasma shielding unit installed opposite to the stage in the chamber; a support unit for supporting a substrate between the stage and the plasma shielding unit; a first supply pipe provided at the stage to supply a reaction or non-reaction gas to one surface of the substrate; and second and third supply pipes provided at the plasma shielding unit, the second supply pipe supplying a reaction gas to the other surface of the substrate, the third supply pipe supplying a non-reaction gas to the other surface.

    摘要翻译： 提供了一种用于处理基板的装置和方法。 通过使用该装置和方法，可以在单个室中对基板的边缘区域和后部区域各自进行等离子体处理。 该装置包括提供反应空间的室; 安装在室内的舞台; 等离子体屏蔽单元，其安装在所述室中与所述台相对; 支撑单元，用于在所述载物台和所述等离子体屏蔽单元之间支撑基板; 设置在所述阶段以将反应或非反应气体供应到所述基板的一个表面的第一供给管; 以及设置在所述等离子体屏蔽单元处的第二和第三供应管，所述第二供应管向所述基板的另一表面供应反应气体，所述第三供应管向另一表面供应非反应气体。

    Plasma processing apparatus and method for plasma processing
    8.
    发明授权
    Plasma processing apparatus and method for plasma processing 有权
    等离子体处理装置和等离子体处理方法

    公开(公告)号：US08373086B2

    公开(公告)日：2013-02-12

    申请号：US12936671

    申请日：2009-04-06

    申请人： Hyoung Won Kim ,  Young Soo Seo ,  Chi Kug Yoon ,  Jun Hyeok Lee ,  Young Ki Han ,  Jae Chul Choi

    发明人： Hyoung Won Kim ,  Young Soo Seo ,  Chi Kug Yoon ,  Jun Hyeok Lee ,  Young Ki Han ,  Jae Chul Choi

    IPC分类号： B23K10/00

    CPC分类号： H01J37/32568 ,  H01J37/32009 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67751 ,  H01L21/68742

    摘要： Provided are a plasma processing apparatus and method. The plasma processing apparatus includes a chamber, an upper electrode, a lower electrode, a substrate support, and a movement member. The upper electrode is disposed at an inner upper portion of the chamber. The lower electrode faces the upper electrode at an inner lower portion of the chamber to support a substrate such that a bevel of the substrate is exposed in a substrate level etching process. The substrate support is disposed between the upper electrode and the lower electrode to support the substrate such that a central region of a bottom surface of the substrate is exposed in a substrate backside etching process. The movement member is configured to move the substrate support to separate the substrate from the substrate support in the substrate backside etching process.

    摘要翻译： 提供了一种等离子体处理装置和方法。 等离子体处理装置包括室，上电极，下电极，基板支撑件和移动构件。 上电极设置在室的内部上部。 下电极在室的内下部面对上电极以支撑衬底，使得衬底的斜面在衬底级蚀刻工艺中暴露。 衬底支撑件设置在上电极和下电极之间以支撑衬底，使得衬底的底表面的中心区域在衬底背面蚀刻工艺中暴露。 移动构件被构造成移动衬底支撑件以在衬底背面蚀刻工艺中将衬底与衬底支撑件分离。