Method of constructing surface element layers of hexahedral mesh for finite element analysis and method of constructing hexahedral mesh using the same
    1.
    发明授权
    Method of constructing surface element layers of hexahedral mesh for finite element analysis and method of constructing hexahedral mesh using the same 失效
    用于有限元分析的六面体网格表面元素层的构建方法及使用其构建六面体网格的方法

    公开(公告)号:US06573892B1

    公开(公告)日:2003-06-03

    申请号:US09699680

    申请日:2000-10-30

    IPC分类号: G06T1700

    CPC分类号: G06T17/20

    摘要: A method of constructing surface element layers for improving boundary shape of a hexahedral mesh used in finite element analysis comprises constructing a core mesh by superimposing a regular grid on a region to be meshed and removing external elements and external nodes of the region to be meshed; amending the core mesh to have a boundary shape similar to that of the region to be meshed by repositioning nodes on the boundary of the core mesh; constructing imaginary thin surface element layers on a boundary surface of the amended core mesh; and performing a mesh smoothing on the imaginary thin surface element layers.

    摘要翻译: 用于改善用于有限元分析的六面体网格边界形状的表面元素层的方法包括通过在要啮合的区域上叠加规则网格并去除待啮合区域的外部元素和外部节点来构造核心网格; 通过重新定位在核心网格边界上的节点,将核心网格修改为具有类似于要啮合的区域的边界形状; 在经修改的芯网的边界表面上构造虚构的薄表面元素层; 以及在所述虚拟薄表面元件层上执行网格平滑。

    Split-gate flash memory and method of manufacturing the same

    公开(公告)号:US06524915B2

    公开(公告)日:2003-02-25

    申请号:US09954769

    申请日:2001-09-18

    IPC分类号: H01L21336

    摘要: A split-gate flash memory includes a first gate insulating layer formed on a semiconductor substrate; a floating gate formed on the first gate insulating layer; a first spacer surrounding the floating gate and a side wall; a first junction region formed on a predetermined portion of the semiconductor substrate between two adjacent floating gates and having an opposite conductivity to that of the semiconductor substrate; a first conductive line formed on the first junction region between two adjacent first spacers; a second gate insulating layer formed on both a predetermined portion of the semiconductor substrate and the side wall of the first spacer; a word line formed on the second gate insulating layer, and having a vertical side wall and a uniform width; a second spacer formed on the vertical side wall of the word line; a second junction region formed on a portion of the semiconductor substrate adjacent the second spacer and having the same conductivity as the first junction region; an interlayer insulator formed over the whole surface of the semiconductor and having a contact hole, the contact hole formed on a portion of the second junction region; and a second conductive line formed on the interlayer insulator and contacting the second junction region through the contact hole.

    Rail-type device for mechanically splicing optical fibers
    3.
    发明授权
    Rail-type device for mechanically splicing optical fibers 失效
    用于机械拼接光纤的轨道式装置

    公开(公告)号:US5708746A

    公开(公告)日:1998-01-13

    申请号:US571075

    申请日:1995-12-12

    IPC分类号: G02B6/24 G02B6/38 G02B6/36

    摘要: A structurally improved rail-type device for mechanically splicing optical fibers while reducing the splicing loss is disclosed. The above splicing device not only has a cladding clamp with a seesaw structure thereby easily splicing the optical fibers, it also separately moves the covers relative to the body to easily perform the tuning operation. Due to coating clamp's protrusions and body's slots engaging with each other, the coating clamp exclusively vertically move relative to the body and prevent the optical fibers from being axially thrust. The splicing device further seperately clamps the coating and cladding parts of the optical fibers, thereby preventing the spliced fibers from breaking due to tensile or torsional force. The sliding motion of the covers relative to the body is achieved by the rails of the covers and rail grooves of the body.

    摘要翻译: 公开了一种结构改进的轨道式装置,用于在减少接头损耗的同时机械地拼接光纤。 上述拼接装置不仅具有跷跷板结构的包层夹具,从而容易地拼接光纤,而且还可以相对于主体单独移动盖子以容易地进行调谐操作。 由于涂层夹具的突起和主体的槽彼此接合,涂层夹具专门垂直地相对于主体移动,并且防止光纤被轴向推动。 接合装置进一步单独地夹持光纤的涂层和包层部分,从而防止接合的纤维由于拉伸或扭转力而断裂。 盖体相对于主体的滑动通过主体的盖和导轨槽的轨道实现。

    CLEANABLE AND REUSABLE BODY FLUID-ABSORBING FABRIC PAD
    4.
    发明申请
    CLEANABLE AND REUSABLE BODY FLUID-ABSORBING FABRIC PAD 审中-公开
    清洁和可重复使用的体液吸收织物垫

    公开(公告)号:US20110172621A1

    公开(公告)日:2011-07-14

    申请号:US12684519

    申请日:2010-01-08

    IPC分类号: A61F13/15

    摘要: Disclosed is a cleanable and reusable body fluid-absorbing fabric pad to move moisture including sweat and urine away from the skin of a wearer, the body fluid-absorbing fabric pad including, a diffusive fabric layer coming into contact with the skin of the wearer to remove moisture from the skin, an absorbent non-woven layer coming into contact with the diffusive fabric layer, the absorbent non-woven layer comprising at least 5 wt % of a superabsorbent fiber to remove moisture transported from the diffusive fabric layer, and a waterproof film coming into contact with the absorbent non-woven layer and exhibiting waterproofing properties and breathability. The absorbent non-woven layer is formed by needle-punching or thermally bonding superabsorbent fibers, polyethylene/polypropylene bi-component fibers and rayon fibers, wherein the diffusive fabric layer, the absorbent non-woven layer and the waterproof film are stacked and sewed to form the body fluid-absorbing fabric pad. The body fluid-absorbing fabric pad can utilize constituent fabrics having a multiple sublayer structure of the absorbent layer to increase diffusion rate of moisture from the skin of the wearer.

    摘要翻译: 公开了一种可清洁和可重复使用的体液吸收织物垫,用于将湿气(包括汗液和尿液)移离佩戴者的皮肤,体液吸收织物垫包括与穿着者的皮肤接触的漫射织物层 从皮肤去除水分,与漫射织物层接触的吸收性无纺布层,吸收性非织造层包含至少5重量%的超吸收纤维,以去除从漫射织物层输送的水分,以及防水 膜与吸收性无纺布层接触并具有防水性和透气性。 吸收性无纺布层通过针刺或热粘合超吸收纤维,聚乙烯/聚丙烯双组分纤维和人造纤维形成,其中将漫射织物层,吸收性无纺层和防水膜堆叠并缝合到 形成体液吸收织物垫。 体液吸收织物垫可以利用具有吸收层的多次层结构的构成织物以增加水分从穿着者皮肤的扩散速率。

    Method for manufacturing printed circuit board
    5.
    发明授权
    Method for manufacturing printed circuit board 有权
    印刷电路板制造方法

    公开(公告)号:US07208341B2

    公开(公告)日:2007-04-24

    申请号:US10855557

    申请日:2004-05-28

    IPC分类号: H01L21/48 H01L21/4763

    摘要: A method for manufacturing a printed circuit board includes: forming inner circuit patterns in an insulating material in multi-layers, forming a plurality of through holes at certain portions of the insulating material, and forming an outer circuit pattern which is electrically connected to the inner circuit pattern, at an inner circumferential surface of the through hole and the surface of the insulating material, and a terminal portion; forming a first photo solder resist layer at an entire surface of the insulating material and an entire surface of the outer circuit pattern, and exposing the terminal portion by removing a specific portion of the first photo solder resist layer; abrading the surface of the first photo solder resist layer; printing a second photo solder resist layer at the surface of the first photo solder resist layer, and exposing the terminal portion to the outside by removing a specific portion of the second photo solder resist layer; and forming a pad portion by plating the surface of the exposed terminal portion with gold, and electrically connecting the pad portion and the terminal portion.

    摘要翻译: 印刷电路板的制造方法包括:在多层绝缘材料中形成内部电路图案,在绝缘材料的某些部分形成多个通孔,并形成外部电路图形,该外部电路图形与内部 在通孔的内周面和绝缘材料的表面上形成电路图形,以及端子部分; 在所述绝缘材料的整个表面和所述外部电路图案的整个表面上形成第一光阻焊层,并且通过去除所述第一光阻焊层的特定部分来暴露所述端子部分; 研磨第一光阻焊层的表面; 在第一光阻焊层的表面上印刷第二光阻焊层,并通过去除第二光阻焊层的特定部分将端子部分暴露于外部; 以及通过用暴露的端子部分的表面镀金形成焊盘部分,并且电连接焊盘部分和端子部分。

    Split gate flash memory
    6.
    发明授权
    Split gate flash memory 失效
    分闸门闪存

    公开(公告)号:US06683340B2

    公开(公告)日:2004-01-27

    申请号:US10334944

    申请日:2002-12-31

    IPC分类号: H01L27108

    摘要: A split-gate flash memory includes a first gate insulating layer formed on a semiconductor substrate; a floating gate formed on the first gate insulating layer; a first spacer surrounding the floating gate and a side wall; a first junction region formed on a predetermined portion of the semiconductor substrate between two adjacent floating gates and having an opposite conductivity to that of the semiconductor substrate; a first conductive line formed on the first junction region between two adjacent first spacers; a second gate insulating layer formed on both a predetermined portion of the semiconductor substrate and the side wall of the first spacer; a word line formed on the second gate insulating layer, and having a vertical side wall and a uniform width; a second spacer formed on the vertical side wall of the word line; a second junction region formed on a portion of the semiconductor substrate adjacent the second spacer and having the same conductivity as the first junction region; an interlayer insulator formed over the whole surface of the semiconductor and having a contact hole, the contact hole formed on a portion of the second junction region; and a second conductive line formed on the interlayer insulator and contacting the second junction region through the contact hole.

    摘要翻译: 分闸式闪存包括形成在半导体衬底上的第一栅极绝缘层; 形成在第一栅绝缘层上的浮栅; 围绕浮动栅极和侧壁的第一间隔件; 形成在所述半导体衬底的预定部分上的两个相邻浮置栅极之间并且具有与所述半导体衬底相反的导电性的第一结区域; 形成在相邻的第一间隔物之间​​的第一结区上的第一导电线; 形成在半导体衬底的预定部分和第一间隔物的侧壁上的第二栅极绝缘层; 形成在所述第二栅极绝缘层上并具有垂直侧壁和均匀宽度的字线; 形成在字线的垂直侧壁上的第二间隔物; 形成在所述半导体衬底的与所述第二间隔物相邻并且具有与所述第一结区相同的导电性的部分上的第二结区; 形成在所述半导体的整个表面上并具有接触孔的层间绝缘体,所述接触孔形成在所述第二接合区域的一部分上; 以及形成在所述层间绝缘体上并通过所述接触孔接触所述第二接合区域的第二导电线。

    Eballistra lineata CM602(KCTC 10945BP) and phytase produced therefrom
    7.
    发明授权
    Eballistra lineata CM602(KCTC 10945BP) and phytase produced therefrom 有权
    Eballistra lineata CM602(KCTC 10945BP)和由其生产的植酸酶

    公开(公告)号:US07927860B2

    公开(公告)日:2011-04-19

    申请号:US12442485

    申请日:2007-09-21

    IPC分类号: C12N15/81 C12N9/12

    CPC分类号: C12R1/645 A23K20/189 C12N9/16

    摘要: The present invention relates to a novel yeast strain, Eballistra lineata CM602 (KCTC 10945BP) and a phytase produced by the strain. The phytase is thermo- and pH-stable, and also shows a superior enzyme activity at a body temperature of a domestic animal, thus being useful as an additive of forage which may increase the utilization of organic phosphorus. Further, Eballistra lineata CM602 (KCTC 10945BP) strain may be used for a mass-production of enzyme by maximizing biosynthesis of phytase by means of gene recombination techniques, fermentation and optimization.

    摘要翻译: 本发明涉及一种新型酵母菌株Eballistra lineata CM602(KCTC10945BP)和由菌株产生的植酸酶。 植酸酶是热稳定性和pH稳定的,并且在家畜的体温下也显示出优异的酶活性,因此可用作饲料添加剂,其可以增加有机磷的利用。 此外,Eballistra lineata CM602(KCTC 10945BP)菌株可以通过基因重组技术,发酵和优化最大化植酸酶的生物合成来大量生产酶。

    Method for making fabric with excellent water transition ability
    8.
    发明授权
    Method for making fabric with excellent water transition ability 有权
    制造具有优异的水过渡能力的织物的方法

    公开(公告)号:US06381994B1

    公开(公告)日:2002-05-07

    申请号:US09892761

    申请日:2001-06-28

    申请人: Young-Kyu Lee

    发明人: Young-Kyu Lee

    IPC分类号: D04B116

    摘要: Disclosed is a method for making a woven or knitted fabric with an excellent water transition ability, involving the steps of fabricating a woven or knitted fabric having a double weave structure by use of a polyethyleneterephthalate (PET) filament for one surface of said fabric and a divided PET/nylon-conjugated fiber for the other surface of said fabric, and subjecting said fabric to a weight loss finishing process. Since the fabric has a void size difference between the surfaces thereof in accordance with the weight loss finishing process, it can externally discharge, at a high velocity, moisture absorbed therein.

    摘要翻译: 公开了一种制造具有优异的水过渡能力的机织或针织物的方法,包括通过使用所述织物的一个表面的聚对苯二甲酸乙二醇酯(PET)丝制造具有双重编织结构的机织或针织物的步骤,以及 用于所述织物的另一表面的分开的PET /尼龙共轭纤维,并对所述织物进行减重整理过程。 由于织物根据减重精加工在其表面之间具有空隙尺寸差异,因此可以高速地外部地吸收其中吸收的水分。

    Semiconductor device including contact structure, method of fabricating the same, and electronic system including the same
    9.
    发明授权
    Semiconductor device including contact structure, method of fabricating the same, and electronic system including the same 有权
    包括接触结构的半导体器件及其制造方法,以及包括该结构的电子系统

    公开(公告)号:US08791510B2

    公开(公告)日:2014-07-29

    申请号:US13488634

    申请日:2012-06-05

    申请人: Young-Kyu Lee

    发明人: Young-Kyu Lee

    IPC分类号: H01L21/336

    摘要: A semiconductor device includes a gate structure on a semiconductor substrate, an impurity region at a side of the gate structure and the impurity region is within the semiconductor substrate, an interlayer insulating layer covering the gate structure and the impurity region, a contact structure extending through the interlayer insulating layer and connected to the impurity region, and an insulating region. The contact structure includes a first contact structure that has a side surface surrounded by the interlayer insulating layer and a second contact structure that has a side surface surrounded by the impurity region. The insulating region is under the second contact structure.

    摘要翻译: 半导体器件包括半导体衬底上的栅极结构,栅极结构一侧的杂质区域和杂质区域在半导体衬底内,覆盖栅极结构和杂质区域的层间绝缘层,延伸穿过 层间绝缘层并与杂质区连接,以及绝缘区。 接触结构包括具有由层间绝缘层包围的侧表面的第一接触结构和具有被杂质区包围的侧表面的第二接触结构。 绝缘区域处于第二接触结构之下。