摘要:
As a result of dedicated research, the present inventors have successfully invented a collagen gene construct which can be easily purified and maintains a triple helix structure equivalent to that of naturally-occurring collagen while having a low molecular weight. Specifically, one-step purification by affinity purification is enabled because CR-D (a signal peptide) has a carbohydrate recognition domain. By substituting a portion of a human collagen structural gene of the present invention with the collagen-like structural gene portion of MBL, a low-molecular-weight collagen which maintains a triple helix structure and is thermally stable can be obtained with high purity and in large quantities.
摘要:
The invention provides transition metal complex compounds, high-activity olefin oligomerization catalysts containing the compounds, and olefin oligomerization processes using the catalysts.A transition metal complex compound [A] according to the invention is represented by Formula (I) or Formula (I′) below. An olefin oligomerization catalyst includes the transition metal complex compound [A]. In an olefin oligomerization process of the invention, an olefin is oligomerized in the presence of the catalyst.
摘要:
An apparatus for treating an exhaust gas that includes a pre-treatment section that removes a powdery component, a water-soluble component or a hydrolytic component from the exhaust gas. The exhaust gas contains a fluorine compound and CO. A heating oxidative decomposing section performs heating oxidative decomposition of at least one of the fluorine compound and CO to detoxify the exhaust gas. The apparatus also has a post-treatment section for post-treating an acid gas such as HF which has been produced by the heating oxidative decomposition.
摘要:
A semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.
摘要:
An electric contact of high performance that is constituted of a Cd-free Ag alloy posing no toxic problem, excels in insulating capability and can ensure stability of brazing and consumption characteristics and that can be used in a breaker or high-load electromagnetic switch; and electrical equipment including the electric contact. In particular, an electric contact comprised of an Ag alloy containing 1 to 9 mass % of Sn in which the amount of Cd as impurity is 0 or less than 0.01 mass %, the electric contact having a double layer structure composed of a surface-side first layer and an interior second layer wherein the first layer has a thickness of 10 μm or greater and has an average hardness of 150 or higher on the microvickers scale stipulated in JIS while the second layer has an average hardness of higher than 130 on the same scale.
摘要:
A method corrects thermal displacement of a machine tool having a rotational spindle. The method includes detecting a rotation speed of the spindle. A thermal displacement amount of the spindle in the current cycle of execution of a program is estimated by using an arithmetic expression that is based at least on the spindle rotation speed and a thermal displacement amount that has been estimated in the preceding cycle of execution of the program. The estimated thermal displacement amount in the current cycle is used as a correction amount for canceling the thermal displacement of the spindle. Therefore, thermal displacement of a machine tool is corrected with no complicated processes when a spindle rotation speed changes.
摘要:
When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V compound semiconductor layers is controlled to satisfy 0
摘要:
When a command radius r of a circular interpolation control exceeds a threshold value, a computer computes a speed limit for the circular speed at which the acceleration becomes constant. When the command radius r of the circular interpolation control is less than or equal to the threshold value, the computer 100 computes another speed limit for the circular speed at which rω3 or rω4 becomes constant, where ω is the angular frequency. The computer performs the circular interpolation control by safeguarding the circular speed from exceeding one of the speed limits in accordance with the command radius r of the circular interpolation control.
摘要:
A machine tool moves a driven member by use of a servomotor. A position control device controls the position of the driven member in accordance with full closed loop control. The position control device computes an integrated feedback value g in correspondence with a function F (VM, PM, Vm, Pm) in which four state amounts, motor speed VM, motor position PM, driven member speed Vm, and driven member position Pm are independent variables. The thrust instruction τ*, which is inputted to the servomotor, is compensated with the integrated feedback value g. The servomotor is thus optimally driven and controlled in accordance with full closed loop control.
摘要:
The present invention is intended to provide an olefin polymerization catalyst comprising a novel transition metal compound and having an excellent olefin polymerization activity and to provide a process for olefin polymerization.