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    Device containing non-blinking quantum dots
    1.
    发明授权
    Device containing non-blinking quantum dots 有权
    包含非闪烁量子点的设备

    公开(公告)号：US08242515B2

    公开(公告)日：2012-08-14

    申请号：US12791173

    申请日：2010-06-01

    Applicant: Keith B. Kahen ,  Xiaofan Ren

    Inventor： Keith B. Kahen ,  Xiaofan Ren

    IPC: H01L27/15

    CPC classification number: C09K11/025 ,  C09K11/883

    Abstract: An optoelectronic device including two spaced apart electrodes; and at least one layer containing ternary core/shell nanocrystals disposed between the spaced electrodes and having ternary semiconductor cores containing a gradient in alloy composition and wherein the ternary core/shell nanocrystals exhibit single molecule non-blinking behavior characterized by on times greater than one minute or radiative lifetimes less than 10 ns.

    Abstract translation: 包括两个间隔开的电极的光电器件; 以及至少一层含有三元核/壳纳米晶体的层，其设置在间隔开的电极之间并且具有含有合金组成梯度的三元半导体芯，并且其中三元核/壳纳米晶体表现出单分子非眨眼行为，其特征在于大于1分钟 或辐射寿命小于10 ns。

    Electroluminescent device
    5.
    发明申请
    Electroluminescent device 有权
    电致发光器件

    公开(公告)号：US20070087219A1

    公开(公告)日：2007-04-19

    申请号：US11254108

    申请日：2005-10-19

    Applicant: Xiaofan Ren ,  Christopher Brown

    Inventor： Xiaofan Ren ,  Christopher Brown

    IPC: H01L51/54

    CPC classification number: C09K11/06 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1014 ,  C09K2211/1033 ,  C09K2211/1037 ,  C09K2211/1044 ,  C09K2211/1055 ,  C09K2211/107 ,  C09K2211/1088 ,  C09K2211/185 ,  H01L51/008 ,  H01L51/0085 ,  H01L51/0094 ,  H01L51/5016 ,  H05B33/20 ,  Y10S428/917

    Abstract: An OLED device comprises a cathode and an anode and has located therebetween a light-emitting layer comprising a phosphorescent light-emitting material and a host comprising a compound of a tetravalent atom wherein the four groups bonded to the atom are aromatic rings, at least one of which contains an electron-withdrawing group (EWG) substituent comprising at least three atoms, the compound having a triplet energy of at least 2.7 eV and a LUMO energy within 0.6 eV of the LUMO energy of at least one material in an adjacent layer on the cathode side of the light-emitting layer. Particular embodiments include certain tetravalent silicon compounds. The light-emitting layer emits blue light and provides good luminance and reduced drive voltage.

    Abstract translation: 一种OLED器件包括阴极和阳极，并且在它们之间具有包含磷光发光材料的发光层和包含四原子化合物的主体，其中与原子键合的四个基团是芳环，至少一个 其包含至少三个原子的吸电子基团（EWG）取代基，该化合物具有至少2.7eV的三重态能量和在邻近层中的至少一种材料的LUMO能量的0.6eV以内的LUMO能量 发光层的阴极侧。 具体实施方案包括某些四价硅化合物。 发光层发出蓝光，并提供良好的亮度和降低的驱动电压。

    MAKING FILMS COMPOSED OF SEMICONDUCTOR NANOCRYSTALS
    6.
    发明申请
    MAKING FILMS COMPOSED OF SEMICONDUCTOR NANOCRYSTALS 审中-公开
    制备半导体纳米晶体的薄膜

    公开(公告)号：US20110076839A1

    公开(公告)日：2011-03-31

    申请号：US12568980

    申请日：2009-09-29

    Applicant: Xiaofan Ren ,  Keith B. Kahen

    Inventor： Xiaofan Ren ,  Keith B. Kahen

    IPC: H01L21/20

    CPC classification number: H01L21/02551 ,  C09K11/025 ,  C09K11/883 ,  H01L21/02628

    Abstract: A method of making a film of large II-VI nanocrystals, including: providing a mixture of column II, column VI chemical precursors, and coordinating solvents selected from amines, phosphines, phosphine oxides, esters, ethers, or combinations thereof by: injecting under heat a higher molar quantity of column II chemical precursor than column VI chemical precursor; and ii) increasing the ratio of column VI to column II chemical precursors during the course of the reaction while still heating the mixture until the molar ratio of column VI chemical precursor to column II chemical precursor is in a range of 1 to 10; heating the mixture to grow large nanocrystals functionalized with coordinating ligands; washing the grown nanocrystals to remove the unreacted precursors and excess coordinating solvents; and d) depositing the large II-VI nanocrystals on a substrate in order to form the film.

    Abstract translation: 制备大型II-VI纳米晶体的膜的方法，包括：提供柱II，VI族化学前体和选自胺，膦，氧化膦，酯，醚或其组合的配位溶剂的混合物，方法如下： 加热比第VI列化学前体更高摩尔量的柱II化学前体; 和ii）在反应过程中增加第VI列与第II列化学前体的比例，同时仍然加热混合物，直到列VI化学前体与第II列化学前体的摩尔比在1至10的范围内; 加热混合物以生长用配位配位体官能化的大的纳米晶体; 洗涤生长的纳米晶体以除去未反应的前体和过量的配位溶剂; 以及d）将大的II-VI纳米晶体沉积在基底上以形成膜。

    DEVICE CONTAINING NON-BLINKING QUANTUM DOTS
    7.
    发明申请
    DEVICE CONTAINING NON-BLINKING QUANTUM DOTS 有权
    包含非闪烁量子的设备

    公开(公告)号：US20100289001A1

    公开(公告)日：2010-11-18

    申请号：US12791173

    申请日：2010-06-01

    Applicant: Keith B. Kahen ,  Xiaofan Ren

    Inventor： Keith B. Kahen ,  Xiaofan Ren

    IPC: H01L33/06

    CPC classification number: C09K11/025 ,  C09K11/883

    Abstract: An optoelectronic device including two spaced apart electrodes; and at least one layer containing ternary core/shell nanocrystals disposed between the spaced electrodes and having ternary semiconductor cores containing a gradient in alloy composition and wherein the ternary core/shell nanocrystals exhibit single molecule non-blinking behavior characterized by on times greater than one minute or radiative lifetimes less than 10 ns.

    Abstract translation: 包括两个间隔开的电极的光电器件; 以及至少一层含有三元核/壳纳米晶体的层，其设置在间隔开的电极之间并且具有含有合金组成梯度的三元半导体芯，并且其中三元核/壳纳米晶体表现出单分子非眨眼行为，其特征在于大于1分钟 或辐射寿命小于10 ns。

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