公开(公告)号：US20100232245A1

公开(公告)日：2010-09-16

申请号：US12293817

申请日：2007-03-27

Applicant: Victor M. G. Van Acht ,  Nicolaas Lambert

Inventor： Victor M. G. Van Acht ,  Nicolaas Lambert

IPC: G11C7/02

CPC classification number: G11C7/02 ,  G11C7/062 ,  G11C7/14 ,  G11C7/18

Abstract: Data is read from a memory matrix (10) with a plurality of bit lines (12). A differential sense amplifier (14) receives a signal derived from a first one of the bit lines (12) on a first input. The differential sense amplifier (14) receives a reference signal from a reference output of a reference circuit (15) to a second input. A second one of the bit lines (12), which is adjacent to the first one of the bit lines (12), is coupled to the reference circuit (15), so that a bit line signal value on the second one of the bit lines (12) affects a reference signal value on the reference output, at least partly reproducing an effect of crosstalk of the bit line signal value (12) on the second one of the bit lines (12) on a bit line signal value on the first one of the bit lines (12).

Abstract translation: 从具有多个位线（12）的存储矩阵（10）中读取数据。 差分读出放大器（14）在第一输入端接收从位线（12）中的第一位导出的信号。 差分读出放大器（14）从参考电路（15）的参考输出接收参考信号到第二输入端。 与位线（12）中的第一位相邻的位线（12）中的第二位被耦合到参考电路（15），使得位的第二位上的位线信号值 行（12）影响参考输出上的参考信号值，至少部分地再现位线信号值（12）上的位线信号值（12）对第二位线（12）上的串扰的影响 第一个位线（12）。

公开(公告)号：US08402325B2

公开(公告)日：2013-03-19

申请号：US11573192

申请日：2005-07-22

Applicant: Sebastian Egner ,  Nicolaas Lambert ,  Ludovicus M. G. M. Tolhuizen ,  Victor M. G. Van Acht ,  Martinus W. Blum

Inventor： Sebastian Egner ,  Nicolaas Lambert ,  Ludovicus M. G. M. Tolhuizen ,  Victor M. G. Van Acht ,  Martinus W. Blum

IPC: G06F11/08 ,  G06F11/32

CPC classification number: G06F11/1012 ,  G06F11/1068 ,  G11B20/1816 ,  G11B20/1833 ,  H03M13/35

Abstract: A data storage and replay device uses measurements of the evolution of performance of the storage medium (typically a flash memory circuit) to predict an error rate of retrieval from a region of the storage medium. The prediction is used as a basis for dynamically selecting an ECC for encoding the data prior to storage of the data. The ECC is selected from a plurality of available ECC's so that a fastest encodable ECC is selected that is predicted to produce no more than a predetermined post-decoding error rate given the information. On decoding the data, which is typically audio or video data, is decoded and replayed at a predetermined speed. In another embodiment, the data stored using a plurality of ECC's together and an ECC is selected dynamically for decoding, so that an output data rate can be maximized or power consumption on replay can be minimized.

Abstract translation: 数据存储和重放设备使用存储介质（通常为闪速存储器电路）性能演变的测量来预测从存储介质的区域检索的错误率。 该预测用作在存储数据之前动态选择用于对数据进行编码的ECC的基础。 从多个可用ECC中选择ECC，使得选择最快的可编码ECC，其被预测产生不超过给定信息的预定解码后错误率。 在对通常是音频或视频数据的数据进行解码时，以预定速度进行解码和重放。 在另一个实施例中，动态地选择使用多个ECC存储的数据和ECC，以进行解码，从而可以使输出数据速率最大化，或者可以最大限度地减少重播的功耗。

公开(公告)号：US07579968B2

公开(公告)日：2009-08-25

申请号：US11572807

申请日：2005-07-19

Applicant: Victor M. G. Van Acht ,  Nicolaas Lambert ,  Sebastian Egner ,  Hans M. B. Boeve

Inventor： Victor M. G. Van Acht ,  Nicolaas Lambert ,  Sebastian Egner ,  Hans M. B. Boeve

IPC: H03M5/02

CPC classification number: H03M5/04 ,  G11C11/56 ,  G11C11/5621 ,  H03M5/20

Abstract: A data processing circuit comprises an encoder circuit for encoding a data word, wherein each digit may have any one of three or more digit values. The data word is encoded so that digit counts in the data word satisfy predetermined criteria (the digit counts are counts of the numbers of the digits in the encoded data word that assume respective digit values). The encoder defines at least two digit maps, each digit map defining assignments of each of the available digit values to a respective different output digit value. The encoder selects at least two groups of digits within the input data word. Each group is associated with a respective one of the digit maps, the groups being selected so that when each digit map has been applied selectively to the digits from its associated group, digit counts of the number of times respective digit values occur in the data word will satisfy predetermined criteria. A data signal is generated that represents the input data word by information that identifies the selected groups and an output data word obtained by mapping the digits of each group in the input data word according to the digit map for that group.

Abstract translation: 数据处理电路包括用于对数据字进行编码的编码器电路，其中每个数字可以具有三个或更多个数字值中的任何一个。 对数据字进行编码，使得数据字中的数字计数满足预定标准（数字计数是在编码数据字中的数字的数量的计数，该数字字代表各自的数字值）。 编码器定义至少两个数字映射，每个数字映射将每个可用数字值的分配定义为相应的不同的输出数字值。 编码器在输入数据字中选择至少两组数字。 每个组与数字映射中的相应一个相关联，这些组被选择，使得当每个数字映射已被选择性地应用于来自其关联组的数字时，相应数字值在数据字中出现的次数的数字计数 将满足预定的标准。 生成数据信号，其通过标识所选择的组的信息和通过根据该组的数字映射映射输入数据字中的每个组的数字而获得的输出数据字来生成输入数据字。

公开(公告)号：US07483324B2

公开(公告)日：2009-01-27

申请号：US11577711

申请日：2005-10-17

Applicant: Johannis F. R. Blacquiere ,  Victor M. G. Van Acht

Inventor： Johannis F. R. Blacquiere ,  Victor M. G. Van Acht

IPC: G11C7/00

CPC classification number: G11C16/3418 ,  G11C16/3431

Abstract: The present invention relates to a non-volatile memory device, comprising a memory array (10, 20) with a plurality of memory cells (100, 200) arranged in rows and columns, bit line conductors (12, 22) coupled to said rows of memory cells, an averaging circuit (11, 21) with inputs coupled to a plurality of said bit line conductors (12, 22) and being arranged to determine an average level on respective analog signal levels on said plurality of bit line conductors (12, 22), a monitoring circuit (13, 23) coupled to said averaging circuit (11, 21) and being arranged to monitor said average level and to output a refresh command when said average level shows a predetermined behavior, and a refresh circuit (15, 25) coupled to said monitoring circuit (13, 23) and being arranged to refresh at least a selection of said plurality of memory cells (100, 200) in response to said refresh command.

Abstract translation: 本发明涉及一种非易失性存储器件，其包括具有以行和列排列的多个存储器单元（100,200）的存储器阵列（10,20），位于所述行中的位线导体（12,22） 存储器单元的平均电平，平均电路（11,21），其具有耦合到多个所述位线导体（12,22）的输入，并被布置成确定所述多个位线导体（12）上的相应模拟信号电平的平均电平 ，22），耦合到所述平均电路（11,21）的监控电路（13,23），并且被布置成在所述平均电平显示预定行为时监视所述平均电平并输出刷新命令，以及刷新电路 15,25）耦合到所述监视电路（13,23），并且被布置为响应于所述刷新命令来刷新所述多个存储单元（100,200）中的至少一个选择。

公开(公告)号：US09213627B2

公开(公告)日：2015-12-15

申请号：US12158978

申请日：2006-12-13

Applicant: Victor M. G. Van Acht ,  Nicolaas Lambert

Inventor： Victor M. G. Van Acht ,  Nicolaas Lambert

IPC: G06F12/02

CPC classification number: G06F12/0246

Abstract: A main memory (10) comprises a plurality of physical blocks of memory locations. The main memory (10) supports erasing of at least a physical block at a time. Pointer information is stored in a subset (40, 42) of the blocks for use to identify respective ones of the physical blocks that are assigned to respective functions. Successive versions of the pointing information are stored at mutually different memory locations initially in a first block (40) in the subset (40, 42). A subsequent version of the pointing information that is more recent than the successive versions is stored in a second block (42) of the subset (40, 42) at least after the first block (40) has been filled. The first block (40) is erased after storing the subsequent version. On start up of the main memory the pointing information is recovered by testing which of the blocks of the subset (40, 42) contains a most recent version of the pointing information.

Abstract translation: 主存储器（10）包括存储器位置的多个物理块。 主存储器（10）一次支持擦除至少一个物理块。 指针信息被存储在块的子集（40,42）中，用于标识被分配给各个功能的各个物理块。 指向信息的连续版本存储在最初在子集（40,42）中的第一块（40）中的彼此不同的存储器位置处。 至少在第一块（40）已被填充之后，比连续版本更新的指向信息的后续版本被存储在子集（40,42）的第二块（42）中。 第一块（40）在存储后续版本之后被擦除。 在主存储器的启动时，通过测试子集（40,42）中的哪个块包含指向信息的最新版本来恢复指向信息。

公开(公告)号：US07952949B2

公开(公告)日：2011-05-31

申请号：US12293817

申请日：2007-03-27

Applicant: Victor M. G. Van Acht ,  Nicolaas Lambert

Inventor： Victor M. G. Van Acht ,  Nicolaas Lambert

IPC: G11C7/04

CPC classification number: G11C7/02 ,  G11C7/062 ,  G11C7/14 ,  G11C7/18

Abstract: Data is read from a memory matrix (10) with a plurality of bit lines (12). A differential sense amplifier (14) receives a signal derived from a first one of the bit lines (12) on a first input. The differential sense amplifier (14) receives a reference signal from a reference output of a reference circuit (15) to a second input. A second one of the bit lines (12), which is adjacent to the first one of the bit lines (12), is coupled to the reference circuit (15), so that a bit line signal value on the second one of the bit lines (12) affects a reference signal value on the reference output, at least partly reproducing an effect of crosstalk of the bit line signal value (12) on the second one of the bit lines (12) on a bit line signal value on the first one of the bit lines (12).

Abstract translation: 从具有多个位线（12）的存储矩阵（10）中读取数据。 差分读出放大器（14）在第一输入端接收从位线（12）中的第一位导出的信号。 差分读出放大器（14）从参考电路（15）的参考输出接收参考信号到第二输入端。 与位线（12）中的第一位相邻的位线（12）中的第二位被耦合到参考电路（15），使得位的第二位上的位线信号值 行（12）影响参考输出上的参考信号值，至少部分地再现位线信号值（12）上的位线信号值（12）对第二位线（12）上的串扰的影响 第一个位线（12）。

公开(公告)号：US20100103751A1

公开(公告)日：2010-04-29

申请号：US11813862

申请日：2006-01-05

Applicant: Victor M G Van Acht ,  Nicolaas Lambert ,  Pierre H. Woerlee

Inventor： Victor M G Van Acht ,  Nicolaas Lambert ,  Pierre H. Woerlee

IPC: G11C7/06 ,  G11C5/14 ,  G11C7/02

CPC classification number: G11C7/14

Abstract: A circuit comprises an array of memory cells (10). A plurality of sensing circuits (20), are coupled to the output (14) of respective memory cells (10), for comparing the output signal of the respective one of the memory cells (10) with a reference signal to form a data signal from the output signal from the respective one of the memory cells (10). A reference generator circuit (24, 26) forms the reference signal from a sum wherein each respective one of the memory cells (10) of the addressed group contributes a contribution that is a function of the output signal of the respective one of the memory cells (10). The contributions are equalized for output signal values at more than a saturating distance above the reference signal, and the contributions are equalized for output signal values at more than the saturating distance below the reference signal. In case of storage of multi-level data in the cells the distances from the central level to the saturation levels above and below the reference level are mutually different, with a ratio that corresponds to a ratio of the counts of cells that have been programmed to respective levels.

Abstract translation: 电路包括存储器单元阵列（10）。 多个感测电路（20）耦合到相应存储单元（10）的输出（14），用于将存储单元（10）中的相应一个的输出信号与参考信号进行比较以形成数据信号 来自存储单元（10）中的相应一个的输出信号。 参考发生器电路（24,26）从一个和形成参考信号，其中寻址组的每个存储单元（10）中的每个相应的一个贡献作为存储单元的相应一个的输出信号的函数 （10）。 在超过参考信号的饱和距离上的输出信号值的贡献相等，并且在超过参考信号以下的饱和距离处的输出信号值的贡献相等。 在单元格中存储多级数据的情况下，从基准电平以上和低于基准电平的中心电平到饱和电平的距离是相互不同的，其比率对应于已经被编程的单元计数的比率 各级别。

公开(公告)号：US07923813B2

公开(公告)日：2011-04-12

申请号：US11914662

申请日：2006-05-04

Applicant: Paul Van Der Sluis ,  Andrei Mijiritskii ,  Pierre H. Woerlee ,  Victor M. G Van Acht ,  Nicolaas Lambert

Inventor： Paul Van Der Sluis ,  Andrei Mijiritskii ,  Pierre H. Woerlee ,  Victor M. G Van Acht ,  Nicolaas Lambert

IPC: H01L23/52 ,  H01L21/70

CPC classification number: G11C17/16 ,  H01L23/5252 ,  H01L27/112 ,  H01L27/11206 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A One Time Programmable (OTP) memory cell (10) comprising a first, metallic layer (12) coated with a second, conductive stable transition compound (14) with an insulating layer (16) there-between. The first and second layers (12, 14) are selected according to the difference in Gibbs Free Energy between them, which dictates the chemical energy that will be generated as a result of an exothermic chemical reaction between the two materials. The materials of the first and second layers (12, 14) are highly thermally stable in themselves but, when a voltage is applied to the cell (10), a localized breakdown of the insulative layer (16) results which creates a hotspot (18) that sets off an exothermic chemical reaction between the first and second layers (12, 14). The exothermic reaction generates sufficient heat (20) to create a short circuit across the cell and therefore reduce the resistance thereof.

Abstract translation: 一次性可编程（OTP）存储器单元（10），包括涂覆有第二导电稳定过渡化合物（14）的第一金属层（12），其间具有绝缘层（16）。 第一层和第二层（12,14）根据它们之间的吉布斯自由能的差异来选择，这决定了由于两种材料之间的放热化学反应而产生的化学能。 第一层和第二层（12,14）的材料本身是高度热稳定的，但是当向单元（10）施加电压时，导致绝缘层（16）的局部击穿产生热点（18 ），其在第一和第二层（12,14）之间引起放热化学反应。 放热反应产生足够的热量（20）以在电池上产生短路并因此降低其电阻。

公开(公告)号：US07913110B2

公开(公告)日：2011-03-22

申请号：US12281983

申请日：2007-03-05

Applicant: Victor M. G. Van Acht ,  Nicolaas Lambert

Inventor： Victor M. G. Van Acht ,  Nicolaas Lambert

IPC: G06F11/00

CPC classification number: G06F11/1068

Abstract: An apparatus comprises a memory with a matrix (10) with rows and columns of memory cells. A read access circuit (14, 16, 18) executes a read command to read a retrieval unit comprising data from a row of the memory cells from the matrix (10) and to output data from the retrieval unit. A processing circuit (12) coupled to the read access circuit (14, 16, 18) is configured to execute an extra read operation involving issuing the read command, receiving the extra data (24), performing error detection on only the extra data (24), using an error detecting code in which the extra data is coded, conditionally performing error correction on the data from the extra data (24) using data from the retrieval unit including the payload data (22), according to an error correcting code in which the retrieval unit is coded, if the error detection indicates an error in the extra data (24). The processing circuit (12) performs further processing using the data from the extra data (22) or the corrected extra data, dependent on whether the error detection indicates an error in the extra data (22).

Abstract translation: 一种装置包括具有带有存储单元的行和列的矩阵（10）的存储器。 读取访问电路（14,16,18）执行读取命令以从矩阵（10）读取包括来自存储器单元的行的数据的检索单元，并从检索单元输出数据。 耦合到读取访问电路（14,16,18）的处理电路（12）被配置为执行涉及发出读取命令的额外读取操作，接收附加数据（24），仅对附加数据执行错误检测 24），使用其中对所述额外数据进行编码的错误检测码，根据来自所述有效载荷数据（22）的检索单元的数据，使用来自所述附加数据（24）的数据对所述数据进行有条件地执行错误校正，所述纠错码 其中检索单元被编码，如果错误检测指示额外数据（24）中的错误。 处理电路（12）根据来自额外数据（22）的数据或校正的附加数据，根据该错误检测是否指示额外数据（22）中的错误，进行进一步处理。

公开(公告)号：US20090150748A1

公开(公告)日：2009-06-11

申请号：US11573192

申请日：2005-07-22

Applicant: Sebastian Egner ,  Nicolaas Lambert ,  Ludovicus M. G. M. Tolhuizen ,  Victor M. G. Van Acht ,  Martinus W. Blum

Inventor： Sebastian Egner ,  Nicolaas Lambert ,  Ludovicus M. G. M. Tolhuizen ,  Victor M. G. Van Acht ,  Martinus W. Blum

IPC: G06F11/10

CPC classification number: G06F11/1012 ,  G06F11/1068 ,  G11B20/1816 ,  G11B20/1833 ,  H03M13/35

Abstract: A data storage and replay device uses measurements of the evolution of performance of the storage medium (typically a flash memory circuit) to predict an error rate of retrieval from a region of the storage medium. The prediction is used as a basis for dynamically selecting an ECC for encoding the data prior to storage of the data. The ECC is selected from a plurality of available ECC's so that a fastest encodable ECC is selected that is predicted to produce no more than a predetermined post-decoding error rate given said information. In this way the speed of transmission of data to the device can be maximized while keeping the error rate below an acceptable level in the predicted future after decoding. On decoding the data, which is typically audio or video data, is decoded and replayed at a predetermined speed. In another embodiment, the data stored using a plurality of ECC's together and an ECC is selected dynamically for decoding, so that an output data rate can be maximized or power consumption on replay can be minimized.

Abstract translation: 数据存储和重放设备使用存储介质（通常为闪速存储器电路）性能演变的测量来预测从存储介质的区域检索的错误率。 该预测用作在存储数据之前动态选择用于对数据进行编码的ECC的基础。 从多个可用ECC中选择ECC，使得选择最快的可编码ECC，其被预测产生不超过给定所述信息的预定后解码错误率。 以这种方式，可以最大化数据传输到设备的速度，同时在解码之后将误差率保持在预测未来的可接受水平。 在对通常是音频或视频数据的数据进行解码时，以预定速度进行解码和重放。 在另一个实施例中，动态地选择使用多个ECC一起存储的数据和ECC，以进行解码，从而可以最大化输出数据速率或者可以最小化重播的功耗。