知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

29 records (took 0.017 seconds)

    Methods of forming capacitors
    1.
    发明授权
    Methods of forming capacitors 有权
    形成电容器的方法

    公开(公告)号：US09159551B2

    公开(公告)日：2015-10-13

    申请号：US12496890

    申请日：2009-07-02

    Applicant: Vassil Antonov ,  Vishwanath Bhat

    Inventor： Vassil Antonov ,  Vishwanath Bhat

    IPC: H01G4/00 ,  H01G5/00 ,  H01G7/00 ,  H01G9/00 ,  H01G13/00 ,  H01B13/00 ,  C23F1/00 ,  C23F3/00 ,  H01L21/02 ,  H01L21/3105 ,  H01L49/02

    CPC classification number: H01L21/02356 ,  H01L21/02175 ,  H01L21/02186 ,  H01L21/3105 ,  H01L28/65

    Abstract: A method of forming a capacitor includes depositing a dielectric metal oxide layer of a first phase to a thickness no greater than 75 Angstroms over an inner conductive capacitor electrode material. The first phase dielectric metal oxide layer has a k of at least 15. Conductive RuO2 is deposited over and into physical contact with the dielectric metal oxide layer. Then, the RuO2 and the dielectric metal oxide layer are annealed at a temperature below 500° C. The RuO2 in physical contact with the dielectric metal oxide during the annealing facilitates a change of the dielectric metal oxide layer from the first phase to a second crystalline phase having a higher k than the first phase. The annealed dielectric metal oxide layer is incorporated into a capacitor dielectric region of a capacitor construction. Other implementations are disclosed.

    Abstract translation: 形成电容器的方法包括在内部导电电容器电极材料上沉积第一相的电介质金属氧化物层至不大于75埃的厚度。 第一相介电金属氧化物层的k至少为15.导电RuO 2沉积在物理接触介电金属氧化物层上。 然后，RuO 2和介电金属氧化物层在低于500℃的温度下退火。退火期间与电介质金属氧化物物理接触的RuO 2促进介电金属氧化物层从第一相到第二晶体的变化 相具有比第一相高的k。 退火的介质金属氧化物层被结合到电容器结构的电容器电介质区域中。 公开了其他实现。

    Crystallographically orientated tantalum pentoxide and methods of making same
    3.
    发明授权
    Crystallographically orientated tantalum pentoxide and methods of making same 有权
    晶体取向的五氧化二钽及其制备方法

    公开(公告)号：US08208241B2

    公开(公告)日：2012-06-26

    申请号：US12132758

    申请日：2008-06-04

    Applicant: Vishwanath Bhat ,  Vassil Antonov

    Inventor： Vishwanath Bhat ,  Vassil Antonov

    IPC: H01G4/06

    CPC classification number: C23C16/405 ,  C23C16/4488 ,  C30B25/02 ,  C30B29/16 ,  H01L21/31637 ,  H01L28/65

    Abstract: Methods of forming an oxide are disclosed and include contacting a ruthenium-containing material with a tantalum-containing precursor and contacting the ruthenium-containing material with a vapor that includes water and optionally molecular hydrogen (H2). Articles including a first crystalline tantalum pentoxide and a second crystalline tantalum pentoxide on at least a portion of the first crystalline tantalum pentoxide, wherein the first tantalum pentoxide has a crystallographic orientation that is different than the crystallographic orientation of the second crystalline tantalum pentoxide, are also disclosed.

    Abstract translation: 公开了形成氧化物的方法，包括使含钌材料与含钽前体接触，并使含钌材料与包含水和任选的分子氢（H 2）的蒸气接触。 在第一结晶五氧化二钽的至少一部分上包含第一结晶五氧化二钽和第二结晶五氧化二钽的物品，其中第一五氧化二钽具有不同于第二结晶五氧化二钽的晶体取向的晶体取向，也是 披露

    CAPACITOR STRUCTURE WITH METAL BILAYER AND METHOD FOR USING THE SAME
    8.
    发明申请
    CAPACITOR STRUCTURE WITH METAL BILAYER AND METHOD FOR USING THE SAME 有权
    金属双层电容器结构及其使用方法

    公开(公告)号：US20120267757A1

    公开(公告)日：2012-10-25

    申请号：US13090277

    申请日：2011-04-20

    Applicant: Vassil Antonov ,  Vishwanath Bhat ,  Chris Carlson

    Inventor： Vassil Antonov ,  Vishwanath Bhat ,  Chris Carlson

    IPC: H01L29/92 ,  H01L21/04

    CPC classification number: H01L28/75 ,  H01L27/10844 ,  H01L28/65

    Abstract: A method for using a metal bilayer is disclosed. First, a bottom electrode is provided. Second, a dielectric layer which is disposed on and is in direct contact with the lower electrode is provided. Then, a metal bilayer which serves as a top electrode in a capacitor is provided. The metal bilayer is disposed on and is in direct contact with the dielectric layer. The metal bilayer consists of a noble metal in direct contact with the dielectric layer and a metal nitride in direct contact with the noble metal.

    Abstract translation: 公开了一种使用金属双层的方法。 首先，设置底部电极。 第二，提供了设置在下电极上并与下电极直接接触的电介质层。 然后，提供用作电容器中的顶部电极的金属双层。 金属双层配置在电介质层上并与电介质层直接接触。 金属双层由与电介质层直接接触的贵金属和与贵金属直接接触的金属氮化物组成。

    Capacitors
    9.
    发明授权
    Capacitors 有权
    电容器

    公开(公告)号：US08107218B2

    公开(公告)日：2012-01-31

    申请号：US12476948

    申请日：2009-06-02

    Applicant: Vassil Antonov ,  Vishwanath Bhat ,  Chris Carlson

    Inventor： Vassil Antonov ,  Vishwanath Bhat ,  Chris Carlson

    IPC: H01G4/06

    CPC classification number: H01G4/1272 ,  H01G4/1209 ,  H01G4/1218 ,  H01G4/1227 ,  H01G4/1245 ,  H01G4/1254 ,  H01G4/33

    Abstract: Some embodiments include methods of forming capacitors. A metal oxide mixture may be formed over a first capacitor electrode. The metal oxide mixture may have a continuous concentration gradient of a second component relative to a first component. The continuous concentration gradient may correspond to a decreasing concentration of the second component as a distance from the first capacitor electrode increases. The first component may be selected from the group consisting of zirconium oxide, hafnium oxide and mixtures thereof; and the second component may be selected from the group consisting of niobium oxide, titanium oxide, strontium oxide and mixtures thereof. A second capacitor electrode may be formed over the first capacitor electrode. Some embodiments include capacitors that contain at least one metal oxide mixture having a continuous concentration gradient of the above-described second component relative to the above-described first component.

    Abstract translation: 一些实施例包括形成电容器的方法。 可以在第一电容器电极上形成金属氧化物混合物。 金属氧化物混合物可以具有相对于第一组分的第二组分的连续浓度梯度。 连续浓度梯度可以对应于与第一电容器电极的距离增加时第二组分的浓度降低。 第一组分可以选自氧化锆，氧化铪及其混合物; 并且第二组分可以选自氧化铌，氧化钛，氧化锶及其混合物。 可以在第一电容器电极上形成第二电容器电极。 一些实施方案包括相对于上述第一组分含有至少一种具有上述第二组分的连续浓度梯度的金属氧化物混合物的电容器。

Patent Agency Ranking