Abstract:
A pixel is formed by sealing an insulating liquid and floating particles in an area defined by a first substrate, a second substrate and partitions. The width of the partition has to be reduced in order to improve the pixel brightness by enlarging a flat electrode. In this case, the height of the partition has to be reduced for retaining the mechanical strength. If the height of the partition is reduced, an area of the partition electrode becomes small, thus failing to retain the memory effect. The planar surface of the partition is then formed into a zigzag shape so as to increase the area of the partition electrode.
Abstract:
In a liquid crystal display device disposed with reflective regions and transmissive regions, two organic insulating films are formed on a connection terminal portion and radial non-uniformities are prevented from occurring when applying the upper organic insulating film. Pixel portions including transmissive regions and reflective regions are formed, and a second organic insulating film is formed between a metal layer that forms reflective electrodes and a transparent conductive film that forms pixel electrodes to planarize concavo-convexities in the reflective electrodes. In contact holes of a connection terminal portion, the inclination of a first organic resin film is made smooth to control the occurrence of radial non-uniformities occurring in the second organic insulating film.
Abstract:
An active matrix liquid crystal display device includes a plurality of gate signal lines and a plurality of drain signal lines formed on a substrate. The gate signal lines extend in parallel to one another, and the drain signal lines extend in parallel to one another, and a dummy line is formed between each of adjacent parallel extending drain signal lines.
Abstract:
The present invention prevents the diffusion of an aluminum element into a polysilicon layer in a heating step when an aluminum-based conductive layer is used in a source/drain electrode which is in contact with low-temperature polysilicon whereby the occurrence of defective display can be obviated. An aluminum-based conductive layer is used in a source/drain electrode and a barrier layer made of molybdenum or a molybdenum alloy layer is formed between the aluminum-based conductive layer and a polysilicon layer. Further, a molybdenum oxide nitride film formed by the rapid heat treatment (rapid heat annealing) in a nitrogen atmosphere is formed over a surface of the molybdenum or the molybdenum alloy which constitutes the barrier layer.
Abstract:
An interconnecting structure and a pixel structure suited to large-sized screens are formed. A counter line/electrode is formed on a TFT substrate, and the counter line/electrode is made of a stacked structure film in which a layer made of aluminum or an alloy essentially containing aluminum is covered with a high-melting point metal film, and a transparent conductive film which covers the stacked structure film.
Abstract:
A liquid crystal display unit is used that has data lines made of a molybdenum-alloyed film having a chromium content from 2 wt. % or more, but up to 5 wt. %, or a molybdenum-alloyed film lamination (Mo—Cr) consisting of a first electroconductive film and a second electroconductive film, with the first electroconductive film having a chromium content from 2 wt. % or more, but up to 5 wt. % and the second electroconductive film being provided above the first electroconductive film and containing less chromium than the first electroconductive film does. The use of the data lines composed of these materials enables the following requirements to be satisfied: high dry-etching resistance, low resistance, low ACF contact resistance, low side etching rates, forward tapered wiring cross-sectional shape, and up to two lamination layers.
Abstract:
A polycrystalline Si thin film transistor substrate having a self-aligned LDD and provided with a gate made of a Mo—W alloy having a W concentration not lower than 5% by weight and lower than 25% by weight and preferably a W concentration of 17 to 22% by weight, which is formed by a process comprising a wet-etching step using an etching solution having a phosphoric acid concentration of 60% to 70% by weight, has uniform characteristic properties and is excellent in productivity.
Abstract:
A liquid crystal display device comprising a wiring line of a laminated structure over an insulating substrate. The laminated structure includes a first layer made of a first metal layer, and a second layer formed over the first layer and made of a second metal layer having the same principal component as that of the first metal layer but a different added element and/or a different composition. The first layer has a side end face of a right-tapered shape, whereas the second layer has a side end face set at a right angle or counter-tapered with respect to the substrate face.
Abstract:
A liquid crystal display device has good contact characteristics between an etched side end portion of a lower layer wiring line and an insulating film and the like, satisfactory step coverage, and satisfactory adhesion to a substrate so that disconnection of an upper layer wiring line and short-circuiting of the lower layer wiring line can be prevented to improve reliability. The liquid crystal display device comprises a wiring line having a laminated structure including a first layer which is made from a first metal layer formed over an insulating substrate and a second layer which is made from a second metal layer different from the first metal layer and is formed over the first metal layer, and the side end face of the first layer has a right-tapered shape with a taper angle of 60° or less, while the side end face of the second layer is approximately perpendicular to or counter-tapered with respect to the insulating substrate. The second layer has a thickness not greater than ½ of that of the first layer.
Abstract:
A liquid crystal display apparatus is high in manufacturing yield because defects caused by short-circuiting between the electrodes are eliminated. The liquid crystal display apparatus employs films made of an Al—Nd alloy of Nd content of 1 to 4.5 wt % in at least one of the gate wiring and the data wiring.