Invention Grant
- Patent Title: Display device manufacturing method preventing diffusion of an aluminum element into a polysilicon layer in a heating step
- Patent Title (中): 在加热步骤中防止铝元素扩散到多晶硅层中的显示器件制造方法
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Application No.: US11180658Application Date: 2005-07-14
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Publication No.: US07479451B2Publication Date: 2009-01-20
- Inventor: Yuichi Harano , Jun Gotoh , Toshiki Kaneko , Masanao Yamamoto
- Applicant: Yuichi Harano , Jun Gotoh , Toshiki Kaneko , Masanao Yamamoto
- Applicant Address: JP Chiba
- Assignee: Hitachi Displays, Ltd.
- Current Assignee: Hitachi Displays, Ltd.
- Current Assignee Address: JP Chiba
- Agency: Reed Smith LLP
- Agent Stanley P. Fisher, Esq.; Juan Carlos A. Marquez, Esq.
- Priority: JP2003-002834 20030109
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
The present invention prevents the diffusion of an aluminum element into a polysilicon layer in a heating step when an aluminum-based conductive layer is used in a source/drain electrode which is in contact with low-temperature polysilicon whereby the occurrence of defective display can be obviated. An aluminum-based conductive layer is used in a source/drain electrode and a barrier layer made of molybdenum or a molybdenum alloy layer is formed between the aluminum-based conductive layer and a polysilicon layer. Further, a molybdenum oxide nitride film formed by the rapid heat treatment (rapid heat annealing) in a nitrogen atmosphere is formed over a surface of the molybdenum or the molybdenum alloy which constitutes the barrier layer.
Public/Granted literature
- US20050250273A1 Display device and manufacturing method of the same Public/Granted day:2005-11-10
Information query
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