Invention Grant
US07479451B2 Display device manufacturing method preventing diffusion of an aluminum element into a polysilicon layer in a heating step 有权
在加热步骤中防止铝元素扩散到多晶硅层中的显示器件制造方法

Display device manufacturing method preventing diffusion of an aluminum element into a polysilicon layer in a heating step
Abstract:
The present invention prevents the diffusion of an aluminum element into a polysilicon layer in a heating step when an aluminum-based conductive layer is used in a source/drain electrode which is in contact with low-temperature polysilicon whereby the occurrence of defective display can be obviated. An aluminum-based conductive layer is used in a source/drain electrode and a barrier layer made of molybdenum or a molybdenum alloy layer is formed between the aluminum-based conductive layer and a polysilicon layer. Further, a molybdenum oxide nitride film formed by the rapid heat treatment (rapid heat annealing) in a nitrogen atmosphere is formed over a surface of the molybdenum or the molybdenum alloy which constitutes the barrier layer.
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