EMR structure with bias control and enhanced linearity of signal
    5.
    发明授权
    EMR structure with bias control and enhanced linearity of signal 失效
    EMR结构具有偏置控制和增强的信号线性度

    公开(公告)号:US07466521B2

    公开(公告)日:2008-12-16

    申请号:US11411606

    申请日:2006-04-25

    CPC classification number: G11B5/3993 G11B2005/0016 G11C11/14

    Abstract: An extraordinary magnetoresistive device EMR having a discontinuous shunt structure. The discontinuous shunt structure improves the linearity of response of the EMR device. The EMR device includes a EMR heterostructure that includes an EMR active layer. The heterostructure can include first, second and third semiconductor layers, with the second layer being sandwiched between the first and third layers. The middle, or second semiconductor layer provides a two dimensional electron gas. The heterostructure has first and second opposed sides, with a pair of voltage leads and a pair of current leads connected with the first side of the structure. The discontinuous shunt structure is connected with the second side of the structure and may be in the form of a series of discontinuous, electrically conductive elements, such as semi-spherical gold elements.

    Abstract translation: 具有不连续分流结构的非凡磁阻器件EMR。 不连续的分流结构提高了EMR器件的响应线性。 EMR器件包括EMR异质结构,其包括EMR有源层。 异质结构可以包括第一,第二和第三半导体层,第二层夹在第一和第三层之间。 中间或第二半导体层提供二维电子气。 异质结构具有第一和第二相对侧,一对电压引线和一对与结构的第一侧连接的电流引线。 不连续的分流结构与结构的第二侧连接,并且可以是一系列不连续的导电元件,例如半球状金元素的形式。

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