摘要:
A resist composition contains a resin having a structural unit represented by the formula (aa) and a structural unit represented by the formula (ab); and an acid generator, wherein Raa1 represents a hydrogen atom and a methyl group; Aaa1 represents an optionally substituted C1 to C6 alkanediyl group etc.; Raa2 represents an optionally substituted C1 to C18 aliphatic hydrocarbon group; Rab1 represents a hydrogen atom and a methyl group; Aab1 represents a single bond, an optionally substituted C1 to C6 alkanediyl group etc.; W1 represents an optionally substituted C4 to C36 alicyclic hydrocarbon group; n represents 1 or 2; Aab2 in each occurrence independently represents an optionally substituted C1 to C6 aliphatic hydrocarbon group; Rab2 in each occurrence independently represents a C1 to C12 fluorinated alkyl group.
摘要:
A Photoresist composition comprising a polymer comprising a structural unit derived from a compound represented by the formula (I): wherein R1 represents a hydrogen atom or a methyl group, R2 represents a C6-C12 aromatic hydrocarbon group which can have one or more substituents, R3 represents a cyano group or a C1-C12 hydrocarbon group which can have one or more substituents and which can contain one or more heteroatoms, A1 represents a single bond, —(CH2)g—CO—O—* or —(CH2)h—O—CO—(CH2)i—CO—O—* wherein g, h and i each independently represent an integer of −1 to 6 and * represents a binding position to the nitrogen atom, a resin having an acid-labile group and being insoluble or poorly soluble in an aqueous alkali solution but becoming soluble in an aqueous alkali solution by the action of an acid, and an acid generator.
摘要:
A resist composition includes (A) a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid, (B) an acid generator having a structure to be cleaved by the action of an alkaline developer, and (C) a compound represented by the formula (I), wherein R1 and R2 in each occurrence independently represent a C1 to C12 hydrocarbon group, a C1 to C6 alkoxyl group, a C2 to C7 acyl group, a C2 to C7 acyloxy group, a C2 to C7 alkoxycarbonyl group, a nitro group or a halogen atom; m and n independently represent an integer of 0 to 4.
摘要:
A resist composition contains; a resin having a structural unit represented by the formula (aa) and a structural unit represented by the formula (ab); and an acid generator, wherein Raa1 represents a hydrogen atom and a methyl group; Aaa1 represents an optionally substituted C1 to C6 alkanediyl group etc.; Raa2 represents an optionally substituted C1 to C18 aliphatic hydrocarbon group; Rab1 represents a hydrogen atom and a methyl group; Aab1 represents a single bond, an optionally substituted C1 to C6 alkanediyl group etc.; W1 represents an optionally substituted C4 to C24 alicyclic hydrocarbon group; n represents 1 or 2; Aab2 in each occurrence independently represents an optionally substituted C1 to C6 aliphatic hydrocarbon group; Rab2 in each occurrence independently represents a C1 to C12 fluorinated alkyl group.
摘要:
The present invention provides a photoresist composition comprising a resin, an acid generator and a compound represented by the formula (I): wherein R1, R2 and R3 each independently represent a hydrogen atom or a C1-C4 alkyl group, A1 represents a single bond or a C1-C2 alkylene group, R4 and R5 each independently represent a hydrogen atom or a C1-C2 alkyl group, R6 and R7 each independently represent a hydrogen atom etc.
摘要:
A salt represented by the formula (I-AA): wherein Q1 and Q2 each independently represent a fluorine atom or a C1-C4 perfluoroalkyl group, X1 represents a single bond etc., Y1 represents a C1-C36 aliphatic hydrocarbon group etc., A1 and A2 independently each represents a C1-C20 aliphatic hydrocarbon group etc., Ar1 represents a (m4+1)-valent C6-C20 aromatic hydrocarbon group which can have one or more substituents, B1 represents a single bond etc., m1 and m2 independently each represents an integer of 0 to 2, m3 represents an integer of 1 to 3, with the proviso that m1 plus m2 plus m3 equals 3, and m4 represents an integer of 1 to 3, and a photoresist composition comprising the salt represented by the formula (I-AA) and a resin comprising a structural unit having an acid-labile group and being insoluble or poorly soluble in an aqueous alkali solution but becoming soluble in an aqueous alkali solution by the action of an acid.
摘要:
A resist composition includes (A) a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid, (B) an acid generator having a structure to be cleaved by the action of an alkaline developer, and (C) a compound represented by the formula (I), wherein R1 and R2 in each occurrence independently represent a C1 to C12 hydrocarbon group, a C1 to C6 alkoxyl group, a C2 to C7 acyl group, a C2 to C7 acyloxy group, a C2 to C7 alkoxycarbonyl group, a nitro group or a halogen atom; m and n independently represent an integer of 0 to 4.
摘要:
A photoresist composition which comprises a salt represented by formula (I): wherein Q1 and Q2 each independently represent a fluorine atom or a C1-C6 perfluoroalkyl group, R1, R2 and R3 each independently represent a hydrogen atom or a C1-C10 monovalent aliphatic saturated hydrocarbon group, X1 and X2 each independently represent a single bond, a carbonyl group, or a C1-C10 divalent aliphatic saturated hydrocarbon group where a hydrogen atom can be replaced by a hydroxy group and where a methylene group can be replaced by an oxygen atom, a sulfonyl group or a carbonyl group, A1 represents a C1-C30 organic group, m1 represents an integer of 1 to 4, and Z+ represents an organic cation, and a resin which is hardly soluble or insoluble but soluble in an aqueous alkali solution by action of an acid.
摘要:
A resist composition having; a resin having a structural unit represented by the formula (I), a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid and not including the structural unit represented by the formula (I), an acid generator, and a salt having an anion represented by the formula (IA). wherein R1, A1, A13, X12, A14, R1A and R2A are defined in the specification.
摘要:
A salt represented by the formula (I-AA): wherein Q1 and Q2 each independently represent a fluorine atom or a C1-C4 perfluoroalkyl group, X1 represents a single bond etc., Y1 represents a C1-C36 aliphatic hydrocarbon group etc., A1 and A2 independently each represents a C1-C20 aliphatic hydrocarbon group etc., Ar1 represents a (m4+1)-valent C6-C20 aromatic hydrocarbon group which can have one or more substituents, B1 represents a single bond etc., m1 and m2 independently each represents an integer of 0 to 2, m3 represents an integer of 1 to 3, with the proviso that m1 plus m2 plus m3 equals 3, and m4 represents an integer of 1 to 3, and a photoresist composition comprising the salt represented by the formula (I-AA) and a resin comprising a structural unit having an acid-labile group and being insoluble or poorly soluble in an aqueous alkali solution but becoming soluble in an aqueous alkali solution by the action of an acid.