公开(公告)号：US20130168141A1

公开(公告)日：2013-07-04

申请号：US13820758

申请日：2012-01-24

申请人： Junichi Hozumi ,  Takumi Taura ,  Shin Okumura ,  Tomohiro Nakatani ,  Ryo Tomoida

发明人： Junichi Hozumi ,  Takumi Taura ,  Shin Okumura ,  Tomohiro Nakatani ,  Ryo Tomoida

IPC分类号： H01L21/762 ,  H05K1/03

CPC分类号： H01L21/76251 ,  B81C1/00095 ,  B81C1/00301 ,  C03C15/00 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0834 ,  H01L21/486 ,  H01L23/057 ,  H01L23/10 ,  H01L23/15 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2924/1461 ,  H05K1/0306 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for producing a substrate with through-electrode includes the steps of: forming recesses or through-holes in either one of a silicon substrate and a glass substrate; forming protrusions in the other substrate; laying the silicon substrate and glass substrate on each other so that the protrusions are inserted in the respective recesses or through-holes; and bonding the silicon substrate and the glass substrate to each other.

摘要翻译： 用于制造具有贯通电极的基板的方法包括以下步骤：在硅基板和玻璃基板中的任一个中形成凹部或通孔; 在另一基板上形成突起; 将硅基板和玻璃基板彼此铺设，使得突起插入相应的凹部或通孔中; 并将硅衬底和玻璃衬底彼此接合。