公开(公告)号：US08147295B2

公开(公告)日：2012-04-03

申请号：US12472480

申请日：2009-05-27

Applicant: Takeo Katoh ,  Ryuichi Tanimoto ,  Shinichi Ogata ,  Takeru Takushima ,  Kazushige Takaishi

Inventor： Takeo Katoh ,  Ryuichi Tanimoto ,  Shinichi Ogata ,  Takeru Takushima ,  Kazushige Takaishi

IPC: B24B1/00

CPC classification number: H01L21/02024

Abstract: A silicon wafer is polished by applying a polishing solution substantially containing no abrasive grain onto a surface of a polishing pad having a given fixed grain bonded abrasive and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon wafer, wherein a hydroplane layer is formed by the polishing solution supplied between the surface of the silicon wafer and the surface of the polishing pad and a thickness of the hydroplane layer is controlled to change a polishing state of the surface of the silicon wafer.

Abstract translation: 通过将基本上不含磨粒的抛光液施加到具有给定的固定颗粒粘结研磨剂的抛光垫的表面上，然后将抛光垫相对滑动到硅晶片以抛光硅晶片的表面来抛光硅晶片，其中 通过提供在硅晶片的表面和抛光垫的表面之间的抛光溶液形成水平面层，并且控制水平面层的厚度以改变硅晶片的表面的抛光状态。

公开(公告)号：US08066896B2

公开(公告)日：2011-11-29

申请号：US11893538

申请日：2007-08-15

Applicant: Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

Inventor： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

IPC: B44C1/22

CPC classification number: H01L21/6708 ,  H01L21/67075 ,  Y10S134/902

Abstract: An apparatus for etching a wafer by a single-wafer process comprises a fluid supplying device which feeds an etching fluid on a wafer, and a wafer-chuck for horizontally holding the wafer. The wafer-chuck is equipped with a gas injection device for injecting a gas to the wafer, a first fluid-aspirating device, and a second fluid-aspirating device. The etching fluid supplied on the wafer is spread by a rotation of the wafer. The etching fluid is scattered by a centrifugal force, or flows down over an edge portion of the wafer and is blown-off by the gas injected from the gas injection unit, and is aspirated by the first fluid-aspirating device or the second fluid-aspirating device.

Abstract translation: 用于通过单晶片工艺蚀刻晶片的设备包括：向晶片上供给蚀刻流体的流体供应装置和用于水平保持晶片的晶片卡盘。 晶片卡盘配备有用于向晶片注入气体的气体注入装置，第一流体抽吸装置和第二流体抽吸装置。 提供在晶片上的蚀刻流体通过晶片的旋转而扩展。 蚀刻流体通过离心力而被散射，或者向下流过晶片的边缘部分，并且被从气体注入单元注入的气体吹出，并且被第一流体抽吸装置或第二流体吸入装置抽吸， 吸气装置

公开(公告)号：US20100151597A1

公开(公告)日：2010-06-17

申请号：US12161070

申请日：2007-01-17

Applicant: Takeo Katoh ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Sakae Koyata ,  Kazushige Takaishi

Inventor： Takeo Katoh ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Sakae Koyata ,  Kazushige Takaishi

IPC: H01L21/306 ,  C23F1/08

CPC classification number: H01L21/30604 ,  H01L21/02019 ,  H01L21/6708

Abstract: Disclosed is a method for smoothing the surface of at least one side of a wafer which is obtained by slicing a semiconductor ingot. In this method, a fluid is applied according to projections of the wafer surface, thereby reducing the projections. Alternatively, a fluid is applied over the wafer surface, thereby smoothing the entire surface of the wafer while reducing the projections in the wafer surface.

Abstract translation: 公开了一种通过切割半导体晶锭获得的晶片的至少一侧的表面的平滑化方法。 在该方法中，根据晶片表面的突起施加流体，从而减少突起。 或者，将流体施加在晶片表面上，从而使晶片的整个表面平滑，同时减少晶片表面中的突起。

公开(公告)号：US20090298394A1

公开(公告)日：2009-12-03

申请号：US12472480

申请日：2009-05-27

Applicant: Takeo Katoh ,  Ryuichi Tanimoto ,  Shinichi Ogata ,  Takeru Takushima ,  Kazushige Takaishi

Inventor： Takeo Katoh ,  Ryuichi Tanimoto ,  Shinichi Ogata ,  Takeru Takushima ,  Kazushige Takaishi

IPC: B24B1/00

CPC classification number: H01L21/02024

Abstract: A silicon wafer is polished by applying a polishing solution substantially containing no abrasive grain onto a surface of a polishing pad having a given fixed grain bonded abrasive and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon wafer, wherein a hydroplane layer is formed by the polishing solution supplied between the surface of the silicon wafer and the surface of the polishing pad and a thickness of the hydroplane layer is controlled to change a polishing state of the surface of the silicon wafer.

Abstract translation: 通过将基本上不含磨粒的抛光液施加到具有给定的固定颗粒粘结研磨剂的抛光垫的表面上，然后将抛光垫相对滑动到硅晶片以抛光硅晶片的表面来抛光硅晶片，其中 通过提供在硅晶片的表面和抛光垫的表面之间的抛光溶液形成水平面层，并且控制水平面层的厚度以改变硅晶片的表面的抛光状态。

公开(公告)号：US20070042567A1

公开(公告)日：2007-02-22

申请号：US11504969

申请日：2006-08-15

Applicant: Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

Inventor： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

IPC: H01L21/30 ,  H01L21/46

CPC classification number: H01L21/6708 ,  H01L21/02019 ,  H01L21/30604

Abstract: A process for producing a silicon wafer comprising a single-wafer etching step of performing an etching by supplying an etching solution through a supplying-nozzle to a surface of a single and a thin-discal wafer obtained by slicing a silicon single crystal ingot and rotating the wafer to spread the etching solution over all the surface of the wafer; and a grinding step of grinding the surface of the wafer, in this order, wherein the etching solution used in the single-wafer etching step is an aqueous acid solution which contains hydrogen fluoride, nitric acid, and phosphoric acid in an amount such that the content of which by weight % at a mixing rate of fluoric acid: nitric acid: phosphoric acid is 0.5 to 40%: 5 to 50%: 5 to 70%, respectively.

Abstract translation: 1.一种硅晶片的制造方法，其特征在于，具有通过将供给喷嘴供给蚀刻液的蚀刻液进行蚀刻的单晶片蚀刻工序，所述蚀刻液通过将硅单晶锭切片而得到的单晶片和薄片晶片的表面旋转， 晶片将蚀刻溶液铺展在晶片的所有表面上; 以及按照该顺序研磨晶片的表面的研磨步骤，其中在单晶片蚀刻步骤中使用的蚀刻溶液是含有氟化氢，硝酸和磷酸的酸性水溶液，其含量使得 其含量以氟酸：硝酸：磷酸的混合比例为0.5〜40％：5〜50％：5〜70％。

公开(公告)号：US08379196B2

公开(公告)日：2013-02-19

申请号：US12792148

申请日：2010-06-02

Applicant: Eiji Kamiyama ,  Takashi Nakayama ,  Takeo Katoh

Inventor： Eiji Kamiyama ,  Takashi Nakayama ,  Takeo Katoh

IPC: G01N21/00

CPC classification number: G01N21/9501

Abstract: A semiconductor wafer whose number of LPDs per wafer is equal to or smaller than a predetermined number is sorted out, and a judgment as to whether a semiconductor wafer is a non-defective wafer is made visually based on a haze map of the semiconductor wafer subjected to the sorting. Moreover, a semiconductor wafer whose number of LPDs per wafer is equal to or smaller than a predetermined number is sorted out. Then, from the semiconductor wafers subjected to the sorting, a semiconductor wafer whose in-plane standard deviation and in-plane average value of the haze signals in a wafer plane have a specific relationship is sorted out, and this semiconductor wafer is judged to be a non-defective wafer. In this way, a method for judging whether a semiconductor wafer is a non-defective wafer or a defective wafer, the method that can make a judgment more uniform and accurate without dependence on the difference in the S/N ratio between inspection apparatuses using a laser scattering method, is provided.

Abstract translation: 对每个晶片的LPD的数量等于或小于预定数量的半导体晶片进行整理，并且根据半导体晶片的雾度图来视觉地判断半导体晶片是否为非缺陷晶片 到排序。 此外，整理出每个晶片的LPD的数量等于或小于预定数量的半导体晶片。 然后，从进行分选的半导体晶片中，将晶片面内的雾度信号的面内标准偏差和面内平均值具有特定关系的半导体晶片整理出来，将该半导体晶片判定为 无缺陷晶片。 以这种方式，用于判断半导体晶片是否为缺陷晶片或缺陷晶片的方法，可以使得判断更均匀和准确而不依赖于使用a的检查装置之间的S / N比的差异的方法 提供激光散射法。

公开(公告)号：US20100309461A1

公开(公告)日：2010-12-09

申请号：US12792148

申请日：2010-06-02

Applicant: Eiji Kamiyama ,  Takashi Nakayama ,  Takeo Katoh

Inventor： Eiji Kamiyama ,  Takashi Nakayama ,  Takeo Katoh

IPC: G01N21/00

CPC classification number: G01N21/9501

Abstract: A semiconductor wafer whose number of LPDs per wafer is equal to or smaller than a predetermined number is sorted out, and a judgment as to whether a semiconductor wafer is a non-defective wafer is made visually based on a haze map of the semiconductor wafer subjected to the sorting. Moreover, a semiconductor wafer whose number of LPDs per wafer is equal to or smaller than a predetermined number is sorted out. Then, from the semiconductor wafers subjected to the sorting, a semiconductor wafer whose in-plane standard deviation and in-plane average value of the haze signals in a wafer plane have a specific relationship is sorted out, and this semiconductor wafer is judged to be a non-defective wafer. In this way, a method for judging whether a semiconductor wafer is a non-defective wafer or a defective wafer, the method that can make a judgment more uniform and accurate without dependence on the difference in the S/N ratio between inspection apparatuses using a laser scattering method, is provided.

Abstract translation: 对每个晶片的LPD的数量等于或小于预定数量的半导体晶片进行整理，并且根据半导体晶片的雾度图来视觉地判断半导体晶片是否为非缺陷晶片 到排序。 此外，整理出每个晶片的LPD的数量等于或小于预定数量的半导体晶片。 然后，从进行分选的半导体晶片中，将晶片面内的雾度信号的面内标准偏差和面内平均值具有特定关系的半导体晶片整理出来，将该半导体晶片判定为 无缺陷晶片。 以这种方式，用于判断半导体晶片是否为缺陷晶片或缺陷晶片的方法，可以使得判断更均匀和准确而不依赖于使用a的检查装置之间的S / N比的差异的方法 提供激光散射法。

公开(公告)号：US20090294918A1

公开(公告)日：2009-12-03

申请号：US12475769

申请日：2009-06-01

Applicant: Takeo KATOH ,  Kazushige TAKAISHI

Inventor： Takeo KATOH ,  Kazushige TAKAISHI

IPC: H01L23/28

CPC classification number: H01L21/02005

Abstract: In a state where a semiconductor wafer is not acted upon by its own weight, a shear stress on a rear surface side portion of the semiconductor wafer is higher than that on a front surface side portion of the semiconductor wafer, in a compression direction. Thereby, sag of the semiconductor wafer is reduced when the semiconductor wafer is simple-supported in a horizontal state.

Abstract translation: 在半导体晶片不通过其自重的状态下，半导体晶片的背面侧部分的压应力比压电方向的半导体晶片的表面侧部分的剪应力高。 因此，当半导体晶片在水平状态下简单支撑时，半导体晶片的下垂减小。

公开(公告)号：US07601644B2

公开(公告)日：2009-10-13

申请号：US11597169

申请日：2005-09-02

Applicant: Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

Inventor： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

IPC: H01L21/311

CPC classification number: B24B37/042 ,  H01L21/02019 ,  H01L21/30604

Abstract: This silicon wafer production process comprises in the order indicated a planarization step, in which the front surface and the rear surface of a wafer are ground or lapped, a single-wafer acid etching step, in which an acid etching liquid is supplied to the surface of the wafer while spinning and the entire wafer surface is etched to control the surface roughness Ra to 0.20 μm or less, and a double-sided simultaneous polishing step, in which the front surface and the rear surface of the acid etched wafer are polished simultaneously. The process may comprise a single-sided polishing step, in which the top and bottom of the acid etched wafer are polished in turn, instead of the double-sided simultaneously polishing step.

Abstract translation: 该硅晶片制造方法按照顺序包括将晶片的前表面和后表面研磨或研磨的平坦化步骤，单晶片酸蚀刻步骤，其中将酸蚀刻液体供应到表面 并且整个晶片表面被蚀刻以将表面粗糙度Ra控制到0.20μm或更小，以及双面同时抛光步骤，其中酸蚀刻晶片的前表面和后表面被同时抛光 。 该方法可以包括单面抛光步骤，其中依次抛光酸蚀晶片的顶部和底部，而不是双面同时抛光步骤。

公开(公告)号：US20090181546A1

公开(公告)日：2009-07-16

申请号：US12059408

申请日：2008-03-31

Applicant: Takeo KATOH ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Sakae Koyata ,  Kazushige Takaishi

Inventor： Takeo KATOH ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Sakae Koyata ,  Kazushige Takaishi

IPC: H01L21/306

CPC classification number: H01L21/68735 ,  H01L21/67063 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67259

Abstract: A single-wafer etching apparatus according to the present invention supplies an etchant to an upper surface of a wafer while rotating the wafer, thereby etching the upper surface of the wafer. Further, wafer elevating means moves up and down the wafer, and a lower surface blow mechanism which blows off the etchant flowing down on an edge surface of the wafer toward a radially outer side of the wafer by injection of a gas is fixed and provided without rotating together with the wafer. Furthermore, gap adjusting means controls the wafer elevating means based on detection outputs from gap detecting means for detecting a gap between the wafer and the lower surface blow mechanism, thereby adjusting the gap. The apparatus according to the present invention uniformly etches the edge portion without collapsing a chamfered shape of the edge portion of the wafer, and prevents a glitter from being produced on the edge surface of the wafer.

Abstract translation: 根据本发明的单晶片蚀刻装置在旋转晶片的同时向晶片的上表面提供蚀刻剂，从而蚀刻晶片的上表面。 此外，晶片升降装置上下移动晶片，并且通过注入气体将沿着晶片的边缘表​​面向下流动的蚀刻剂朝向晶片的径向外侧吹出的下表面吹风机构被固定并且没有 与晶片一起旋转。 此外，间隙调整装置基于来自间隙检测装置的检测输出来控制晶片升降装置，用于检测晶片和下表面吹风机构之间的间隙，从而调整间隙。 根据本发明的装置均匀地蚀刻边缘部分而不会塌陷晶片的边缘部分的倒角形状，并且防止在晶片的边缘表​​面上产生闪光。