Invention Grant
US08379196B2 Method for judging whether semiconductor wafer is non-defective wafer by using laser scattering method
有权
通过使用激光散射法判断半导体晶片是否为缺陷晶片的方法
- Patent Title: Method for judging whether semiconductor wafer is non-defective wafer by using laser scattering method
- Patent Title (中): 通过使用激光散射法判断半导体晶片是否为缺陷晶片的方法
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Application No.: US12792148Application Date: 2010-06-02
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Publication No.: US08379196B2Publication Date: 2013-02-19
- Inventor: Eiji Kamiyama , Takashi Nakayama , Takeo Katoh
- Applicant: Eiji Kamiyama , Takashi Nakayama , Takeo Katoh
- Applicant Address: JP Tokyo
- Assignee: Sumco Corporation
- Current Assignee: Sumco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2009-137105 20090608
- Main IPC: G01N21/00
- IPC: G01N21/00

Abstract:
A semiconductor wafer whose number of LPDs per wafer is equal to or smaller than a predetermined number is sorted out, and a judgment as to whether a semiconductor wafer is a non-defective wafer is made visually based on a haze map of the semiconductor wafer subjected to the sorting. Moreover, a semiconductor wafer whose number of LPDs per wafer is equal to or smaller than a predetermined number is sorted out. Then, from the semiconductor wafers subjected to the sorting, a semiconductor wafer whose in-plane standard deviation and in-plane average value of the haze signals in a wafer plane have a specific relationship is sorted out, and this semiconductor wafer is judged to be a non-defective wafer. In this way, a method for judging whether a semiconductor wafer is a non-defective wafer or a defective wafer, the method that can make a judgment more uniform and accurate without dependence on the difference in the S/N ratio between inspection apparatuses using a laser scattering method, is provided.
Public/Granted literature
- US20100309461A1 METHOD FOR JUDGING WHETHER SEMICONDUCTOR WAFER IS NON-DEFECTIVE WAFER BY USING LASER SCATTERING METHOD Public/Granted day:2010-12-09
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