公开(公告)号：US06599830B2

公开(公告)日：2003-07-29

申请号：US10187998

申请日：2002-07-03

申请人： Takeshi Furusawa ,  Takao Kumihashi ,  Shuntaro Machida

发明人： Takeshi Furusawa ,  Takao Kumihashi ,  Shuntaro Machida

IPC分类号： H01L214763

CPC分类号： H01L21/76832 ,  H01L21/02126 ,  H01L21/02282 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3122 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76811 ,  H01L21/76813 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： To provide a method for manufacturing a semiconductor device, by which it is possible to form a trench or a hole with high aspect ratio on a methylsiloxane type film with low dielectric constant with causing neither via-connection failure nor short-circuit failure even when lower level interconnect is covered with etching stopper. The method comprises the processes of forming a layered film with a silicon oxide film on upper layer of a methylsiloxane type film and forming the layered film using a hard mask. When the etching stopper is etched, the silicon oxide film acts as a hard mask for the methylsiloxane type film, and transfer of faceting to the methylsiloxane type film is prevented. Thus, parasitic capacitance of multi-level interconnect can be reduced without causing via-connection failure and short failure.

公开(公告)号：US5474650A

公开(公告)日：1995-12-12

申请号：US301388

申请日：1994-09-07

申请人： Takao Kumihashi ,  Kazunori Tsujimoto ,  Shinichi Tachi

发明人： Takao Kumihashi ,  Kazunori Tsujimoto ,  Shinichi Tachi

IPC分类号： H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00

CPC分类号： H01L21/02071 ,  H01J37/32082 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01J37/32935 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137 ,  H01J2237/3322 ,  H01J2237/334 ,  H01J2237/3343 ,  Y10S438/914

摘要： A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameters for controlling the first and second conditions are contemplated.

公开(公告)号：US5409562A

公开(公告)日：1995-04-25

申请号：US922480

申请日：1992-07-31

申请人： Takao Kumihashi ,  Kazunori Tsujimoto ,  Shinichi Tachi

发明人： Takao Kumihashi ,  Kazunori Tsujimoto ,  Shinichi Tachi

IPC分类号： C23F4/00 ,  G03F7/36 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/00

CPC分类号： H01L21/31144 ,  G03F7/36 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/32136 ,  H01L21/32139 ,  H01J2237/3341

摘要： In microwave dry etching, the substrate/resist etching selectivity is controlled by adding a material, such as an additional gas, to the reaction gas plasma that heats the substrate with greater energy transfer efficiency than the resist. For example, a W substrate having a resist is etched with an SF.sub.6 reaction gas to which is added an Xe gas for generating incident ions that impinge the substrate with greater energy transfer than they do the resist. This produces a greater hot spot temperature for the substrate as compared with the resist to increase the substrate/resist etching selectivity. The hot spot temperature difference can be further effected by applying a bias potential to the substrate during the etching with an RF power supply.

摘要翻译： 在微波干蚀刻中，通过向反应气体等离子体中添加诸如附加气体的材料来控制衬底/抗蚀剂蚀刻选择性，所述反应气体等离子体以比抗蚀剂更高的能量转移效率加热衬底。 例如，用SF6反应气体蚀刻具有抗蚀剂的W衬底，向其中添加Xe气体，用于产生入射离子，该入射离子以比抗蚀剂更大的能量转移来冲击衬底。 与抗蚀剂相比，与基板/抗蚀剂蚀刻选择性增加相比，这对于基板产生更大的热点温度。 通过在利用RF电源的蚀刻期间向衬底施加偏置电位可以进一步实现热点温度差。

公开(公告)号：US06562722B2

公开(公告)日：2003-05-13

申请号：US10024580

申请日：2001-12-21

申请人： Takao Kumihashi ,  Kazunori Tsujimoto ,  Shinichi Tachi

发明人： Takao Kumihashi ,  Kazunori Tsujimoto ,  Shinichi Tachi

IPC分类号： H01L2100

CPC分类号： H01J37/32449 ,  H01J37/32082 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32834 ,  H01J37/32935 ,  H01J2237/3322 ,  H01J2237/334 ,  H01J2237/3343 ,  H01L21/02071 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137

摘要： A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameters for controlling the first and second conditions are contemplated.

公开(公告)号：US5795832A

公开(公告)日：1998-08-18

申请号：US861600

申请日：1997-05-22

申请人： Takao Kumihashi ,  Kazunori Tsujimoto ,  Shinichi Tachi

发明人： Takao Kumihashi ,  Kazunori Tsujimoto ,  Shinichi Tachi

IPC分类号： H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/00

CPC分类号： H01L21/02071 ,  H01J37/32082 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01J37/32935 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137 ,  H01J2237/3322 ,  H01J2237/334 ,  H01J2237/3343 ,  Y10S438/914

摘要： A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameters for controlling the first and second conditions are contemplated.

公开(公告)号：US5650038A

公开(公告)日：1997-07-22

申请号：US570689

申请日：1995-12-11

申请人： Takao Kumihashi ,  Kazunori Tsujimoto ,  Shinichi Tachi

发明人： Takao Kumihashi ,  Kazunori Tsujimoto ,  Shinichi Tachi

IPC分类号： H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/00

CPC分类号： H01L21/02071 ,  H01J37/32082 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01J37/32935 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137 ,  H01J2237/3322 ,  H01J2237/334 ,  H01J2237/3343 ,  Y10S438/914

摘要： A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameters for controlling the first and second conditions are contemplated.

摘要翻译： 用于干蚀刻的方法和装置改变真空室的有效泵送速度和气体流速中的至少一个，以改变样品在第一和第二条件之间的蚀刻图案侧壁​​的处理。 第一和第二条件包括存在或不存在沉积膜，或锥角的存在，不存在或形状。 考虑了用于控制第一和第二条件的各种参数。

公开(公告)号：US07071114B2

公开(公告)日：2006-07-04

申请号：US10402949

申请日：2003-04-01

申请人： Takao Kumihashi ,  Kazunori Tsujimoto ,  Shinichi Tachi

发明人： Takao Kumihashi ,  Kazunori Tsujimoto ,  Shinichi Tachi

IPC分类号： H01L21/302

CPC分类号： H01J37/32449 ,  H01J37/32082 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32834 ,  H01J37/32935 ,  H01J2237/3322 ,  H01J2237/334 ,  H01J2237/3343 ,  H01L21/02071 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137

摘要： A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameters for controlling the first and second conditions are contemplated.

公开(公告)号：US6008133A

公开(公告)日：1999-12-28

申请号：US63406

申请日：1998-04-21

申请人： Takao Kumihashi ,  Kazunori Tsujimoto ,  Shinichi Tachi

发明人： Takao Kumihashi ,  Kazunori Tsujimoto ,  Shinichi Tachi

IPC分类号： H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/00 ,  B44C1/22 ,  C23F1/02

CPC分类号： H01J37/32449 ,  H01J37/32082 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32834 ,  H01J37/32935 ,  H01L21/02071 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137 ,  H01J2237/3322 ,  H01J2237/334 ,  H01J2237/3343

摘要： A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameters for controlling the first and second conditions are contemplated.

公开(公告)号：US5368685A

公开(公告)日：1994-11-29

申请号：US36394

申请日：1993-03-24

申请人： Takao Kumihashi ,  Kazunori Tsujimoto ,  Shinichi Tachi

发明人： Takao Kumihashi ,  Kazunori Tsujimoto ,  Shinichi Tachi

IPC分类号： H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/306 ,  B44C1/22

CPC分类号： H01L21/02071 ,  H01J37/32082 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137

摘要： At an effective exhaust speed of 1200 liter/s, high frequency power with power surface density of 4.5 W/cm.sup.2 is made to discharge high density plasma, thereby carrying out dry etching. With a gas residence time of 100 ms or less, a gas flow rate controller is provided which has a response time substantially equal to the gas residence time. Etching can be performed at high speed with deposit reaction restrained and high ion current density. Because of the enhanced ion current density, etching providing high selectivity can be made with lowered ion energy. The time required for gas exchange in time modulation etching, multi-step etching and attachment/removal of electrostatic adsorption can be shortened to improve the etching throughput.

摘要翻译： 在1200升/秒的有效排气速度下，使功率表面密度为4.5W / cm2的高频功率排出高密度等离子体，从而进行干蚀刻。 在气体停留时间为100ms以下的情况下，设置有气体流量控制器，其响应时间基本上等于气体停留时间。 可以高速地进行蚀刻，抑制沉积反应和高离子电流密度。 由于增强的离子电流密度，可以用降低的离子能量进行提供高选择性的蚀刻。 可以缩短时间调制蚀刻，多步骤蚀刻和附着/去除静电吸附所需的时间，以提高蚀刻生产率。

公开(公告)号：US5354418A

公开(公告)日：1994-10-11

申请号：US176461

申请日：1994-01-03

申请人： Takao Kumihashi ,  Kazunori Tsujimoto ,  Shinichi Tachi

发明人： Takao Kumihashi ,  Kazunori Tsujimoto ,  Shinichi Tachi

IPC分类号： H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C23F1/00

CPC分类号： H01L21/3065 ,  H01J37/32082 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/02071 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137 ,  H01J2237/3322 ,  H01J2237/334 ,  H01J2237/3343 ,  Y10S438/913 ,  Y10S438/978

摘要： A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameter for controlling the first and second conditions are contemplated.

摘要翻译： 用于干蚀刻的方法和装置改变真空室的有效泵送速度和气体流速中的至少一个，以改变样品在第一和第二条件之间的蚀刻图案侧壁​​的处理。 第一和第二条件包括存在或不存在沉积膜，或锥角的存在，不存在或形状。 考虑了用于控制第一和第二条件的各种参数。