Flip-chip type semiconductor light-emitting device, method for manufacturing flip-chip type semiconductor light-emitting device, printed circuit board for flip-chip type semiconductor light-emitting device, mounting structure for flip-chip type semiconductor light-emitting device, and light-emitting diode lamp
    1.
    发明授权
    Flip-chip type semiconductor light-emitting device, method for manufacturing flip-chip type semiconductor light-emitting device, printed circuit board for flip-chip type semiconductor light-emitting device, mounting structure for flip-chip type semiconductor light-emitting device, and light-emitting diode lamp 有权
    倒装芯片型半导体发光器件,倒装芯片型半导体发光器件的制造方法,倒装芯片型半导体发光器件的印刷电路板,倒装芯片型半导体发光器件的安装结构, 和发光二极管灯

    公开(公告)号:US08022419B2

    公开(公告)日:2011-09-20

    申请号:US12095480

    申请日:2006-12-19

    IPC分类号: H01L33/00

    摘要: A flip-chip type semiconductor light-emitting device having a positive electrode and a negative electrode similar in electrode area and capable of preventing the misalignment of the light-emitting device by utilizing the self alignment effect in manufacturing a light-emitting diode lamp and a printed circuit board for the flip-chip type semiconductor light-emitting device are provided. Furthermore, adopted are a flip-chip type semiconductor light-emitting device 1 which is provided with a negative electrode pad and a positive electrode pad formed on the side opposite the transparent substrate side of the semiconductor layer, wherein each of the electrode pads is formed in the same shape as each other and a printed circuit board for the light-emitting device has a pair of the electrode patterns which are formed in the same shape as each other. Still furthermore, a soldering film is included in each of the electrode pads.

    摘要翻译: 一种倒装芯片型半导体发光器件,其具有在电极区域中类似的正极和负极,并且能够通过利用发光二极管灯的制造中的自对准效应来防止发光元件的未对准 提供了用于倒装芯片型半导体发光器件的印刷电路板。 此外,采用倒装芯片型半导体发光器件1,该半导体发光器件1设置有在半导体层的与透明衬底侧相对的一侧上形成的负极焊盘和正电极焊盘,其中形成每个电极焊盘 彼此相同的形状,并且用于发光器件的印刷电路板具有彼此形成为相同形状的一对电极图案。 此外,在每个电极焊盘中包括焊接膜。

    Light-emitting diode package and lead group structure for light-emitting diode package
    2.
    发明授权
    Light-emitting diode package and lead group structure for light-emitting diode package 失效
    发光二极管封装和引线组结构用于发光二极管封装

    公开(公告)号:US07875899B2

    公开(公告)日:2011-01-25

    申请号:US12302669

    申请日:2008-01-07

    申请人: Takaki Yasuda

    发明人: Takaki Yasuda

    摘要: A light-emitting diode package 1 of the present invention is a light-emitting diode package including: a diode group 2D made of a plurality of light-emitting diode chips 2 connected in series and a lead group 3 connected to the diode group 2D, in which the lead group 3 includes: a pair of external leads 31 and 32 as terminals of the diode group 2D and auxiliary leads 33 the number of which is one less than that of the light-emitting diode chips 2, in which the plurality of the light-emitting diode chips 2 are arranged in one line on a first external lead 31 of the pair of external leads 31 and 32, in which the auxiliary leads 33 are arranged on one or both sides of a row made of the plurality of light-emitting diode chips 2, and in which the adjacent light-emitting diode chips 2 of the plurality of light-emitting diode chips 2 are connected in series via the auxiliary leads 33.

    摘要翻译: 本发明的发光二极管封装1是发光二极管封装,其包括:由串联连接的多个发光二极管芯片2和与二极管组2D连接的引线组3构成的二极管组2D, 其中引线组3包括:作为二极管组2D的端子的一对外部引线31和32以及其数量比发光二极管芯片2的数量少一个的辅助引线33,其中多个 发光二极管芯片2以一行布置在一对外部引线31和32的第一外部引线31上,其中辅助引线33布置在由多个光制成的行的一侧或两侧 并且其中多个发光二极管芯片2的相邻发光二极管芯片2经由辅助引线33串联连接。

    LIGHT EMITTING DEVICE AND METHOD FOR DRIVING LIGHT EMITTING DEVICE
    3.
    发明申请
    LIGHT EMITTING DEVICE AND METHOD FOR DRIVING LIGHT EMITTING DEVICE 失效
    发光装置及驱动发光装置的方法

    公开(公告)号:US20100066258A1

    公开(公告)日:2010-03-18

    申请号:US12515478

    申请日:2008-01-07

    申请人: Takaki Yasuda

    发明人: Takaki Yasuda

    IPC分类号: H05B37/00

    摘要: A light emitting device which can emit light of an arbitrary color temperature and a process for producing a light emitting device which can emit light of an arbitrary color temperature are provided. Such a light emitting device includes a first light emitting diode device 2 and a second light emitting diode device 3 which are connected together in parallel, and a power-supply apparatus 4 which is capable of reversing polarity, in which the color temperature of the first light emitting diode device 2 is set to be higher than the color temperature of the second light emitting diode device 3.

    摘要翻译: 提供了能够发出任意色温的发光装置和能够发出任意色温的发光装置的制造方法。 这种发光器件包括并联连接在一起的第一发光二极管器件2和第二发光二极管器件3以及能够反转极性的电源设备4,其中第一 发光二极管装置2被设定为高于第二发光二极管装置3的色温。

    Light emitting device and method for driving light emitting device
    4.
    发明授权
    Light emitting device and method for driving light emitting device 失效
    发光装置及其驱动方法

    公开(公告)号:US08188670B2

    公开(公告)日:2012-05-29

    申请号:US12515478

    申请日:2008-01-07

    申请人: Takaki Yasuda

    发明人: Takaki Yasuda

    IPC分类号: H05B41/00

    摘要: A light emitting device which can emit light of an arbitrary color temperature and a process for producing a light emitting device which can emit light of an arbitrary color temperature are provided. Such a light emitting device includes a first light emitting diode device (2) and a second light emitting diode device (3) which are connected together in parallel, and a power-supply apparatus (4) which is capable of reversing polarity, in which the color temperature of the first light emitting diode device (2) is set to be higher than the color temperature of the second light emitting diode device (3).

    摘要翻译: 提供了能够发出任意色温的发光装置和能够发出任意色温的发光装置的制造方法。 这种发光器件包括并联连接在一起的第一发光二极管器件(2)和第二发光二极管器件(3),以及能够反转极性的电源设备(4),其中 第一发光二极管装置(2)的色温被设定为高于第二发光二极管装置(3)的色温。

    LIGHT-EMITTING DIODE PACKAGE AND LEAD GROUP STRUCTURE FOR LIGHT-EMITTING DIODE PACKAGE
    5.
    发明申请
    LIGHT-EMITTING DIODE PACKAGE AND LEAD GROUP STRUCTURE FOR LIGHT-EMITTING DIODE PACKAGE 失效
    用于发光二极管封装的发光二极管封装和引线组结构

    公开(公告)号:US20090236618A1

    公开(公告)日:2009-09-24

    申请号:US12302669

    申请日:2008-01-07

    申请人: Takaki Yasuda

    发明人: Takaki Yasuda

    IPC分类号: H01L33/00

    摘要: A light-emitting diode package 1 of the present invention is a light-emitting diode package including: a diode group 2D made of a plurality of light-emitting diode chips 2 connected in series and a lead group 3 connected to the diode group 2D, in which the lead group 3 includes: a pair of external leads 31 and 32 as terminals of the diode group 2D and auxiliary leads 33 the number of which is one less than that of the light-emitting diode chips 2, in which the plurality of the light-emitting diode chips 2 are arranged in one line on a first external lead 31 of the pair of external leads 31 and 32, in which the auxiliary leads 33 are arranged on one or both sides of a row made of the plurality of light-emitting diode chips 2, and in which the adjacent light-emitting diode chips 2 of the plurality of light-emitting diode chips 2 are connected in series via the auxiliary leads 33.

    摘要翻译: 本发明的发光二极管封装1是发光二极管封装,其包括:由串联连接的多个发光二极管芯片2和与二极管组2D连接的引线组3构成的二极管组2D, 其中引线组3包括:作为二极管组2D的端子的一对外部引线31和32以及其数量比发光二极管芯片2的数量少一个的辅助引线33,其中多个 发光二极管芯片2以一行布置在一对外部引线31和32的第一外部引线31上,其中辅助引线33布置在由多个光制成的行的一侧或两侧 并且其中多个发光二极管芯片2的相邻发光二极管芯片2经由辅助引线33串联连接。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    7.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号:US20090045423A1

    公开(公告)日:2009-02-19

    申请号:US12159919

    申请日:2006-12-27

    IPC分类号: H01L33/00

    摘要: An object of the present invention is to provide a light-emitting device with a high output and a high efficiency by improving the efficiency for utilizing light emitted from a semiconductor light-emitting element.The inventive semiconductor light-emitting device comprises a package substrate, a sub-mount provided on the package substrate, a semiconductor light-emitting element provided on the sub-mount, and a reflector surrounding the sub-mount and the semiconductor light-emitting element, wherein the positions and sizes of the sub-mount, light-emitting element and reflector satisfy the following relationship (A) on a cross section perpendicular to the package substrate that passes through the center of the semiconductor light-emitting element, r−1s≦(hs−d)×(1s−1c)/hc  (A) wherein r, 1s and 1c are distances from the drooping portion of the reflector, from the outer circumference of the sub-mount and from the outer circumference of the semiconductor light-emitting element to the center of the semiconductor light-emitting element, respectively, hs and d are heights of the sub-mount and of the drooping portion of the reflector, respectively, and hc is a height of the upper surface of the semiconductor light-emitting element from the upper surface of the sub-mount.

    摘要翻译: 本发明的目的是通过提高利用从半导体发光元件发出的光的效率来提供具有高输出和高效率的发光装置。 本发明的半导体发光装置包括封装基板,设置在封装基板上的副安装座,设置在副安装座上的半导体发光元件以及围绕副安装座和半导体发光元件的反射器 其中,子载体,发光元件和反射体的位置和尺寸在垂直于穿过半导体发光元件的中心的封装衬底的横截面上满足以下关系式(A):< -line-formula description =“In-line Formulas”end =“lead”?> r-1s <=(hs-d)x(1s-1c)/ hc(A)<?in-line-formula description = 其中r,1s和1c是与反射器的下垂部分相距离子载体的外圆周和半导体发光元件的外圆周的距离, 半导体发光元件的中心分别为hs和d为子的高度 和反射器的下垂部分的高度,hc是半导体发光元件的上表面的高度。

    Group III Nitride Semiconductor Light Emitting Device
    8.
    发明申请
    Group III Nitride Semiconductor Light Emitting Device 审中-公开
    第III族氮化物半导体发光器件

    公开(公告)号:US20070241352A1

    公开(公告)日:2007-10-18

    申请号:US11629616

    申请日:2005-06-16

    IPC分类号: H01L33/00

    摘要: It is an object of the present invention to provide a simple and reliable method for forming a rough structure having inclined side surfaces in a light emitting device, and to provide a group III nitride semiconductor light emitting device that is obtained by the method and is excellent in light extraction efficiency. The inventive group III nitride semiconductor light emitting device comprising group III nitride semiconductor formed on a substrate comprises a first layer of Ge doped group III nitride semiconductor having pits on the surface thereof, and a second layer adjoining on the first layer and having a refractive index different from that of the first layer.

    摘要翻译: 本发明的目的是提供一种在发光器件中形成具有倾斜侧表面的粗糙结构的简单可靠的方法,并且提供通过该方法获得并且优异的III族氮化物半导体发光器件 在光提取效率。 本发明的III族氮化物半导体发光器件包括形成在衬底上的III族氮化物半导体,其包括在其表面上具有凹坑的第一层Ge掺杂的III族氮化物半导体,以及与该第一层相邻并具有折射率的第二层 与第一层不同。