摘要:
A flip-chip type semiconductor light-emitting device having a positive electrode and a negative electrode similar in electrode area and capable of preventing the misalignment of the light-emitting device by utilizing the self alignment effect in manufacturing a light-emitting diode lamp and a printed circuit board for the flip-chip type semiconductor light-emitting device are provided. Furthermore, adopted are a flip-chip type semiconductor light-emitting device 1 which is provided with a negative electrode pad and a positive electrode pad formed on the side opposite the transparent substrate side of the semiconductor layer, wherein each of the electrode pads is formed in the same shape as each other and a printed circuit board for the light-emitting device has a pair of the electrode patterns which are formed in the same shape as each other. Still furthermore, a soldering film is included in each of the electrode pads.
摘要:
A light-emitting diode package 1 of the present invention is a light-emitting diode package including: a diode group 2D made of a plurality of light-emitting diode chips 2 connected in series and a lead group 3 connected to the diode group 2D, in which the lead group 3 includes: a pair of external leads 31 and 32 as terminals of the diode group 2D and auxiliary leads 33 the number of which is one less than that of the light-emitting diode chips 2, in which the plurality of the light-emitting diode chips 2 are arranged in one line on a first external lead 31 of the pair of external leads 31 and 32, in which the auxiliary leads 33 are arranged on one or both sides of a row made of the plurality of light-emitting diode chips 2, and in which the adjacent light-emitting diode chips 2 of the plurality of light-emitting diode chips 2 are connected in series via the auxiliary leads 33.
摘要:
A light emitting device which can emit light of an arbitrary color temperature and a process for producing a light emitting device which can emit light of an arbitrary color temperature are provided. Such a light emitting device includes a first light emitting diode device 2 and a second light emitting diode device 3 which are connected together in parallel, and a power-supply apparatus 4 which is capable of reversing polarity, in which the color temperature of the first light emitting diode device 2 is set to be higher than the color temperature of the second light emitting diode device 3.
摘要:
A light emitting device which can emit light of an arbitrary color temperature and a process for producing a light emitting device which can emit light of an arbitrary color temperature are provided. Such a light emitting device includes a first light emitting diode device (2) and a second light emitting diode device (3) which are connected together in parallel, and a power-supply apparatus (4) which is capable of reversing polarity, in which the color temperature of the first light emitting diode device (2) is set to be higher than the color temperature of the second light emitting diode device (3).
摘要:
A light-emitting diode package 1 of the present invention is a light-emitting diode package including: a diode group 2D made of a plurality of light-emitting diode chips 2 connected in series and a lead group 3 connected to the diode group 2D, in which the lead group 3 includes: a pair of external leads 31 and 32 as terminals of the diode group 2D and auxiliary leads 33 the number of which is one less than that of the light-emitting diode chips 2, in which the plurality of the light-emitting diode chips 2 are arranged in one line on a first external lead 31 of the pair of external leads 31 and 32, in which the auxiliary leads 33 are arranged on one or both sides of a row made of the plurality of light-emitting diode chips 2, and in which the adjacent light-emitting diode chips 2 of the plurality of light-emitting diode chips 2 are connected in series via the auxiliary leads 33.
摘要:
A light-emitting device is provided in a light-emitting element with a bonding wire that is a fine metallic wire formed mainly of gold or copper and coated at least partly with a substance capable of heightening a reflection coefficient of a wavelength of light emitted from the light-emitting element.
摘要:
An object of the present invention is to provide a light-emitting device with a high output and a high efficiency by improving the efficiency for utilizing light emitted from a semiconductor light-emitting element.The inventive semiconductor light-emitting device comprises a package substrate, a sub-mount provided on the package substrate, a semiconductor light-emitting element provided on the sub-mount, and a reflector surrounding the sub-mount and the semiconductor light-emitting element, wherein the positions and sizes of the sub-mount, light-emitting element and reflector satisfy the following relationship (A) on a cross section perpendicular to the package substrate that passes through the center of the semiconductor light-emitting element, r−1s≦(hs−d)×(1s−1c)/hc (A) wherein r, 1s and 1c are distances from the drooping portion of the reflector, from the outer circumference of the sub-mount and from the outer circumference of the semiconductor light-emitting element to the center of the semiconductor light-emitting element, respectively, hs and d are heights of the sub-mount and of the drooping portion of the reflector, respectively, and hc is a height of the upper surface of the semiconductor light-emitting element from the upper surface of the sub-mount.
摘要:
It is an object of the present invention to provide a simple and reliable method for forming a rough structure having inclined side surfaces in a light emitting device, and to provide a group III nitride semiconductor light emitting device that is obtained by the method and is excellent in light extraction efficiency. The inventive group III nitride semiconductor light emitting device comprising group III nitride semiconductor formed on a substrate comprises a first layer of Ge doped group III nitride semiconductor having pits on the surface thereof, and a second layer adjoining on the first layer and having a refractive index different from that of the first layer.
摘要:
A semiconductor light-emitting device has a substrate (1), a semiconductor layer (3) and a light-emitting layer (5), and the substrate is furnished on the surface thereof underlying the semiconductor layer with an irregular construction possessing inclined lateral surfaces forming an angle θ to the substrate in the range of 30°
摘要:
A light-emitting device is provided in a light-emitting element with a bonding wire that is a fine metallic wire formed mainly of gold or copper and coated at least partly with a substance capable of heightening a reflection coefficient of a wavelength of light emitted from the light-emitting element.