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    Substrate with intermediate layer for thin-film magnetic head and method of manufacturing the substrate with intermediate layer
    1.
    发明授权
    Substrate with intermediate layer for thin-film magnetic head and method of manufacturing the substrate with intermediate layer 有权
    具有薄膜磁头中间层的基板和具有中间层的基板的制造方法

    公开(公告)号：US08159783B2

    公开(公告)日：2012-04-17

    申请号：US10559704

    申请日：2005-05-13

    Applicant: Taisuke Hirooka ,  Hironobu Tsubota

    Inventor： Taisuke Hirooka ,  Hironobu Tsubota

    IPC: G11B5/127

    CPC classification number: G11B5/3912

    Abstract: A thin-film magnetic head substrate according to the present invention includes: a ceramic base with a principal surface; and an undercoat film, which covers the principal surface of the ceramic base. An electrical/magnetic transducer is provided on the undercoat film. The substrate further includes an intermediate layer between the principal surface of the ceramic base and the undercoat film. The intermediate layer is made of a material other than an aluminum oxide and has been patterned so as to make a portion of the principal surface of the ceramic base contact with the undercoat film.

    Abstract translation: 根据本发明的薄膜磁头基板包括：具有主表面的陶瓷基体; 以及覆盖陶瓷基材的主表面的底涂膜。 在底涂层上设置电磁换能器。 基板还包括在陶瓷基体的主表面和底涂层之间的中间层。 中间层由氧化铝以外的材料制成，并且已经被图案化，以使陶瓷基体的主表面的一部分与底涂层接触。

    Method of manufacturing SiC single crystal wafer
    2.
    发明授权
    Method of manufacturing SiC single crystal wafer 有权
    制造SiC单晶晶片的方法

    公开(公告)号：US07641736B2

    公开(公告)日：2010-01-05

    申请号：US10545306

    申请日：2005-02-22

    Applicant: Taisuke Hirooka

    Inventor： Taisuke Hirooka

    IPC: C30B29/16

    CPC classification number: H01L21/0475 ,  C30B29/36 ,  C30B33/12 ,  Y10S438/931

    Abstract: A method of manufacturing an SiC single crystal wafer according to the present invention includes the steps of: (a) preparing an SiC single crystal wafer 10 with a mirror-polished surface; (b) oxidizing the surface of the SiC single crystal wafer 10 with plasma, thereby forming an oxide layer 12 on the surface of the SiC single crystal wafer; and (c) removing at least a portion of the oxide layer 12 by a reactive ion etching process. Preferably, the surface of the wafer is planarized by repeatedly performing the steps (b) and (c) a number of times.

    Abstract translation: 根据本发明的SiC单晶晶片的制造方法包括以下步骤：（a）制备具有镜面抛光表面的SiC单晶晶片10; （b）用等离子体氧化SiC单晶晶片10的表面，从而在SiC单晶晶片的表面上形成氧化物层12; 和（c）通过反应离子蚀刻工艺除去氧化物层12的至少一部分。 优选地，通过重复执行步骤（b）和（c）多次来平坦化晶片的表面。

    SILICON CARBIDE MONOCRYSTAL SUBSTRATE AND MANUFACTURING METHOD THEREFOR
    4.
    发明申请
    SILICON CARBIDE MONOCRYSTAL SUBSTRATE AND MANUFACTURING METHOD THEREFOR 审中-公开
    硅碳单晶基板及其制造方法

    公开(公告)号：US20110156058A1

    公开(公告)日：2011-06-30

    申请号：US13061955

    申请日：2010-02-04

    Applicant: Tsutomu Hori ,  Taisuke Hirooka

    Inventor： Tsutomu Hori ,  Taisuke Hirooka

    IPC: H01L29/24 ,  H01L21/306

    CPC classification number: B24B37/042 ,  C30B25/186 ,  C30B29/36 ,  C30B33/00 ,  H01L21/02024 ,  H01L29/1608

    Abstract: A method for producing a silicon carbide single crystal substrate according to the present invention includes steps of: (A) preparing a silicon carbide single crystal substrate having a mechanically polished main face; (B) performing chemical mechanical polishing on the main face of the silicon carbide single crystal substrate using a polishing slurry containing abrasive grains dispersed therein to finish the main face as a mirror surface; (C′1) oxidizing at least a part of the main face finished as a mirror surface by a gas phase to form an oxide; and (C′2) removing the oxide.

    Abstract translation: 本发明的碳化硅单晶基板的制造方法包括以下步骤：（A）制备具有机械抛光主面的碳化硅单晶基板; （B）使用包含分散在其中的磨粒的研磨浆料在碳化硅单晶基板的主面上进行化学机械研磨，使主面完成镜面; （C'1）通过气相氧化作为镜面完成的主面的至少一部分以形成氧化物; 和（C'2）去除氧化物。

    Method of manufacturing sic single crystal wafer
    5.
    发明申请
    Method of manufacturing sic single crystal wafer 有权
    制造单晶晶片的方法

    公开(公告)号：US20070051301A1

    公开(公告)日：2007-03-08

    申请号：US10545306

    申请日：2005-02-22

    Applicant: Taisuke Hirooka

    Inventor： Taisuke Hirooka

    IPC: C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

    CPC classification number: H01L21/0475 ,  C30B29/36 ,  C30B33/12 ,  Y10S438/931

    Abstract: A method of manufacturing an SiC single crystal wafer according to the present invention includes the steps of: (a) preparing an SiC single crystal wafer 10 with a mirror-polished surface; (b) oxidizing the surface of the SiC single crystal wafer 10 with plasma, thereby forming an oxide layer 12 on the surface of the SiC single crystal wafer; and (c) removing at least a portion of the oxide layer 12 by a reactive ion etching process. Preferably, the surface of the wafer is planarized by repeatedly performing the steps (b) and (c) a number of times.

    Abstract translation: 根据本发明的SiC单晶晶片的制造方法包括以下步骤：（a）制备具有镜面抛光表面的SiC单晶晶片10; （b）用等离子体氧化SiC单晶晶片10的表面，从而在SiC单晶晶片的表面上形成氧化物层12; 和（c）通过反应离子蚀刻工艺除去氧化物层12的至少一部分。 优选地，通过重复执行步骤（b）和（c）多次来平坦化晶片的表面。

    Method of marking sintered body and method for manufacturing magnetic head wafer
    6.
    发明授权
    Method of marking sintered body and method for manufacturing magnetic head wafer 有权
    标记烧结体的方法及制造磁头晶片的方法

    公开(公告)号：US06906895B2

    公开(公告)日：2005-06-14

    申请号：US10444133

    申请日：2003-05-23

    Applicant: Taisuke Hirooka

    Inventor： Taisuke Hirooka

    IPC: C04B41/91 ,  G11B5/10 ,  G11B5/31 ,  G11B5/60 ,  G11B5/147 ,  G01L21/30

    CPC classification number: G11B5/3173 ,  C04B35/117 ,  C04B41/009 ,  C04B41/5346 ,  C04B41/91 ,  C04B2235/3843 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/945 ,  C04B2235/963 ,  G11B5/102 ,  G11B5/3106 ,  G11B5/3166 ,  C04B35/10 ,  C04B35/5611 ,  C04B41/0054

    Abstract: A method of marking a sintered body includes the step of preparing the sintered body by sintering a mixture of first and second types of powder particles. The first type of powder particles is made of a first material and the second type of powder particles is made of a second material that has a different etch susceptibility from the first material. The method further includes the step of writing ID information on the surface of the sintered body by forming a first concave region to a depth of at least about 10 nm under the surface of the sintered body and a second concave region under the first concave region, respectively. The first concave region is formed by etching away both the first and second types of powder particles, while the second concave region is formed by etching away only the first type of powder particles.

    Abstract translation: 标记烧结体的方法包括通过烧结第一种和第二种粉末颗粒的混合物来制备烧结体的步骤。 第一种类型的粉末颗粒由第一种材料制成，第二类型的粉末颗粒由与第一种材料具有不同蚀刻敏感性的第二种材料制成。 该方法还包括通过在烧结体的表面上形成至少约10nm的深度的第一凹部区域和在第一凹部区域下方的第二凹部区域，在烧结体的表面上书写ID信息的步骤， 分别。 通过蚀刻掉第一和第二类型的粉末颗粒而形成第一凹入区域，而通过仅蚀刻掉第一类型的粉末颗粒来形成第二凹入区域。

    Thin-film magnetic head supporting structure and method for manufacturing the same
    7.
    发明授权
    Thin-film magnetic head supporting structure and method for manufacturing the same 有权
    薄膜磁头支撑结构及其制造方法

    公开(公告)号：US06301086B1

    公开(公告)日：2001-10-09

    申请号：US09433311

    申请日：1999-11-03

    Applicant: Taisuke Hirooka

    Inventor： Taisuke Hirooka

    IPC: G11B539

    CPC classification number: G11B5/3903 ,  G11B5/3103 ,  G11B5/3113

    Abstract: A thin-film magnetic head supporting structure includes: an FeAlSi alloy film; a ceramic substrate used for structural support of the FeAlSi alloy film; and an intermediate multilayer structure disposed between the FeAlSi alloy film and the ceramic substrate. The intermediate multilayer structure includes a Cr film and an Fe film, which are stacked in this order over the ceramic substrate.

    Abstract translation: 薄膜磁头支撑结构包括：FeAlSi合金膜; 用于FeAlSi合金膜结构支撑的陶瓷基体; 以及设置在FeAlSi合金膜和陶瓷基板之间的中间多层结构。 中间多层结构包括Cr膜和Fe膜，它们依次层叠在陶瓷基板上。

    Method of marking sintered body and method for manufacturing magnetic head wafer
    9.
    发明授权
    Method of marking sintered body and method for manufacturing magnetic head wafer 有权
    标记烧结体的方法及制造磁头晶片的方法

    公开(公告)号：US07187523B2

    公开(公告)日：2007-03-06

    申请号：US10979910

    申请日：2004-11-02

    Applicant: Taisuke Hirooka

    Inventor： Taisuke Hirooka

    IPC: G11B5/147 ,  G01L21/30

    CPC classification number: G11B5/3173 ,  C04B35/117 ,  C04B41/009 ,  C04B41/5346 ,  C04B41/91 ,  C04B2235/3843 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/945 ,  C04B2235/963 ,  G11B5/102 ,  G11B5/3106 ,  G11B5/3166 ,  C04B35/10 ,  C04B35/5611 ,  C04B41/0054

    Abstract: A method of marking a sintered body includes the step of preparing the sintered body by sintering a mixture of first and second types of powder particles. The first type of powder particles is made of a first material and the second type of powder particles is made of a second material that has a different etch susceptibility from the first material. The method further includes the step of writing ID information on the surface of the sintered body by forming a first concave region to a depth of at least about 10 nm under the surface of the sintered body and a second concave region under the first concave region, respectively. The first concave region is formed by etching away both the first and second types of powder particles, while the second concave region is formed by etching away only the first type of powder particles.

    Abstract translation: 标记烧结体的方法包括通过烧结第一种和第二种粉末颗粒的混合物来制备烧结体的步骤。 第一种类型的粉末颗粒由第一种材料制成，第二类型的粉末颗粒由与第一种材料具有不同蚀刻敏感性的第二种材料制成。 该方法还包括通过在烧结体的表面上形成至少约10nm的深度的第一凹部区域和在第一凹部区域下方的第二凹部区域，在烧结体的表面上书写ID信息的步骤， 分别。 通过蚀刻掉第一和第二类型的粉末颗粒而形成第一凹入区域，而通过仅蚀刻掉第一类型的粉末颗粒来形成第二凹入区域。

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