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公开(公告)号：US07892860B2
公开(公告)日：2011-02-22
申请号：US12078258
申请日：2008-03-28
申请人： Susumu Ohmi , Katsuhiko Kishimoto
发明人： Susumu Ohmi , Katsuhiko Kishimoto
IPC分类号： H01L21/00
CPC分类号： H01S5/22 , B82Y20/00 , H01L22/26 , H01S5/0014 , H01S5/0425 , H01S5/209 , H01S5/2214 , H01S5/2277 , H01S5/34306 , H01S5/3436 , H01S2301/18 , H01S2304/00
摘要： A method for forming a semiconductor laser chip is provided that can suppress layer discontinuity and simultaneously reduce fabrication variations in the light radiation angle in the horizontal direction. The method includes a step of forming, on an n-type GaAs substrate, a semiconductor element layer composed of a plurality of semiconductor layers including an etching marker layer, a step of forming, in a contact layer in the semiconductor element layer, a depressed portion having a depth not reaching the etching marker layer, and a step of forming a ridge portion by etching the semiconductor element layer by dry etching while monitoring, with laser light, the etching depth in the bottom region of the depressed portion.
摘要翻译： 提供一种形成半导体激光器芯片的方法，其可以抑制层间不连续性，同时减少水平方向上的光辐射角度的制造变化。 该方法包括在n型GaAs衬底上形成由包括蚀刻标记层的多个半导体层构成的半导体元件层，在半导体元件层的接触层中形成凹陷的步骤 具有未到达蚀刻标记层的深度的部分，以及通过干蚀刻蚀刻半导体元件层来形成脊部的步骤，同时用激光监测凹陷部分的底部区域中的蚀刻深度。
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公开(公告)号：US20080240188A1
公开(公告)日：2008-10-02
申请号：US12078258
申请日：2008-03-28
申请人： Susumu Ohmi , Katsuhiko Kishimoto
发明人： Susumu Ohmi , Katsuhiko Kishimoto
CPC分类号： H01S5/22 , B82Y20/00 , H01L22/26 , H01S5/0014 , H01S5/0425 , H01S5/209 , H01S5/2214 , H01S5/2277 , H01S5/34306 , H01S5/3436 , H01S2301/18 , H01S2304/00
摘要： A method for forming a semiconductor laser chip is provided that can suppress layer discontinuity and simultaneously reduce fabrication variations in the light radiation angle in the horizontal direction. The method includes a step of forming, on an n-type GaAs substrate, a semiconductor element layer composed of a plurality of semiconductor layers including an etching marker layer, a step of forming, in a contact layer in the semiconductor element layer, a depressed portion having a depth not reaching the etching marker layer, and a step of forming a ridge portion by etching the semiconductor element layer by dry etching while monitoring, with laser light, the etching depth in the bottom region of the depressed portion.
摘要翻译： 提供一种形成半导体激光器芯片的方法，其可以抑制层间不连续性，同时减少水平方向上的光辐射角度的制造变化。 该方法包括在n型GaAs衬底上形成由包括蚀刻标记层的多个半导体层构成的半导体元件层，在半导体元件层的接触层中形成凹陷的步骤 具有未到达蚀刻标记层的深度的部分，以及通过干蚀刻蚀刻半导体元件层来形成脊部的步骤，同时用激光监测凹陷部分的底部区域中的蚀刻深度。
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公开(公告)号：US20090323746A1
公开(公告)日：2009-12-31
申请号：US11922137
申请日：2006-04-12
申请人： Susumu Ohmi , Takeshi Kamikawa
发明人： Susumu Ohmi , Takeshi Kamikawa
CPC分类号： H01S5/0201 , B82Y20/00 , H01S5/0202 , H01S5/0425 , H01S5/22 , H01S5/34333
摘要： In one embodiment of the present invention, in a method of fabricating a nitride semiconductor laser device, after an insulating film is formed on a layered nitride semiconductor portion on a substrate, a resist mask is formed on the insulating film, such that the insulating film is exposed near a position where an exit-side cleaved facet and a reflection-side cleaved facet are formed. The insulating film near a position where the exit-side cleaved facet and the reflection-side cleaved facet are formed is then removed, and, after the resist mask is removed, cleavage is performed. As a result, even if the substrate and the layered nitride semiconductor portion are cleaved at a position where the exit-side cleaved facet and the reflection-side cleaved facet are formed, the insulating film is not broken. This helps prevent fragments produced from the insulating film from being adhered to the exit-side cleaved facet and to the reflection-side cleaved facet.
摘要翻译： 在本发明的一个实施例中，在制造氮化物半导体激光器件的方法中，在衬底上的层状氮化物半导体部分上形成绝缘膜之后，在绝缘膜上形成抗蚀剂掩模，使得绝缘膜 在出射侧切开面和反射侧切开面形成的位置附近露出。 然后除去形成出口侧劈开面和反射侧劈开面的位置附近的绝缘膜，在除去抗蚀剂掩模后，进行切割。 结果，即使在形成出射侧劈开面和反射面劈开面的位置处分离基板和层状氮化物半导体部分，绝缘膜也不会断裂。 这有助于防止从绝缘膜产生的碎片粘附到出射侧切割面和反射侧切割面。
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公开(公告)号：US20120220122A1
公开(公告)日：2012-08-30
申请号：US13468647
申请日：2012-05-10
IPC分类号： H01L21/283
CPC分类号： H01S5/22 , H01L21/28575 , H01L33/44 , H01S5/0425 , H01S5/2214 , H01S5/32341
摘要： Provided are a nitride semiconductor device and a manufacturing method thereof. The nitride semiconductor device includes an insulating layer and a metal layer formed on a nitride semiconductor layer. The insulating layer makes contact with the nitride semiconductor layer. A separation preventing layer is formed between the insulating layer and the metal layer so as to make contact with each of these layers. The separation preventing layer has, as a main component, at least one kind of oxide of a metal selected from the group consisting of tungsten, molybdenum, chromium, titanium, nickel, hafnium, zinc, indium and yttrium.
摘要翻译： 提供一种氮化物半导体器件及其制造方法。 氮化物半导体器件包括在氮化物半导体层上形成的绝缘层和金属层。 绝缘层与氮化物半导体层接触。 在绝缘层和金属层之间形成分离防止层，以便与这些层中的每一层接触。 作为主要成分，分离防止层具有选自钨，钼，铬，钛，镍，铪，锌，铟和钇中的至少一种金属的氧化物。
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公开(公告)号：US20060091501A1
公开(公告)日：2006-05-04
申请号：US11259035
申请日：2005-10-27
IPC分类号： H01L29/20
CPC分类号： H01S5/22 , H01L21/28575 , H01L33/44 , H01S5/0425 , H01S5/2214 , H01S5/32341
摘要： Provided are a nitride semiconductor device and a manufacturing method thereof The nitride semiconductor device includes an insulating layer and a metal layer formed on a nitride semiconductor layer. The insulating layer makes contact with the nitride semiconductor layer. A separation preventing layer is formed between the insulating layer and the metal layer so as to make contact with each of these layers. The separation preventing layer has, as a main component, at least one kind of oxide of a metal selected from the group consisting of tungsten, molybdenum, chromium, titanium, nickel, hafnium, zinc, indium and yttrium.
摘要翻译： 提供一种氮化物半导体器件及其制造方法。氮化物半导体器件包括在氮化物半导体层上形成的绝缘层和金属层。 绝缘层与氮化物半导体层接触。 在绝缘层和金属层之间形成分离防止层，以便与这些层中的每一层接触。 作为主要成分，分离防止层具有选自钨，钼，铬，钛，镍，铪，锌，铟和钇中的至少一种金属的氧化物。
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公开(公告)号：US06618416B1
公开(公告)日：2003-09-09
申请号：US09807003
申请日：2001-06-22
申请人： Mototaka Taneya , Kunihiro Takatani , Susumu Ohmi
发明人： Mototaka Taneya , Kunihiro Takatani , Susumu Ohmi
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/0021 , H01S5/2004 , H01S5/2086 , H01S5/2205 , H01S5/2206 , H01S5/221 , H01S5/2218 , H01S5/222 , H01S5/2231 , H01S5/3213 , H01S5/3216 , H01S5/32325 , H01S5/32341 , H01S5/34333
摘要： An InGaAlN-based semiconductor laser device, comprising a first layer of a first conductivity type, an active layer having a smaller forbidden band than that of the first layer, and a second layer of a second conductivity type having a larger forbidden band than that of the active layer. The second layer includes a flat region and a stripe-shaped projecting structure. A stripe-shaped optical waveguide forming layer of the second conductivity type having a larger refractive index than that of the second layer is formed on the stripe-shaped projecting structure. A current-constricting layer of the first conductivity type or of a high resistance is formed for covering a top surface of the flat region of the second layer, a side surface of the projecting structure of the second layer, and a side surface of the optical waveguide forming layer. A difference between a thermal expansion coefficient of the current-constricting layer and a thermal expansion coefficient of the second layer is in the range of −4×10−9/° C. to +4×10−9/° C.
摘要翻译： 1.一种InGaAlN系半导体激光器件，其特征在于，具有第一导电型的第一层，比第一层的禁带宽的有源层，以及具有比第一导电类型更大的禁带宽度的第二导电类型的第二层， 活动层。 第二层包括平坦区域和条形突起结构。 在条状突起结构上形成具有比第二层折射率大的第二导电类型的条形光波导形成层。 形成第一导电型或高电阻的电流限制层，用于覆盖第二层的平坦区域的顶表面，第二层的突出结构的侧表面和光学器件的侧表面 波导形成层。 电流限制层的热膨胀系数与第二层的热膨胀系数之间的差在-4×10 -9 /℃至+ 4×10 -9 /℃的范围内。
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公开(公告)号：US08203152B2
公开(公告)日：2012-06-19
申请号：US11259035
申请日：2005-10-27
IPC分类号： H01L33/00
CPC分类号： H01S5/22 , H01L21/28575 , H01L33/44 , H01S5/0425 , H01S5/2214 , H01S5/32341
摘要： The nitride semiconductor device includes an insulating layer and a metal layer formed on a nitride semiconductor layer. The insulating layer makes contact with the nitride semiconductor layer. A separation preventing layer is formed between the insulating layer and the metal layer so as to make contact with each of these layers. The separation preventing layer includes, as a main component, at least one oxide of a metal selected from a group of metals consisting of tungsten, molybdenum, chromium, titanium, nickel, hafnium, zinc, indium and yttrium.
摘要翻译： 氮化物半导体器件包括在氮化物半导体层上形成的绝缘层和金属层。 绝缘层与氮化物半导体层接触。 在绝缘层和金属层之间形成分离防止层，以便与这些层中的每一层接触。 作为主要成分的防分离层含有选自钨，钼，铬，钛，镍，铪，锌，铟，钇等金属的金属中的至少一种以上的金属。
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公开(公告)号：US07842956B2
公开(公告)日：2010-11-30
申请号：US11636570
申请日：2006-12-11
CPC分类号： H01S5/32341 , H01S5/0202 , H01S5/0425 , H01S2301/176
摘要： On a nitride semiconductor layered portion formed on a substrate, there are formed an insulating film and a p-side electrode in this order. Furthermore, an end portion electrode protection layer is formed above the p-side electrode, around a position where cleavage will take place.
摘要翻译： 在形成于基板上的氮化物半导体层叠部上依次形成绝缘膜和p侧电极。 此外，端部电极保护层形成在p侧电极的上方，围绕将发生分裂的位置。
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公开(公告)号：US20070131960A1
公开(公告)日：2007-06-14
申请号：US11636570
申请日：2006-12-11
IPC分类号： H01L33/00
CPC分类号： H01S5/32341 , H01S5/0202 , H01S5/0425 , H01S2301/176
摘要： On a nitride semiconductor layered portion formed on a substrate, there are formed an insulating film and a p-side electrode in this order. Furthermore, an end portion electrode protection layer is formed above the p-side electrode, around a position where cleavage will take place.
摘要翻译： 在形成于基板上的氮化物半导体层叠部上依次形成绝缘膜和p侧电极。 此外，端部电极保护层形成在p侧电极的上方，围绕将发生分裂的位置。
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公开(公告)号：US20060043409A1
公开(公告)日：2006-03-02
申请号：US11211544
申请日：2005-08-26
申请人： Susumu Ohmi
发明人： Susumu Ohmi
CPC分类号： H01S5/32341 , H01S5/22
摘要： A nitride semiconductor laser device of the present invention has an electrical connection point which is provided outside of a pair of trenches in the surface of an upper electrode layer so as to make an electrical connection to the outside. The thickness between the surface of the upper electrode layer and a nitride semiconductor growth layer in the electrical connection point is larger than the thickness between the upper electrode layer and the nitride semiconductor growth layer immediately above a ridge.
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