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公开(公告)号：US20090323746A1
公开(公告)日：2009-12-31
申请号：US11922137
申请日：2006-04-12
申请人： Susumu Ohmi , Takeshi Kamikawa
发明人： Susumu Ohmi , Takeshi Kamikawa
CPC分类号： H01S5/0201 , B82Y20/00 , H01S5/0202 , H01S5/0425 , H01S5/22 , H01S5/34333
摘要： In one embodiment of the present invention, in a method of fabricating a nitride semiconductor laser device, after an insulating film is formed on a layered nitride semiconductor portion on a substrate, a resist mask is formed on the insulating film, such that the insulating film is exposed near a position where an exit-side cleaved facet and a reflection-side cleaved facet are formed. The insulating film near a position where the exit-side cleaved facet and the reflection-side cleaved facet are formed is then removed, and, after the resist mask is removed, cleavage is performed. As a result, even if the substrate and the layered nitride semiconductor portion are cleaved at a position where the exit-side cleaved facet and the reflection-side cleaved facet are formed, the insulating film is not broken. This helps prevent fragments produced from the insulating film from being adhered to the exit-side cleaved facet and to the reflection-side cleaved facet.
摘要翻译： 在本发明的一个实施例中，在制造氮化物半导体激光器件的方法中，在衬底上的层状氮化物半导体部分上形成绝缘膜之后，在绝缘膜上形成抗蚀剂掩模，使得绝缘膜 在出射侧切开面和反射侧切开面形成的位置附近露出。 然后除去形成出口侧劈开面和反射侧劈开面的位置附近的绝缘膜，在除去抗蚀剂掩模后，进行切割。 结果，即使在形成出射侧劈开面和反射面劈开面的位置处分离基板和层状氮化物半导体部分，绝缘膜也不会断裂。 这有助于防止从绝缘膜产生的碎片粘附到出射侧切割面和反射侧切割面。
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2.发明授权公开(公告)号：US08803165B2
公开(公告)日：2014-08-12
申请号：US12216295
申请日：2008-07-02
申请人： Takeshi Kamikawa
发明人： Takeshi Kamikawa
IPC分类号： H01L27/15
CPC分类号： H01S5/32341
摘要： A nitride semiconductor light emitting device includes an n-type GaN substrate (101) that is a nitride semiconductor substrate, a nitride semiconductor layer including a p-type nitride semiconductor layer formed on the n-type GaN substrate (101). The p-type nitride semiconductor layer includes a p-type AlGaInN contact layer (108), a p-type AlGaInN cladding layer (107) under the p-type AlGaInN contact layer (108), and a p-type AlGaInN layer (106). A protection film (113) made of a silicon nitride film is formed above a current injection region formed in the p-type nitride semiconductor layer.
摘要翻译： 氮化物半导体发光器件包括作为氮化物半导体衬底的n型GaN衬底（101），包括形成在n型GaN衬底（101）上的p型氮化物半导体层的氮化物半导体层。 p型氮化物半导体层包括p型AlGaInN接触层（108），p型AlGaInN接触层（108）下的p型AlGaInN覆盖层（107）和p型AlGaInN层（106） ）。 在形成在p型氮化物半导体层中的电流注入区域的上方形成由氮化硅膜形成的保护膜（113）。
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3.发明授权公开(公告)号：US08368095B2
公开(公告)日：2013-02-05
申请号：US11638582
申请日：2006-12-14
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/44 , H01S5/028 , H01S5/2036 , H01S5/22
摘要： There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride.
摘要翻译： 提供一种具有涂覆有涂膜的发光部分的氮化物半导体发光器件，该发光部分由氮化物半导体形成，与发光部分接触的涂膜由氮氧化物形成。 还提供了一种制造氮化物半导体激光器件的方法，该器件具有具有涂覆有涂膜的小面的空腔，包括以下步骤：提供切割以形成腔的小平面; 并用由氮氧化物形成的涂膜涂覆空腔的小平面。
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4.发明申请Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device 有权氮化物半导体发光器件，氮化物半导体发光器件的制造方法以及氮化物半导体晶体管器件公开(公告)号：US20120015465A1
公开(公告)日：2012-01-19
申请号：US13200357
申请日：2011-09-23
IPC分类号： H01L33/26
CPC分类号： H01L29/7787 , B82Y20/00 , H01L29/2003 , H01L29/7786 , H01L33/44 , H01S5/028 , H01S5/22 , H01S5/34333
摘要： Example embodiments herein relate to a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminum nitride crystal or an aluminum oxynitride crystal.
摘要翻译： 本发明的实施例涉及包括形成在发光部分并且包括氮化铝晶体或氮氧化铝晶体的涂膜的氮化物半导体发光器件，以及制造氮化物半导体发光器件的方法。 还提供了一种氮化物半导体晶体管器件，其包括与氮化物半导体层接触并包括氮化铝晶体或氮氧化铝晶体的氮化物半导体层和栅极绝缘膜。
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5.发明授权Nitride semiconductor laser element and external-cavity semiconductor laser device 有权氮化物半导体激光元件和外腔半导体激光器件公开(公告)号：US07970035B2
公开(公告)日：2011-06-28
申请号：US12406533
申请日：2009-03-18
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0287 , H01S5/0425 , H01S5/141 , H01S5/2215 , H01S5/34333
摘要： Disclosed are a nitride semiconductor laser element including a light emitting portion made of a nitride semiconductor, and an external-cavity semiconductor laser device using it. In the nitride semiconductor laser element, a coat film made of silicon oxynitride is formed on the light emitting portion, and the reflectance of the coat film to feedback light of laser light emitted from the light emitting portion is 0.5% or less.
摘要翻译： 公开了包括由氮化物半导体制成的发光部分的氮化物半导体激光元件和使用它的外腔半导体激光器件。 在氮化物半导体激光元件中，在发光部分上形成由氮氧化硅制成的涂膜，并且涂膜对从发光部分发射的激光的反射光的反射率为0.5％以下。
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公开(公告)号：US07940003B2
公开(公告)日：2011-05-10
申请号：US12155978
申请日：2008-06-12
IPC分类号： H05B33/00
CPC分类号： H01S5/028 , B82Y20/00 , H01L2224/48091 , H01L2224/48247 , H01L2924/16152 , H01S5/0021 , H01S5/02212 , H01S5/02216 , H01S5/0282 , H01S5/0286 , H01S5/0287 , H01S5/0683 , H01S5/2009 , H01S5/2214 , H01S5/2231 , H01S5/34333 , Y10S362/80 , H01L2924/00014
摘要： The present invention comprises a light absorption film 5 which is formed on the outermost surface of an end surface on the light emitting side of a chip used in a laser device, typically, a laser chip 1 and which absorbs part of the light emitted. By forming this light absorption film 5, the collection and accumulation of pollutants which are caused by reacting with light emitted are curbed.
摘要翻译： 本发明包括光吸收膜5，其形成在激光装置中使用的芯片的发光侧的端面的最外表面上，通常为激光芯片1，并且其吸收部分发光的光。 通过形成该光吸收膜5，抑制由与发出的光反应引起的污染物的收集和积聚。
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7.发明授权公开(公告)号：US07750363B2
公开(公告)日：2010-07-06
申请号：US11543085
申请日：2006-10-05
IPC分类号： H01L29/74
CPC分类号： H01S5/2231 , B82Y20/00 , H01L33/44 , H01S5/0021 , H01S5/028 , H01S5/0282 , H01S5/34333
摘要： In a nitride semiconductor laser bar including a group III-V nitride semiconductor layer, on the front-side cavity end face, a separation layer of aluminum nitride is laid, and further on the separation layer, an end face coating film of aluminum oxide is laid. Likewise, on the rear-side cavity end face, a separation layer of aluminum nitride is laid, and further on the separation layer, an end face coating film of an aluminum oxide/TiO2 multilayer film is laid.
摘要翻译： 在包括III-V族氮化物半导体层的氮化物半导体激光器棒中，在前侧腔端面上铺设氮化铝的分离层，并且在分离层上，氧化铝的端面涂膜为 铺了 同样地，在后侧腔端面上，放置氮化铝的分离层，并且在分离层上还放置有氧化铝/ TiO 2多层膜的端面涂膜。
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8.发明申请NITRIDE SEMICONDUCTOR LASER ELEMENT AND EXTERNAL-CAVITY SEMICONDUCTOR LASER DEVICE 有权氮化物半导体激光元件和外部半导体激光器件公开(公告)号：US20090238229A1
公开(公告)日：2009-09-24
申请号：US12406533
申请日：2009-03-18
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0287 , H01S5/0425 , H01S5/141 , H01S5/2215 , H01S5/34333
摘要： Disclosed are a nitride semiconductor laser element including a light emitting portion made of a nitride semiconductor, and an external-cavity semiconductor laser device using it. In the nitride semiconductor laser element, a coat film made of silicon oxynitride is formed on the light emitting portion, and the reflectance of the coat film to feedback light of laser light emitted from the light emitting portion is 0.5% or less.
摘要翻译： 公开了包括由氮化物半导体制成的发光部分的氮化物半导体激光元件和使用它的外腔半导体激光器件。 在氮化物半导体激光元件中，在发光部分上形成由氮氧化硅制成的涂膜，并且涂膜对从发光部分发射的激光的反射光的反射率为0.5％以下。
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9.发明申请NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF FABRICATING IT, AND SEMICONDUCTOR OPTICAL APPARATUS 有权氮化物半导体发光器件，其制造方法和半导体光学器件公开(公告)号：US20090236585A1
公开(公告)日：2009-09-24
申请号：US12366480
申请日：2009-02-05
申请人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
发明人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
CPC分类号： B82Y20/00 , H01S5/0207 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/12
摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.
摘要翻译： 氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜 和位于其顶部的氮化物半导体层。 氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层， 易于显示p型导电性，以及条状激光波导区域。 激光波导区域形成在低位错区域的上方。 这有助于实现提供更长寿命的氮化物半导体激光器件。
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公开(公告)号：US20090116528A1
公开(公告)日：2009-05-07
申请号：US12285337
申请日：2008-10-02
IPC分类号： H01S5/04
CPC分类号： H01S5/32341 , H01S5/028 , H01S5/0287 , H01S5/2214 , H01S5/3202
摘要： A nitride semiconductor laser device has a multilayer structure formed by stacking a plurality of nitride semiconductor layers made of hexagonal nitride semiconductors, while the multilayer structure is provided with a waveguide structure for guiding a laser beam, the nitride semiconductor layers forming the multilayer structure are stacked in a direction substantially perpendicular to the c-axes of the hexagonal nitride semiconductors constituting the nitride semiconductor layers, a first cavity facet forming a side surface of the waveguide structure is a c-plane having Ga-polarity, a second cavity facet forming another side surface of the waveguide structure opposed to the first cavity facet is a c-plane having N-polarity, a crystalline nitrogen-containing film is formed on the surface of the first cavity facet, and the reflectance of the first cavity facet is smaller than the reflectance of the second cavity facet.
摘要翻译： 氮化物半导体激光器件具有通过堆叠由六方氮化物半导体制成的多个氮化物半导体层而形成的多层结构，而多层结构设置有用于引导激光束的波导结构，形成多层结构的氮化物半导体层被堆叠 在与构成氮化物半导体层的六方氮化物半导体的c轴大致垂直的方向上，形成波导结构的侧面的第一空腔面是具有Ga极性的c面，形成另一侧的第二腔面 与第一腔面相对的波导结构的表面是具有N极性的c面，在第一腔面的表面上形成结晶含氮膜，第一腔面的反射率小于 第二腔面的反射率。
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