发明授权
- 专利标题： Nitride semiconductor light emitting device and method of fabricating nitride semiconductor laser device
- 专利标题（中）： 氮化物半导体发光器件及其制造方法
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申请号： US11638582申请日： 2006-12-14
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公开(公告)号： US08368095B2公开(公告)日： 2013-02-05
- 发明人: Takeshi Kamikawa , Yoshinobu Kawaguchi
- 申请人： Takeshi Kamikawa , Yoshinobu Kawaguchi
- 申请人地址： JP Osaka-shi
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka-shi
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： JP2005-363590 20051216; JP2006-320327 20061128
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride.
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