摘要:
A radiation noise suppression circuit for a differential transmission line includes a differential transmission line which has plus line signal wiring to which a plus line signal of a differential signal is applied, and minus line signal wiring to which a minus line signal of the differential signal is applied, and connects a differential driver and a differential receiver. Plus line signal GND wiring and minus line signal GND wiring which are connected between the differential driver and the differential receiver are wired along the differential transmission line. A distance between the plus line signal wiring and the plus line signal GND wiring is substantially equal to a distance between the minus line signal wiring and the minus line signal GND wiring.
摘要:
A radiation noise suppression circuit for a differential transmission line includes a differential transmission line which has plus line signal wiring of a differential signal and minus line signal wiring of the differential signal, and connects a differential driver and a differential receiver; signal GND wiring one end of which is connected to the differential driver, and is wired outside along the differential transmission line; a coil unit in which each of the plus line signal wiring, the minus line signal wiring, and said signal GND wiring is wound in the same winding direction; a first impedance element and a second impedance element which have substantially the same impedance value, and which are connected in series between the plus line signal wiring and the minus line signal wiring at a location nearer to the differential receiver than the coil unit; and, a third impedance element one end of which is connected to a junction point, where the first impedance element and the second impedance element are connected, and another end of which is connected to another end of the signal GND wiring.
摘要:
A semiconductor device superior in reliability and suitable for microminiaturization is provided. An organic SOG film is formed on a silicon oxide film. Boron ions are implanted into the organic SOG film. By introducing boron ions into the organic SOG film, the organic components in the film are decomposed. Also, the moisture and hydroxyl group included in the film are reduced. After a metal interconnection is embedded in a modified SOG film by the Damascene method, a modified SOG film is formed thereon. Then, contact holes are formed. After a contact hole interconnection is embedded in the contact holes, a modified SOG film and an upper metal interconnection are formed by the Damascene method.
摘要:
A CAD apparatus includes a determining unit for determining a component order in ascending order of impedance of components for passive components amongst components to be placed on a printed wiring board. The CAD apparatus places each passive component in the determined component order in a vicinity of power pins of non-passive components that are already placed.
摘要:
A method of manufacturing a semiconductor device capable of suppressing increase of a leakage current resulting from a high-temperature heat treatment is obtained. In this manufacturing method, an impurity region is formed by selectively ion-implanting an impurity into the main surface of a semiconductor substrate. The impurity region is activated by performing a high-temperature heat treatment. The semiconductor device is recovered from crystal defects resulting from the high-temperature heat treatment by performing a low-temperature heat treatment after performing the high-temperature heat treatment. According to this manufacturing method, the semiconductor device is recovered from the crystal defects resulting from the ion implantation by the high-temperature heat treatment, and recovered from the crystal defects resulting from the high-temperature heat treatment by the low-temperature heat treatment. Thus, increase of a leakage current caused by the crystal defects resulting from the high-temperature heat treatment can be effectively prevented.
摘要:
A semiconductor device is disclosed, which includes an insulating layer and an interconnection layer having a conductive layer provided over the insulating layer. The interconnection layer is patterned by photolithography. The device further includes a cap-metal layer, which is deposited on the conductive layer and suppresses reflection of light beams at the time of patterning the interconnection layer. The cap-metal layer has any one of the following structures: a double-layered structure having a titanium nitride layer and a titanium layer located between the titanium nitride layer and the conductive layer; a double-layered structure having a titanium nitride layer and an aluminum-titanium alloy layer located between the titanium nitride layer and the conductive layer; and a single-layered structure consisting essentially of an aluminum-titanium alloy. These design ensure accurate interconnection patterning in the photolithography, and provide improved EM and SM immunities of the interconnection.
摘要:
A differential transmission line that has three or more signal lines and with which there is little unwanted radiation noise is provided. The differential transmission line 2 is provided with three signal lines 2a, 2b, and 2c that transmit differential signals from a differential driver IC1 to a differential receiver IC3, and the majority of the signal lines 2a, 2b, and 2c is provided in conductor layers T2 and T3 of a printed circuit board 4. The signal lines 2a, 2b, and 2c are provided with a signal line parallel segment, a signal line route length adjustment segment that is on the differential driver IC1 side and that connects from differential signal output terminals 1Ea, 1Eb, and 1Ec in the differential driver IC1 to the signal line parallel segment, and a signal line route length adjustment segment that is on the differential receiver IC3 side and that connects from the signal line parallel segment to differential signal input terminals in the differential receiver IC3, wherein the signal lines 2a, 2b, and 2c are formed such that their signal line route length adjustment segments on the differential driver IC1 side are equal in length to one another.
摘要:
A transmission cable that has three signal lines, and in which there is little unwanted radiation noise, is provided. In a section that is perpendicular to the longitudinal direction of the differential transmission cable, the distance between any two signal lines of the three signal lines is equal to a predetermined value. The differential transmission cable is twisted in its longitudinal direction. The differential transmission cable further includes a dielectric core line, and the signal lines are formed on the surface of the dielectric core line. In the differential transmission cable, the signal lines are formed in a helix in the longitudinal direction of the dielectric core line.
摘要:
A radiation noise suppression circuit for a differential transmission line includes a differential transmission line which has plus line signal wiring of a differential signal and minus line signal wiring of the differential signal, and connects a differential driver and a differential receiver; signal GND wiring. A first impedance element and a second impedance element have substantially the same impedance value, and are connected in series between the plus line signal wiring and the minus line signal wiring at a location nearer to the differential receiver than a coil unit. A third impedance element is connected to a junction point. The first impedance element and the second impedance element are connected.
摘要:
In a design aiding apparatus of the present invention, a plane clearance setting unit acquires information showing a predetermined margin, a component placement unit determines a placement area of a component such that, as seen in a lamination direction of a multilayer wiring board, at least one of the component and a pad connected to the component is included within a candidate area of a plane foil excluding a perimeter area, and a wiring unit determines a placement area of a wiring foil and a via in the same way that the placement area of the component is determined. Furthermore, in regard to a component, a component pad, a wiring foil, and a via whose placement areas have already been determined, a component placement inspection unit reports a design condition violation if the placement area of at least one of the component and the pad deviates outside the candidate area as seen in the lamination direction of the board, and a wiring inspection unit reports a design condition violation if the placement area of the wiring foil or the via deviates outside the candidate area as seen in the lamination direction of the board.