公开(公告)号：US20070096101A1

公开(公告)日：2007-05-03

申请号：US11608593

申请日：2006-12-08

Applicant: Mari Chiba ,  Hisashi Kudo ,  Shinichi Agatsuma

Inventor： Mari Chiba ,  Hisashi Kudo ,  Shinichi Agatsuma

IPC: H01L29/04 ,  H01L29/10 ,  H01L29/15 ,  H01L31/00 ,  H01L31/036

CPC classification number: B82Y20/00 ,  H01L33/005 ,  H01S5/2086 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/34326

Abstract: A semiconductor light emitting device includes a multi-layered semiconductor layer having at least a first conductive type cladding layer, an active layer, a second conductive type first cladding layer, an etching stop layer, and a second conductive type second cladding layer on a substrate. An upper section of a ridge groove is formed by an anisotropic etching process, as a first groove in such a way as to have a depth from a surface of the multi-layered semiconductor layer and as not to cross the etching stop layer at the depth. A bottom groove of the ridge groove is formed by an isotropic etching process, as a second groove by performing etching in such a way as to be stopped by the etching stop layer.

Abstract translation: 半导体发光器件包括：在基板上具有至少第一导电型包覆层，有源层，第二导电型第一包覆层，蚀刻停止层和第二导电型第二包覆层的多层半导体层 。 通过各向异性蚀刻工艺形成脊槽的上部，作为第一凹槽，以从多层半导体层的表面开始深度，并且不在深度处与蚀刻停止层交叉 。 通过各向同性蚀刻工艺形成脊槽的底部凹槽，作为第二凹槽，以蚀刻停止层的方式进行蚀刻。

公开(公告)号：US07141827B2

公开(公告)日：2006-11-28

申请号：US11165014

申请日：2005-06-23

Applicant: Hiroaki Abe ,  Shinichi Agatsuma ,  Nozomu Hoshi ,  Youichi Suzuki

Inventor： Hiroaki Abe ,  Shinichi Agatsuma ,  Nozomu Hoshi ,  Youichi Suzuki

IPC: H01L33/00

CPC classification number: B82Y20/00 ,  G11B7/127 ,  G11B7/1275 ,  H01S5/026 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/4056 ,  H01S5/4087

Abstract: AlGaInP system laser device (24) and AlGaAs system laser device (26) are arranged so that respective stripes (28, 30) are parallel to each other. The AlGaInP system laser device (24) is placed to (011) plane (22b) side from the centerline of the substrate and the AlGaAs system laser device (26) is placed to the (0{overscore (1)}{overscore (1)}) plane (22a) side from the centerline of the substrate when viewed from the main emitting plane (01{overscore (1)}) (22c) side of laser light. Substrate (22) is an off substrate and inclines from the (0{overscore (1)}{overscore (1)}) plane (22a) toward the (011) plane (22b) with respect to the (100) plane at a certain angle (θ off) within the range of 2 degrees and 15 degrees. Optical axis L1 of the AlGaInP system laser device (24) is parallel to optical axis L2 of the AlGaAs system laser device (26) and approaches at an angle of about 0.5 degrees.

公开(公告)号：US20060182161A1

公开(公告)日：2006-08-17

申请号：US11276040

申请日：2006-02-10

Applicant: Shinichi Agatsuma ,  Shiro Uchida

Inventor： Shinichi Agatsuma ,  Shiro Uchida

IPC: H01S5/20

CPC classification number: H01S5/22 ,  H01S5/0655 ,  H01S5/2219 ,  H01S5/222 ,  H01S5/32325

Abstract: A semiconductor laser of effective index type which has a lower cladding layer, an active layer, and an upper cladding layer, which are sequentially arranged upward, with said upper cladding layer being formed into the stripe ridge structure, wherein the upper cladding layer forming the foot and slope of said stripe ridge structure is covered with a buried layer of layered structure made up of two or more low refractive index layers to prevent absorption of the laser light, with a light-absorbing layer interposed between them which absorbs the laser light of oscillatory wavelength. This semiconductor laser prevents kinks due to higher-order modes, and hence it realizes a high level of output.

Abstract translation: 一种有效折射率类型的半导体激光器，其具有下包层，有源层和上包层，所述下包层依次布置在上方，所述上包层形成为条脊结构，其中形成 所述条纹脊结构的脚和斜面被由两个或更多个低折射率层组成的层状结构的掩埋层覆盖以防止激光的吸收，其间插入有吸收光的吸收层，其吸收激光的 振荡波长。 该半导体激光器防止由于高阶模式引起的扭结，因此实现了高水平的输出。

公开(公告)号：US07369594B2

公开(公告)日：2008-05-06

申请号：US11276040

申请日：2006-02-10

Applicant: Shinichi Agatsuma ,  Shiro Uchida

Inventor： Shinichi Agatsuma ,  Shiro Uchida

IPC: H01S5/00

CPC classification number: H01S5/22 ,  H01S5/0655 ,  H01S5/2219 ,  H01S5/222 ,  H01S5/32325

Abstract: A semiconductor laser of effective index type which has a lower cladding layer, an active layer, and an upper cladding layer, which are sequentially arranged upward, with said upper cladding layer being formed into the stripe ridge structure, wherein the upper cladding layer forming the foot and slope of said stripe ridge structure is covered with a buried layer of layered structure made up of two or more low refractive index layers to prevent absorption of the laser light, with a light-absorbing layer interposed between them which absorbs the laser light of oscillatory wavelength. This semiconductor laser prevents kinks due to higher-order modes, and hence it realizes a high level of output.

Abstract translation: 一种有效折射率类型的半导体激光器，其具有下包层，有源层和上包层，所述下包层依次布置在上方，所述上包层形成为条脊结构，其中形成 所述条纹脊结构的脚和斜面被由两个或更多个低折射率层组成的层状结构的掩埋层覆盖以防止激光的吸收，其间插入有吸收光的吸收层，其吸收激光的 振荡波长。 该半导体激光器防止由于高阶模式引起的扭结，因此实现了高水平的输出。

公开(公告)号：US06995399B2

公开(公告)日：2006-02-07

申请号：US10473688

申请日：2003-02-20

Applicant: Hiroaki Abe ,  Shinichi Agatsuma ,  Nozomu Hoshi ,  Youichi Suzuki

Inventor： Hiroaki Abe ,  Shinichi Agatsuma ,  Nozomu Hoshi ,  Youichi Suzuki

IPC: H01L27/15

CPC classification number: B82Y20/00 ,  G11B7/127 ,  G11B7/1275 ,  H01S5/026 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/4056 ,  H01S5/4087

Abstract: AlGaInP system laser device (24) and AlGaAs system laser device (26) are arranged so that respective stripes (28, 30) are parallel to each other. The AlGaInP system laser device (24) is placed to (011) plane (22b) side from the centerline of the substrate and the AlGaAs system laser device (26) is placed to the (0{overscore (1)}{overscore (1)}) plane (22a) side from the centerline of the substrate when viewed from the main emitting plane (01{overscore (1)}) (22c) side of laser light. Substrate (22) is an off substrate and inclines from the (0{overscore (1)}{overscore (1)}) plane (22a) toward the (011) plane (22b) with respect to the (100) plane at a certain angle (θ off) within the range of 2 degrees and 15 degrees. Optical axis L1 of the AlGaInP system laser device (24) is parallel to optical axis L2 of the AlGaAs system laser device (26) and approaches at an angle of about 0.5 degrees.

Abstract translation: AlGaInP系统激光器件（24）和AlGaAs系统激光器件（26）被布置成使得各条纹（28,30）彼此平行。 AlGaInP系统激光器件（24）从衬底的中心线放置到（011）平面（22b）侧，并且将AlGaAs系统激光器件（26）放置在（0 {过滤（1） 从主发射平面（01（激光的超（1）（22））侧观察基板的中心线的平面（22 a）侧，基板（22）是偏离基板，并从（0 { 在2度和15度的范围内相对于（100）平面以一定角度（θoff）向（011）平面（22b）向（011）平面（22b） AlGaInP系统激光器件（24）的轴L 1＆lt; 1＆gt;与AlGaAs系激光器件（26）的光轴L 2平行，并以约0.5°的角度接近 度。

公开(公告)号：US20050258434A1

公开(公告)日：2005-11-24

申请号：US11165014

申请日：2005-06-23

Applicant: Hiroaki Abe ,  Shinichi Agatsuma ,  Nozomu Hoshi ,  Youichi Suzuki

Inventor： Hiroaki Abe ,  Shinichi Agatsuma ,  Nozomu Hoshi ,  Youichi Suzuki

IPC: G11B7/126 ,  H01S5/026 ,  H01S5/223 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40 ,  H01L27/15

CPC classification number: B82Y20/00 ,  G11B7/127 ,  G11B7/1275 ,  H01S5/026 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/4056 ,  H01S5/4087

Abstract: AlGaInP system laser device (24) and AlGaAs system laser device (26) are arranged so that respective stripes (28, 30) are parallel to each other. The AlGaInP system laser device (24) is placed to (011) plane (22b) side from the centerline of the substrate and the AlGaAs system laser device (26) is placed to the (0{overscore (1)}{overscore (1)}) plane (22a) side from the centerline of the substrate when viewed from the main emitting plane (01{overscore (1)}) (22c) side of laser light. Substrate (22) is an off substrate and inclines from the (0{overscore (1)}{overscore (1)}) plane (22a) toward the (011) plane (22b) with respect to the (100) plane at a certain angle (θ off) within the range of 2 degrees and 15 degrees. Optical axis L1 of the AlGaInP system laser device (24) is parallel to optical axis L2 of the AlGaAs system laser device (26) and approaches at an angle of about 0.5 degrees.

Abstract translation: AlGaInP系统激光器件（24）和AlGaAs系统激光器件（26）被布置成使得各条纹（28,30）彼此平行。 AlGaInP系统激光器件（24）从衬底的中心线放置到（011）平面（22b）侧，并且将AlGaAs系统激光器件（26）放置在（0 {过滤（1） 从主发射平面（01（激光的超（1）（22））侧观察基板的中心线的平面（22 a）侧，基板（22）是偏离基板，并从（0 { 在2度和15度的范围内相对于（100）平面以一定角度（θoff）向（011）平面（22b）向（011）平面（22b） AlGaInP系统激光器件（24）的轴L 1＆lt; 1＆gt;与AlGaAs系激光器件（26）的光轴L 2平行，并以约0.5°的角度接近 度。

公开(公告)号：US20050208770A1

公开(公告)日：2005-09-22

申请号：US11008484

申请日：2004-12-09

Applicant: Mari Chiba ,  Hisashi Kudo ,  Shinichi Agatsuma

Inventor： Mari Chiba ,  Hisashi Kudo ,  Shinichi Agatsuma

IPC: H01S5/223 ,  H01L21/302 ,  H01S5/20 ,  H01S5/22 ,  H01S5/343

CPC classification number: B82Y20/00 ,  H01L33/005 ,  H01S5/2086 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/34326

Abstract: A method of manufacturing a ridge type semiconductor light emitting device includes: a process of epitaxially growing a multi-layered semiconductor layer having at least a first conductive type cladding layer, an active layer, a second conductive type first cladding layer, an etching stop layer, and a second conductive type second cladding layer on a substrate; a process of forming a ridge groove for forming a ridge; and a process of forming a current-flow barrier layer in the ridge groove. The process of forming ridge grooves has first and second anisotropic etching processes of performing anisotropic etching, an etching-mask forming process, and an isotropic etching process of performing anisotropic etching.

Abstract translation: 一种制造脊型半导体发光器件的方法包括：外延生长具有至少第一导电型包覆层，有源层，第二导电型第一包覆层，蚀刻停止层的多层半导体层的工艺 和在基板上的第二导电型第二包覆层; 形成用于形成脊的脊槽的过程; 以及在脊槽中形成电流阻挡层的工序。 形成脊槽的过程具有执行各向异性蚀刻，蚀刻掩模形成工艺和进行各向异性蚀刻的各向同性蚀刻工艺的第一和第二各向异性蚀刻工艺。

公开(公告)号：US07851810B2

公开(公告)日：2010-12-14

申请号：US11608593

申请日：2006-12-08

Applicant: Mari Chiba ,  Hisashi Kudo ,  Shinichi Agatsuma

Inventor： Mari Chiba ,  Hisashi Kudo ,  Shinichi Agatsuma

IPC: H01L21/00

CPC classification number: B82Y20/00 ,  H01L33/005 ,  H01S5/2086 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/34326

Abstract: A semiconductor light emitting device includes a multi-layered semiconductor layer having at least a first conductive type cladding layer, an active layer, a second conductive type first cladding layer, an etching stop layer, and a second conductive type second cladding layer on a substrate. An upper section of a ridge groove is formed by an anisotropic etching process, as a first groove in such a way as to have a depth from a surface of the multi-layered semiconductor layer and as not to cross the etching stop layer at the depth. A bottom groove of the ridge groove is formed by an isotropic etching process, as a second groove by performing etching in such a way as to be stopped by the etching stop layer.

Abstract translation: 半导体发光器件包括：在基板上具有至少第一导电型包覆层，有源层，第二导电型第一包覆层，蚀刻停止层和第二导电型第二包覆层的多层半导体层 。 通过各向异性蚀刻工艺形成脊槽的上部，作为第一凹槽，以从多层半导体层的表面开始深度，并且不在深度处与蚀刻停止层交叉 。 通过各向同性蚀刻工艺形成脊槽的底部凹槽，作为第二凹槽，以蚀刻停止层的方式进行蚀刻。

公开(公告)号：US20050207462A1

公开(公告)日：2005-09-22

申请号：US11053430

申请日：2005-02-08

Applicant: Shinichi Agatsuma ,  Shiro Uchida

Inventor： Shinichi Agatsuma ,  Shiro Uchida

IPC: G11B7/125 ,  G11B7/00 ,  G11B7/1275 ,  H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/40

CPC classification number: G11B7/1275 ,  G11B2007/0006 ,  H01S5/2063 ,  H01S5/2231 ,  H01S5/3211 ,  H01S5/32325 ,  H01S5/4031 ,  H01S5/4087

Abstract: A semiconductor laser is provided, of a configuration that is capable of correcting a difference between refractive indexes when an epitaxial growth is given in an irregular surface condition. A semiconductor laser is formed, which has a semiconductor laser element of a compound semiconductor containing at least Al and In, and having at least p-type cladding layers, an active layer, and an-type cladding layer, and has a configuration in which at least part of the p-type cladding layers have an Al composition in relatively larger amount as compared with an Al composition of the n-type cladding layer or at least part of the n-type cladding layer has an Al composition in relatively smaller amount as compared with the Al composition of the p-type cladding layers.

Abstract translation: 提供了一种能够在不规则表面状态下进行外延生长时校正折射率差的结构的半导体激光器。 形成半导体激光器，其具有至少包含Al和In的化合物半导体的半导体激光元件，并且至少具有p型覆层，有源层和类型包层，并且具有其中 与n型包覆层的Al组成相比，p型包层的至少一部分具有相对较大量的Al组成，或者n型包覆层的至少一部分具有相对较小量的Al组成 与p型覆层的Al组成相比。

公开(公告)号：US07208338B2

公开(公告)日：2007-04-24

申请号：US11008484

申请日：2004-12-09

Applicant: Mari Chiba ,  Hisashi Kudo ,  Shinichi Agatsuma

Inventor： Mari Chiba ,  Hisashi Kudo ,  Shinichi Agatsuma

IPC: H01L21/00 ,  H01L29/22 ,  H01L33/00

CPC classification number: B82Y20/00 ,  H01L33/005 ,  H01S5/2086 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/34326

Abstract: A method of manufacturing a ridge type semiconductor light emitting device includes: a process of epitaxially growing a multi-layered semiconductor layer having at least a first conductive type cladding layer, an active layer, a second conductive type first cladding layer, an etching stop layer, and a second conductive type second cladding layer on a substrate; a process of forming a ridge groove for forming a ridge; and a process of forming a current-flow barrier layer in the ridge groove. The process of forming ridge grooves has first and second anisotropic etching processes of performing anisotropic etching, an etching-mask forming process, and an isotropic etching process of performing anisotropic etching.

Abstract translation: 一种制造脊型半导体发光器件的方法包括：外延生长具有至少第一导电型包覆层，有源层，第二导电型第一包覆层，蚀刻停止层的多层半导体层的工艺 和在基板上的第二导电型第二包覆层; 形成用于形成脊的脊槽的过程; 以及在脊槽中形成电流阻挡层的工序。 形成脊槽的过程具有执行各向异性蚀刻，蚀刻掩模形成工艺和进行各向异性蚀刻的各向同性蚀刻工艺的第一和第二各向异性蚀刻工艺。