公开(公告)号：US20130181320A1

公开(公告)日：2013-07-18

申请号：US13350010

申请日：2012-01-13

Applicant: Chun-Chang Chen ,  Shih-Chi Fu ,  Wang-Pen Mo ,  Hung-Chang Hsieh

Inventor： Chun-Chang Chen ,  Shih-Chi Fu ,  Wang-Pen Mo ,  Hung-Chang Hsieh

IPC: H01L29/00 ,  B44C1/22 ,  H01L21/311

CPC classification number: H01L21/0276 ,  H01L21/32139 ,  H01L21/823431 ,  H01L21/823456

Abstract: Some embodiments relate to a method for processing a workpiece. In the method, an anti-reflective coating layer is provided over the workpiece. A first patterned photoresist layer, which has a first photoresist tone, is provided over the anti-reflective coating layer. A second patterned photoresist layer, which has a second photoresist tone opposite the first photoresist tone, is provided over the first patterned photoresist layer. An opening extends through the first and second patterned photoresist layers to allow a treatment to be applied to the workpiece through the opening. Other embodiments are also disclosed.

Abstract translation: 一些实施例涉及用于处理工件的方法。 在该方法中，在工件上方设有抗反射涂层。 具有第一光致抗蚀剂色调的第一图案化光致抗蚀剂层设置在抗反射涂层上。 在第一图案化光致抗蚀剂层上提供具有与第一光致抗蚀剂色调相反的第二光致抗蚀剂色调的第二图案化光致抗蚀剂层。 开口延伸穿过第一和第二图案化的光致抗蚀剂层，以允许通过开口对工件施加处理。 还公开了其他实施例。

公开(公告)号：US20130137266A1

公开(公告)日：2013-05-30

申请号：US13306299

申请日：2011-11-29

Applicant: Chun-Chang Chen ,  Shih-Chi Fu ,  Wang-Pen Mo ,  Hung Chang Hsieh

Inventor： Chun-Chang Chen ,  Shih-Chi Fu ,  Wang-Pen Mo ,  Hung Chang Hsieh

IPC: H01L21/311

CPC classification number: H01L21/32139 ,  H01L21/0271 ,  H01L27/11541 ,  H01L29/66795

Abstract: Some embodiments relate to a method for processing a workpiece. In the method, a first photoresist layer is provided over the workpiece, wherein the first photoresist layer has a first photoresist tone. The first photoresist layer is patterned to provide a first opening exposing a first portion of the workpiece. A second photoresist layer is then provided over the patterned first photoresist layer, wherein the second photoresist layer has a second photoresist tone opposite the first photoresist tone. The second photoresist layer is then patterned to provide a second opening that at least partially overlaps the first opening to define a coincidentally exposed workpiece region. A treatment is then performed on the coincidentally exposed workpiece region. Other embodiments are also disclosed.

Abstract translation: 一些实施例涉及用于处理工件的方法。 在该方法中，在工件上设置第一光致抗蚀剂层，其中第一光致抗蚀剂层具有第一光致抗蚀剂色调。 图案化第一光致抗蚀剂层以提供暴露工件的第一部分的第一开口。 然后在图案化的第一光刻胶层上提供第二光致抗蚀剂层，其中第二光致抗蚀剂层具有与第一光致抗蚀剂色调相反的第二光致抗蚀剂色调。 然后对第二光致抗蚀剂层进行图案化以提供与第一开口至少部分重叠的第二开口，以限定重合的工件区域。 然后对同时暴露的工件区域进行处理。 还公开了其他实施例。

公开(公告)号：US08178422B2

公开(公告)日：2012-05-15

申请号：US12415005

申请日：2009-03-31

Applicant: Alex Hsu ,  Shih-Chi Fu ,  Feng-Jia Shiu ,  Chia-Shiung Tsai

Inventor： Alex Hsu ,  Shih-Chi Fu ,  Feng-Jia Shiu ,  Chia-Shiung Tsai

IPC: H01L21/76 ,  H01L21/00 ,  H01L23/544

CPC classification number: G03F9/7084 ,  G03F7/70633 ,  G03F9/7076 ,  G03F9/7088

Abstract: Provided is a method of fabricating a semiconductor device. The method includes providing a device substrate having a front side and a back side, the device substrate having a first refractive index, forming an embedded target over the front side of the device substrate, forming a reflective layer over the embedded target, forming a media layer over the back side of the device substrate, the media layer having a second refractive index less than the first refractive index, and projecting radiation through the media layer and the device substrate from the back side so that the embedded target is detected for a semiconductor process.

Abstract translation: 提供一种制造半导体器件的方法。 该方法包括提供具有前侧和后侧的器件衬底，器件衬底具有第一折射率，在器件衬底的前侧上形成嵌入的靶，在嵌入的靶上形成反射层，形成介质 所述介质层具有小于所述第一折射率的第二折射率，并且从所述背面将辐射从所述介质层和所述器件基板突出以使得所述嵌入的靶被检测为半导体 处理。

公开(公告)号：US07923344B2

公开(公告)日：2011-04-12

申请号：US12634080

申请日：2009-12-09

Applicant: Shih-Chi Fu ,  Gwo-Yuh Shiau ,  Liang-Lung Yao ,  Yuan-Chih Hsieh ,  Feng-Jia Shiu

Inventor： Shih-Chi Fu ,  Gwo-Yuh Shiau ,  Liang-Lung Yao ,  Yuan-Chih Hsieh ,  Feng-Jia Shiu

IPC: H01L31/18

CPC classification number: H01L27/14689 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  Y10S438/977

Abstract: A method for fabricating a backside illuminated image sensor is provided. An exemplary method can include providing a substrate with a front surface and a back surface; forming a first alignment mark for global alignment on the front surface of the substrate; forming a second alignment mark for fine alignment in a clear-out region on the front surface of the substrate; aligning the substrate from the back surface using the first alignment mark; and removing a portion of the back surface of the substrate at the clear-out region for locating the second alignment mark.

Abstract translation: 提供了制造背面照明图像传感器的方法。 示例性方法可以包括提供具有前表面和后表面的基底; 在所述基板的前表面上形成用于全局对准的第一对准标记; 形成用于在所述基板的前表面上的透明区域中精细对准的第二对准标记; 使用第一对准标记从背面对准基板; 以及在所述清除区域处去除所述基板的背面的一部分以定位所述第二对准标记。

公开(公告)号：US20100151615A1

公开(公告)日：2010-06-17

申请号：US12710441

申请日：2010-02-23

Applicant: Gwo-Yuh Shiau ,  Ming-Chyi Liu ,  Yuan-Chih Hsieh ,  Shih-Chi Fu ,  Chia-Shiung Tsai

Inventor： Gwo-Yuh Shiau ,  Ming-Chyi Liu ,  Yuan-Chih Hsieh ,  Shih-Chi Fu ,  Chia-Shiung Tsai

IPC: H01L31/18

CPC classification number: H01L27/14687 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14831

Abstract: Image sensor devices and methods for fabricating the same are provided. An exemplary embodiment of an image sensor device comprises a support substrate. A passivation structure is formed over the support substrate. An interconnect structure is formed over the passivation structure. A first semiconductor layer is formed over the interconnect structure, having a first and second surfaces, wherein the first and second surfaces are opposing surfaces. At least one light-sensing device is formed over/in the first semiconductor layer from a first surface thereof. A color filter layer is formed over the first semiconductor layer from a second surface thereof. At least one micro lens is formed over the color filter layer.

Abstract translation: 提供了图像传感器装置及其制造方法。 图像传感器装置的示例性实施例包括支撑衬底。 在支撑衬底上形成钝化结构。 在钝化结构上形成互连结构。 第一半导体层形成在互连结构上，具有第一和第二表面，其中第一和第二表面是相对的表面。 至少一个感光装置从其第一表面形成在第一半导体层之上/之中。 滤色器层从其第二表面形成在第一半导体层上。 在滤色器层上形成至少一个微透镜。

公开(公告)号：US07544982B2

公开(公告)日：2009-06-09

申请号：US11542064

申请日：2006-10-03

Applicant: Chung-Yi Yu ,  Chia-Shiung Tsai ,  Shih-Chi Fu

Inventor： Chung-Yi Yu ,  Chia-Shiung Tsai ,  Shih-Chi Fu

IPC: H01L31/062

CPC classification number: H01L27/14627 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor device is provided. A substrate has a photosensor region formed therein and/or thereon. An interconnection structure is formed over the substrate, and includes metal lines formed in inter-metal dielectric (IMD) layers. At least one IMD-level micro-lens is/are formed in at least one of the IMD layers over the photosensor region. Preferably, barrier layers are located between the IMD layers. Preferably, each of the barrier layers at each level has a net thickness limited to 100 angstroms or less at locations over the photosensor region, except at locations where the IMD-level micro-lenses are located. The IMD-level micro-lenses and the etch stop layers preferably have a refractive index greater than that of the IMD layers. A cap layer is preferably formed on the metal lines, especially when the metal lines include copper. An upper-level micro-lens may be located on a level that is above the interconnection structure.

Abstract translation: 提供图像传感器装置。 衬底在其中和/或其上形成有光电传感器区域。 在衬底上形成互连结构，并且包括在金属间电介质（IMD）层中形成的金属线。 在光电传感器区域中的至少一个IMD层中形成至少一个IMD级微透镜。 优选地，阻挡层位于IMD层之间。 优选地，除了在IMD级微透镜所在的位置之外，每个级别的每个阻挡层的净厚度在光电传感器区域之外的位置处具有限制在100埃或更小的净厚度。 IMD级微透镜和蚀刻停止层优选具有大于IMD层的折射率的折射率。 优选在金属线上形成覆盖层，特别是当金属线包括铜时。 上级微透镜可以位于互连结构之上的层上。

公开(公告)号：US20080061330A1

公开(公告)日：2008-03-13

申请号：US11531290

申请日：2006-09-13

Applicant: Gwo-Yuh Shiau ,  Ming-Chyi Liu ,  Yuan-Chih Hsieh ,  Shih-Chi Fu ,  Chia-Shiung Tsai

Inventor： Gwo-Yuh Shiau ,  Ming-Chyi Liu ,  Yuan-Chih Hsieh ,  Shih-Chi Fu ,  Chia-Shiung Tsai

IPC: H01L31/062

CPC classification number: H01L27/14687 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14831

Abstract: Image sensor devices and methods for fabricating the same are provided. An exemplary embodiment of an image sensor device comprises a support substrate. A passivation structure is formed over the support substrate. An interconnect structure is formed over the passivation structure. A first semiconductor layer is formed over the interconnect structure, having a first and second surfaces, wherein the first and second surfaces are opposing surfaces. At least one light-sensing device is formed over/in the first semiconductor layer from a first surface thereof. A color filter layer is formed over the first semiconductor layer from a second surface thereof. At least one micro lens is formed over the color filter layer.

Abstract translation: 提供了图像传感器装置及其制造方法。 图像传感器装置的示例性实施例包括支撑衬底。 在支撑衬底上形成钝化结构。 在钝化结构上形成互连结构。 第一半导体层形成在互连结构上，具有第一和第二表面，其中第一和第二表面是相对的表面。 至少一个感光装置从其第一表面形成在第一半导体层之上/之中。 滤色器层从其第二表面形成在第一半导体层上。 在滤色器层上形成至少一个微透镜。

公开(公告)号：US20070023816A1

公开(公告)日：2007-02-01

申请号：US11191437

申请日：2005-07-27

Applicant: Yuan-Hung Liu ,  Shih-Chi Fu ,  Chi-Hsin Lo ,  Chia-Shiung Tsai

Inventor： Yuan-Hung Liu ,  Shih-Chi Fu ,  Chi-Hsin Lo ,  Chia-Shiung Tsai

IPC: H01L29/788

CPC classification number: H01L29/42324 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/7881

Abstract: An EEPROM flash memory device having a floating gate electrode enabling a reduced erase voltage and method for forming the same, the floating gate electrode including an outer edge portion comprising multiple charge transfer pointed tips.

Abstract translation: 一种具有能够实现降低的擦除电压的浮动栅电极的EEPROM闪存器件及其形成方法，该浮栅电极包括包含多个电荷转移尖端的外边缘部分。

公开(公告)号：US20050274968A1

公开(公告)日：2005-12-15

申请号：US10982978

申请日：2004-11-05

Applicant: Ching-Sen Kuo ,  Feng-Jia Shiu ,  Gwo-Yuh Shiau ,  Jieh-Jang Chen ,  Shih-Chi Fu ,  Chien Tseng ,  Chia-Shiung Tsai ,  Yuan-Hung Liu ,  Yeur-Luen Tu ,  Chih-Ta Wu ,  Chi-Hsin Lo

Inventor： Ching-Sen Kuo ,  Feng-Jia Shiu ,  Gwo-Yuh Shiau ,  Jieh-Jang Chen ,  Shih-Chi Fu ,  Chien Tseng ,  Chia-Shiung Tsai ,  Yuan-Hung Liu ,  Yeur-Luen Tu ,  Chih-Ta Wu ,  Chi-Hsin Lo

IPC: H01L21/00 ,  H01L27/146 ,  H01L29/04 ,  H01L29/06 ,  H01L29/10 ,  H01L29/22 ,  H01L29/227 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L33/00 ,  H01L47/02

CPC classification number: H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor includes a double-microlens structure with an outer microlens aligned over an inner microlens, both microlenses aligned over a corresponding photosensor. The inner or outer microlens may be formed by a silylation process in which a reactive portion of a photoresist material reacts with a silicon-containing agent. The inner or outer microlens may be formed by step etching of a dielectric material, the step etching process including a series of alternating etch steps including an anisotropic etching step and an etching step that causes patterned photoresist to laterally recede. Subsequent isotropic etching processes may be used to smooth the etched step structure and form a smooth lens. A thermally stable and photosensitive polymeric/organic material may also be used to form permanent inner or outer lenses. The photosensitive material is coated then patterned using photolithography, reflowed, then cured to form a permanent lens structure.

Abstract translation: 图像传感器包括双微透镜结构，其外部微透镜在内部微透镜上对准，两个微透镜在相应的光电传感器上对准。 内部或外部微透镜可以通过甲硅烷基化方法形成，其中光致抗蚀剂材料的反应性部分与含硅试剂反应。 内部或外部微透镜可以通过介电材料的步骤蚀刻形成，该步骤蚀刻工艺包括一系列交替蚀刻步骤，其包括各向异性蚀刻步骤和使图案化光致抗蚀剂横向后退的蚀刻步骤。 可以使用随后的各向同性蚀刻工艺来平滑蚀刻的台阶结构并形成光滑的透镜。 热稳定和感光的聚合物/有机材料也可用于形成永久的内镜片或外镜片。 感光材料被涂覆，然后使用光刻图案化，回流，然后固化以形成永久性透镜结构。

公开(公告)号：US09171876B2

公开(公告)日：2015-10-27

申请号：US14291384

申请日：2014-05-30

Applicant: Shih-Chi Fu ,  Kai Tzeng ,  Wen-Chen Lu

Inventor： Shih-Chi Fu ,  Kai Tzeng ,  Wen-Chen Lu

IPC: H01L21/02 ,  H01L21/331 ,  H01L27/146 ,  H01L21/762 ,  H01L31/18

CPC classification number: H01L27/14887 ,  H01L21/76237 ,  H01L27/1463 ,  H01L27/14654 ,  H01L27/14672 ,  H01L27/14683 ,  H01L27/14689 ,  H01L31/18

Abstract: A method of preparing self-aligned isolation regions between two neighboring sensor elements on a substrate. The method includes patterning an oxide layer to form an opening between the two neighboring sensor elements on the substrate. The method further includes performing a first implant to form a deep doped region between the two neighboring sensor elements and starting at a distance below a top surface of the substrate. The method further includes performing a second implant to form a shallow doped region between the two neighboring sensor elements, wherein a bottom portion of the shallow doped region overlaps with a top portion of the deep doped region.

Abstract translation: 一种在衬底上的两个相邻传感器元件之间制备自对准隔离区域的方法。 该方法包括图案化氧化物层以在衬底上的两个相邻传感器元件之间形成开口。 所述方法还包括执行第一注入以在所述两个相邻的传感器元件之间形成深掺杂区域并且从所述衬底的顶表面下方的距离开始。 该方法还包括执行第二植入以在两个相邻传感器元件之间形成浅掺杂区域，其中浅掺杂区域的底部与深掺杂区域的顶部部分重叠。