公开(公告)号：US20140091330A1

公开(公告)日：2014-04-03

申请号：US13633671

申请日：2012-10-02

申请人： Ming-Hung CHEN ,  Ching-Jen Pan ,  Shih-Chang Shei

发明人： Ming-Hung CHEN ,  Ching-Jen Pan ,  Shih-Chang Shei

IPC分类号： H01L33/42

CPC分类号： H01L27/156 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention discloses a LED package structure with transparent electrodes. The electrode layers the semiconductor layers inside the LED chip and the protection layer are all transparent to visible and invisible lights. With the adoption of the present invention, electrodes on the LED package no longer block any part of the light emission from inside the LED.

摘要翻译： 本发明公开了一种具有透明电极的LED封装结构。 LED芯片内的半导体层的电极层和保护层对可见光和隐形灯都是透明的。 采用本发明，LED封装上的电极不再阻挡来自LED内的发光的任何部分。

公开(公告)号：US07910395B2

公开(公告)日：2011-03-22

申请号：US12441204

申请日：2006-09-13

申请人： Shih-Chang Shei ,  Ming-Hung Chen ,  Shih-Yi Wen ,  Chun-Che Lee

发明人： Shih-Chang Shei ,  Ming-Hung Chen ,  Shih-Yi Wen ,  Chun-Che Lee

IPC分类号： H01L21/00

CPC分类号： H01L27/156 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/05099

摘要： An LED structure includes a first substrate; an adhering layer formed on the first substrate; first ohmic contact layers formed on the adhering layer; epi-layers formed on the first ohmic contact layers; a first isolation layer covering the first ohmic contact layers and the epi-layers at exposed surfaces thereof; and first electrically conducting plates and second electrically conducting plates, both formed in the first isolation layer and electrically connected to the first ohmic contact layers and the epi-layers, respectively. The trenches allow the LED structure to facilitate complex serial/parallel connection so as to achieve easy and various applications of the LED structure in the form of single structures under a high-voltage environment.

摘要翻译： LED结构包括第一基板; 形成在所述第一基板上的粘附层; 形成在粘附层上的第一欧姆接触层; 形成在第一欧姆接触层上的外延层; 覆盖其暴露表面的第一欧姆接触层和外延层的第一隔离层; 以及第一导电板和第二导电板，两者分别形成在第一隔离层中并电连接到第一欧姆接触层和外延层。 沟槽允许LED结构促进复杂的串联/并联连接，以便在高压环境下以单结构的形式实现LED结构的简单和多种应用。

公开(公告)号：US20100059733A1

公开(公告)日：2010-03-11

申请号：US12441204

申请日：2006-09-13

申请人： Shih-Chang Shei ,  Ming-Hung Chen ,  Shih-Yi Wen ,  Chun-Che Lee

发明人： Shih-Chang Shei ,  Ming-Hung Chen ,  Shih-Yi Wen ,  Chun-Che Lee

IPC分类号： H01L33/00

CPC分类号： H01L27/156 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/05099

摘要： An LED structure includes a first substrate; an adhering layer formed on the first substrate; first ohmic contact layers formed on the adhering layer; epi-layers formed on the first ohmic contact layers; a first isolation layer covering the first ohmic contact layers and the epi-layers at exposed surfaces thereof; and first electrically conducting plates and second electrically conducting plates, both formed in the first isolation layer and electrically connected to the first ohmic contact layers and the epi-layers, respectively. The first trenches or the second trenches allow the LED structure to facilitate complex serial/parallel connection so as to achieve easy and various applications of the LED structure in the form of single structures under a high-voltage environment.

摘要翻译： LED结构包括第一基板; 形成在所述第一基板上的粘附层; 形成在粘附层上的第一欧姆接触层; 形成在第一欧姆接触层上的外延层; 覆盖其暴露表面的第一欧姆接触层和外延层的第一隔离层; 以及第一导电板和第二导电板，两者分别形成在第一隔离层中并电连接到第一欧姆接触层和外延层。 第一沟槽或第二沟槽允许LED结构促进复杂的串联/并联连接，以便在高压环境下以单结构的形式实现LED结构的简单和多种应用。

公开(公告)号：US07115915B2

公开(公告)日：2006-10-03

申请号：US10917928

申请日：2004-08-13

申请人： Shih-Chang Shei ,  Yen-Wei Chen ,  Wei-Shou Chen ,  Chia-Sheng Chang ,  Hsin-Ming Lo ,  Chien-Fu Shen

发明人： Shih-Chang Shei ,  Yen-Wei Chen ,  Wei-Shou Chen ,  Chia-Sheng Chang ,  Hsin-Ming Lo ,  Chien-Fu Shen

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L33/0079 ,  H01L33/42

摘要： A light-emitting diode (LED) is described. The light-emitting diode comprises a metal substrate, a reflective layer, a first transparent conductive layer, an illuminant epitaxial structure and a second transparent conductive layer stacked in sequence, and an electrode located on a portion of the second transparent conductive layer. A thickness of the metal substrate is between 30 μm and 150 μm. In addition, the light-emitting diode can further comprises a supporting substrate and an adhesive layer. The adhesive layer is located between the supporting substrate and the metal substrate to adhere the supporting substrate onto the metal substrate.

摘要翻译： 描述了发光二极管（LED）。 发光二极管包括金属基板，反射层，第一透明导电层，发光体外延结构和依次层叠的第二透明导电层，以及位于第二透明导电层的一部分上的电极。 金属基板的厚度在30μm到150μm之间。 此外，发光二极管还可以包括支撑衬底和粘合剂层。 粘合剂层位于支撑基板和金属基板之间，以将支撑基板粘附到金属基板上。

公开(公告)号：US20050168127A1

公开(公告)日：2005-08-04

申请号：US10711002

申请日：2004-08-17

申请人： Shih-Chang Shei ,  Jinn-Kong Sheu ,  Jui-Kung Wu ,  Tai-Yu Chen ,  Chao-Lung Huang

发明人： Shih-Chang Shei ,  Jinn-Kong Sheu ,  Jui-Kung Wu ,  Tai-Yu Chen ,  Chao-Lung Huang

IPC分类号： C09K11/59 ,  C09K11/64 ,  C09K11/74 ,  C09K11/77 ,  H01L33/50 ,  H05B33/00

CPC分类号： C09K11/7774 ,  C09K11/592 ,  C09K11/643 ,  C09K11/7421 ,  C09K11/7701 ,  C09K11/7731 ,  C09K11/7734 ,  C09K11/778 ,  C09K11/7784 ,  C09K11/7787 ,  C09K11/7789 ,  C09K11/7796 ,  H01L33/502 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  Y02B20/181

摘要： A white light LED is provided. The white light LED includes an exciting light source and a fluorescent powder, wherein the wavelength of the light emitting from the exciting light source is in a range of about 250 nm to about 490 nmt. The fluorescent powder is disposed around the exciting light source to receive the light emitting from the exciting light source. Furthermore, the material of the fluorescent powder includes (Tb3-x-yCexRey)Al5O12, (Me1-x-yEuxRey)3SiO5, YBO3:Ce3+, YBO3:Tb3+, SrGa2O4:Eu2+, SrAl2O4:Eu2+, (Ba,Sr)MgAl10:Eu2+, Mn2+, Y2O3:Eu3+, Y2O3:Bi3+, (Y,Gd)2O3:Eu3+, (Y,Gd)2O3:Bi3+, Y2O2S:Eu3+, Y2O2S:Bi3+, (Me1-xEux)ReS, 6MgO,As2O5:Mn, Mg3SiO4:Mn, BaMgAl10O17:Eu2+ and (Ca,Sr,Ba)5(PO4)3Cl:Eu2+,Gd3+. The white light LED of the invention provides high luminous efficiency and excellent color rendering index.

公开(公告)号：US08697460B2

公开(公告)日：2014-04-15

申请号：US13447977

申请日：2012-04-16

申请人： Hsin-Ming Lo ,  Shih-Chang Shei

发明人： Hsin-Ming Lo ,  Shih-Chang Shei

IPC分类号： H01L21/00

CPC分类号： H01L33/005 ,  C23C18/1216 ,  C23C18/1245 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/02601 ,  H01L21/02664 ,  H01L33/22

摘要： A method for patterning an epitaxial substrate with nano-patterns, includes: forming a plurality of zinc oxide nano-particles on an epitaxial substrate; dry-etching the epitaxial substrate exposed from the zinc oxide nano-particles to form nano-patterns corresponding to the zinc oxide nano-particles; and removing the zinc oxide nano-particles on the epitaxial substrate. A method for forming a light-emitting diode having a patterned epitaxial substrate with the nano-patterns is also disclosed.

摘要翻译： 一种用纳米图案形成外延衬底的方法，包括：在外延衬底上形成多个氧化锌纳米颗粒; 对从氧化锌纳米颗粒暴露的外延基板进行干蚀刻以形成对应于氧化锌纳米颗粒的纳米图案; 并除去外延衬底上的氧化锌纳米颗粒。 还公开了一种用于形成具有具有纳米图案的图案化外延衬底的发光二极管的方法。

公开(公告)号：US20130255535A1

公开(公告)日：2013-10-03

申请号：US13853845

申请日：2013-03-29

申请人： Chi-Jie Wang ,  Shih-Chang Shei ,  Cheng-Chou Chien

发明人： Chi-Jie Wang ,  Shih-Chang Shei

IPC分类号： C23C14/06 ,  C09D11/00

CPC分类号： C23C14/0629 ,  C09D11/00 ,  C09D11/02 ,  C09D11/037 ,  C09D11/52 ,  H01L31/0326 ,  Y02E10/50

摘要： The present invention provides a Cu2ZnSnSe4 (CZTSe) nanoink composition and a CZTSe sputtering target thereof for use in manufacturing an absorption layer of a thin-film solar cell. The CZTSe sputtering target includes a binary multiphase mixture and/or a ternary multiphase mixture. The CZTSe nanoink composition not only includes the binary multiphase mixture and/or ternary multiphase mixture but also includes a chelating agent. Any two of Cu, Zn, Sn, and Se are combined by the chelating agent to form the binary multiphase mixture. Alternatively, any three of Cu, Zn, Sn, and Se are combined by the chelating agent to form the ternary multiphase mixture. By manufacturing the absorption layer of the thin-film solar cell in the aforesaid manner, the absorption layer has a perfect quaternary monophase structure but does not manifest any impure phase detrimental to photoelectric conversion efficiency.

摘要翻译： 本发明提供了用于制造薄膜太阳能电池的吸收层的Cu2ZnSnSe4（CZTSe）纳米聚合物组合物和CZTSe溅射靶。 CZTSe溅射靶包括二元多相混合物和/或三元多相混合物。 CZTSe纳米组合物不仅包括二元多相混合物和/或三元多相混合物，而且还包括螯合剂。 Cu，Zn，Sn和Se中的任意两种通过螯合剂合并形成二元多相混合物。 或者，通过螯合剂将Cu，Zn，Sn和Se中的任何三种组合形成三元多相混合物。 通过以上述方式制造薄膜太阳能电池的吸收层，吸收层具有完美的四元单相结构，但不表现出任何不利于光电转换效率的不纯相。

公开(公告)号：US08487324B2

公开(公告)日：2013-07-16

申请号：US13405950

申请日：2012-02-27

申请人： Hsin-Ming Lo ,  Shih-Chang Shei

发明人： Hsin-Ming Lo ,  Shih-Chang Shei

IPC分类号： H01L33/00

CPC分类号： H01L33/20

摘要： A light-emitting diode includes: an epitaxial substrate including a base member, and a plurality of spaced apart first light-transmissive members; a light-emitting unit including a first-type semiconductor layer, a light-emitting layer, and a second-type semiconductor layer; and an electrode unit electrically connected to the light-emitting unit. The first-type semiconductor layer has a bottom film covering the first light-transmissive members, a plurality of spaced apart second light-transmissive members formed on a top face of the bottom film, and a top film formed on the bottom film to cover the second light-transmissive members.

摘要翻译： 发光二极管包括：外延基板，包括基底部件和多个间隔开的第一透光部件; 包括第一型半导体层，发光层和第二类型半导体层的发光单元; 以及电连接到所述发光单元的电极单元。 所述第一型半导体层具有覆盖所述第一透光性部件的底部膜，形成在所述底部膜的顶面上的多个间隔开的第二透光性部件和形成在所述底部膜上的顶部膜， 第二透光构件。

公开(公告)号：US20130001636A1

公开(公告)日：2013-01-03

申请号：US13446588

申请日：2012-04-13

申请人： Hsin-Ming LO ,  Shih-Chang SHEI

发明人： Hsin-Ming LO ,  Shih-Chang SHEI

IPC分类号： H01L33/52 ,  H01L33/40

CPC分类号： H01L27/15 ,  H01L33/50

摘要： A light-emitting diode includes: an epitaxial substrate; a light-emitting unit including a lower semiconductor layer, and at least two epitaxial units that are separately formed on the lower semiconductor layer, the epitaxial units cooperating with the lower semiconductor layer to define two light-emitting sources that are capable of emitting different colors of light; and an electrode unit including a first electrode which is formed on an exposed portion of the lower semiconductor layer exposed from the epitaxial units, and at least two second electrodes each of which is formed on a corresponding one of the epitaxial units. A method for forming a light-emitting diode is also disclosed.

摘要翻译： 发光二极管包括：外延衬底; 包括下半导体层的发光单元和分别形成在下半导体层上的至少两个外延单元，​​所述外延单元与下半导体层配合以限定能够发射不同颜色的两个发光源 的光 以及电极单元，其包括形成在从所述外延单元暴露的所述下半导体层的暴露部分上的第一电极，以及形成在相应的所述外延单元上的至少两个第二电极。 还公开了一种形成发光二极管的方法。

公开(公告)号：US07675077B2

公开(公告)日：2010-03-09

申请号：US11627013

申请日：2007-01-25

申请人： Shih-Chang Shei ,  Schang-Jing Hon ,  Shih-Chen Wei ,  Juh-Yuh Su

发明人： Shih-Chang Shei ,  Schang-Jing Hon ,  Shih-Chen Wei ,  Juh-Yuh Su

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/387 ,  H01L2933/0016

摘要： A light-emitting diode (LED) and a method for manufacturing the same are described. The light-emitting diode comprises: a conductive substrate including a first surface and a second surface opposite to the first surface; a metal bonding layer deposed on the first surface of the conductive substrate; a reflective metal layer deposed on the metal bonding layer; an N-type semiconductor layer deposed on the reflective metal layer; an active layer deposed on the N-type semiconductor layer; a P-type semiconductor layer deposed on the active layer; a window layer deposed on the P-type semiconductor layer, wherein a thickness of the window layer is substantially at least 50 μm, and the window layer is composed of a transparent conductive material; and a P-type electrode deposed on the window layer.

摘要翻译： 对发光二极管（LED）及其制造方法进行说明。 发光二极管包括：导电基板，包括第一表面和与第一表面相对的第二表面; 金属接合层，其设置在所述导电性基板的第一面上; 反射金属层，其设置在金属接合层上; 放置在反射金属层上的N型半导体层; 位于N型半导体层上的有源层; 位于有源层上的P型半导体层; 窗口层位于P型半导体层上，其中窗口层的厚度基本上至少为50μm，窗口层由透明导电材料构成; 以及放置在窗口层上的P型电极。