CZTSe NANOINK COMPOSITION AND SPUTTERING TARGET THEREOF
    1.
    发明申请
    CZTSe NANOINK COMPOSITION AND SPUTTERING TARGET THEREOF 审中-公开
    CZTSe NANOINK组合物和溅射目标

    公开(公告)号:US20130255535A1

    公开(公告)日:2013-10-03

    申请号:US13853845

    申请日:2013-03-29

    IPC分类号: C23C14/06 C09D11/00

    摘要: The present invention provides a Cu2ZnSnSe4 (CZTSe) nanoink composition and a CZTSe sputtering target thereof for use in manufacturing an absorption layer of a thin-film solar cell. The CZTSe sputtering target includes a binary multiphase mixture and/or a ternary multiphase mixture. The CZTSe nanoink composition not only includes the binary multiphase mixture and/or ternary multiphase mixture but also includes a chelating agent. Any two of Cu, Zn, Sn, and Se are combined by the chelating agent to form the binary multiphase mixture. Alternatively, any three of Cu, Zn, Sn, and Se are combined by the chelating agent to form the ternary multiphase mixture. By manufacturing the absorption layer of the thin-film solar cell in the aforesaid manner, the absorption layer has a perfect quaternary monophase structure but does not manifest any impure phase detrimental to photoelectric conversion efficiency.

    摘要翻译: 本发明提供了用于制造薄膜太阳能电池的吸收层的Cu2ZnSnSe4(CZTSe)纳米聚合物组合物和CZTSe溅射靶。 CZTSe溅射靶包括二元多相混合物和/或三元多相混合物。 CZTSe纳米组合物不仅包括二元多相混合物和/或三元多相混合物,而且还包括螯合剂。 Cu,Zn,Sn和Se中的任意两种通过螯合剂合并形成二元多相混合物。 或者,通过螯合剂将Cu,Zn,Sn和Se中的任何三种组合形成三元多相混合物。 通过以上述方式制造薄膜太阳能电池的吸收层,吸收层具有完美的四元单相结构,但不表现出任何不利于光电转换效率的不纯相。