公开(公告)号：US07804040B2

公开(公告)日：2010-09-28

申请号：US11438496

申请日：2006-05-22

申请人： Karl M. Brown ,  Semyon Sherstinksy ,  Vineet H. Mehta ,  Wei W. Wang ,  John A. Pipitone ,  Kurt J. Ahmann ,  Armando Valverde, Jr.

发明人： Karl M. Brown ,  Semyon Sherstinksy ,  Vineet H. Mehta ,  Wei W. Wang ,  John A. Pipitone ,  Kurt J. Ahmann ,  Armando Valverde, Jr.

IPC分类号： B23K9/00

CPC分类号： H01J37/3408 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76844

摘要： A physical vapor deposition reactor includes a vacuum chamber with a sidewall, a ceiling and a retractable wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, the retractable wafer support pedestal having an internal electrode and a grounded base with a conductive annular flange extending from the base. A metal sputter target at the ceiling is energized by a high voltage D.C. source. The reactor has an RF plasma source power generator with a frequency suitable for exciting kinetic electrons is coupled to either the sputter target or to the internal electrode of the pedestal. A removable shield protects the sidewall and is grounded by plural compressible conductive tabs dispersed at generally uniform intervals on the annular flange and engaging a bottom edge of the shield whenever the retractable wafer support pedestal is in an unretracted position, each of the uniform intervals being less than a wavelength corresponding to the frequency of the RF plasma source power generator.

摘要翻译： 物理气相沉积反应器包括具有侧壁的真空室，天花板和靠近室的地板附近的可缩回的晶片支撑基座，以及耦合到室的真空泵，所述可缩回晶片支撑基座具有内部电极和接地基座 具有从基座延伸的导电环形凸缘。 天花板上的金属溅射靶由高电压直流电源供电。 反应器具有RF等离子体源功率发生器，其具有适于激发动电子的频率，耦合到溅射靶或底座的内部电极。 可拆卸的屏蔽件保护侧壁并且通过在环形凸缘上以大致均匀间隔分散的多个可压缩导电片接地，并且每当可缩回的晶片支撑基座处于未受损的位置时，接合屏蔽的底部边缘，每个均匀间隔较小 比对应于RF等离子体源发生器的频率的波长。

公开(公告)号：US20070193982A1

公开(公告)日：2007-08-23

申请号：US11438496

申请日：2006-05-22

申请人： Karl Brown ,  Semyon Sherstinksy ,  Vineet Mehta ,  Wei Wang ,  John Pipitone ,  Kurt Ahmann ,  Armando Valverde

发明人： Karl Brown ,  Semyon Sherstinksy ,  Vineet Mehta ,  Wei Wang ,  John Pipitone ,  Kurt Ahmann ,  Armando Valverde

IPC分类号： B23K9/00

CPC分类号： H01J37/3408 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76844

摘要： A physical vapor deposition reactor includes a vacuum chamber with a sidewall, a ceiling and a retractable wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, the retractable wafer support pedestal having an internal electrode and a grounded base with a conductive annular flange extending from the base. A metal sputter target at the ceiling is energized by a high voltage D.C. source. The reactor has an RF plasma source power generator with a frequency suitable for exciting kinetic electrons is coupled to either the sputter target or to the internal electrode of the pedestal. A removable shield protects the sidewall and is grounded by plural compressible conductive tabs dispersed at generally uniform intervals on the annular flange and engaging a bottom edge of the shield whenever the retractable wafer support pedestal is in an unretracted position, each of the uniform intervals being less than a wavelength corresponding to the frequency of the RF plasma source power generator.

摘要翻译： 物理气相沉积反应器包括具有侧壁的真空室，天花板和靠近室的地板附近的可缩回的晶片支撑基座，以及耦合到室的真空泵，所述可缩回晶片支撑基座具有内部电极和接地基座 具有从基座延伸的导电环形凸缘。 天花板上的金属溅射靶由高电压直流电源供电。 反应器具有RF等离子体源功率发生器，其具有适于激发动电子的频率，耦合到溅射靶或底座的内部电极。 可拆卸的屏蔽件保护侧壁并且通过在环形凸缘上以大致均匀的间隔分散的多个可压缩导电片接地，并且每当可缩回的晶片支撑基座处于未受损的位置时，接合屏蔽件的底部边缘，每个均匀间隔较小 比对应于RF等离子体源发生器的频率的波长。