Abstract:
Disclosed is a photosensitive resin composition for a color filter protective layer including a cross-linkable alkali soluble resin including a repeating unit represented by the following Chemical Formula 1, a reactive unsaturated compound, a photopolymerization initiator, and a solvent. In Chemical Formulae 1 to 3, R1 to R6 and A1 to A3 are the same as in the detailed description.
Abstract:
Provided are a phase-change nonvolatile memory device and a manufacturing method thereof. The device includes: a substrate; and a stack structure disposed on the substrate and including a phase-change material layer. The phase-change material layer is formed of an alloy of antimony (Sb) and zinc (Zn), so that the phase-change memory device can stably operate at high speed and reduce power consumption.
Abstract:
Disclosed is a resin composition for a protective layer of a color filter including an acrylate-based resin including a repeating unit represented by each of Chemical Formulae 1 to 3, a melamine-based resin represented by Chemical Formula 4, a thermal acid generator (TAG), and a solvent.
Abstract:
Disclosed is a resin composition for a protective layer of a color filter including an acrylate-based resin including a repeating unit represented by each of Chemical Formulae 1 to 3, a melamine-based resin represented by Chemical Formula 4, a thermal acid generator (TAG), and a solvent.
Abstract:
Disclosed is a photosensitive resin composition for a color filter protective layer including a cross-linkable alkali soluble resin including a repeating unit represented by the following Chemical Formula 1, a reactive unsaturated compound, a photopolymerization initiator, and a solvent. In Chemical Formulae 1 to 3, R1 to R6 and A1 to A3 are the same as in the detailed description.
Abstract:
Provided are a phase-change nonvolatile memory device and a manufacturing method thereof. The device includes: a substrate; and a stack structure disposed on the substrate and including a phase-change material layer. The phase-change material layer is formed of an alloy of antimony (Sb) and zinc (Zn), so that the phase-change memory device can stably operate at high speed and reduce power consumption.