Abstract:
According to the present invention, there are provided a fluorine-containing sulfonate salt resin or fluorine-containing sulfonate ester resin having a structure of the following general formula (A) and a fluorine-containing N-sulfonyloxyimide resin having a repeating unit of the general formula (17). It is possible obtain a resist composition using the above resin such that the resist composition can attain high resolution, wide DOF, small LER and high sensitivity and form a good pattern shape.
Abstract:
A fluorine-containing sulfonate salt resin or fluorine-containing sulfonate ester resin having a structure of the following general formula (A) and a fluorine-containing N-sulfonyloxyimide resin having a repeating unit of the general formula (17). And a resist composition using the above resin such that the resist composition can attain high resolution, wide DOF, small LER and high sensitivity and form a good pattern shape.
Abstract:
In the present invention, a target alkoxycarbonylfluoroalkanesulfonic acid salt is obtained by using a halofluoroalkanoic acid ester as a starting raw material, sulfinating the halofluoroalkanoic acid ester in the presence of an amine (as a first step), and then, oxidizing the resulting sulfination product (as a second step). Further, an alkoxycarbonylfluoroalkanesulfinic acid onium salt, which is useful as a photoacid generator, is obtained by salt exchange reaction of the alkoxycarbonylfluoroalkanesulfonic acid salt.
Abstract:
A resist composition according to the present invention includes at least a base resin, a photoacid generator and a solvent, wherein the photoacid generator comprises a fluorine-containing sulfonic acid salt of the following general formula (4). In the formula, X independently represents a hydrogen atom or a fluorine atom; n represents an integer of 1 to 6; R1 represents a hydrogen atom, or an alkyl, alkenyl, oxoalkyl, aryl or aralkyl group; any of hydrogen atoms on carbons in R1 may be substituted with a substituent; R2 represents RAO or RBRCN; and A represents a divalent group. This fluorine-containing sulfonic acid salt can serve as a photoacid generator having high solubility in a resist solvent and thus can suitably be used for a resist composition such that the resist composition shows high resolution, wide DOF, small LER and high sensitivity to form a good pattern shape in lithographic processes.
Abstract:
A sulfonate resin having a repeating unit of the following general formula (3): where X each independently represents a hydrogen atom or a fluorine atom; n represents an integer of 1 to 10; R1 represents a hydrogen atom, a halogen atom, a C1-C3 alkyl group or a C1-C3 fluorine-containing alkyl group; R2 represents either RAO or RBRCN; and M+ represents a monovalent cation. The sulfonate resin has an onium sulfonate incorporated in a side chain thereof with an anion moiety of the sulfonate salt fixed to the resin and can suitably be used as a resist resin having a high solubility in propylene glycol monomethyl ether acetate.
Abstract translation:具有以下通式(3)的重复单元的磺酸树脂:其中X各自独立地表示氢原子或氟原子; n表示1〜10的整数, R1表示氢原子,卤素原子,C1-C3烷基或C1-C3含氟烷基; R2代表RAO或RBRCN; M +表示一价阳离子。 磺酸酯树脂在其侧链中具有磺酸盐,其中磺酸盐的阴离子部分固定在树脂上,并且可以适当地用作在丙二醇单甲醚乙酸酯中具有高溶解度的抗蚀剂树脂。
Abstract:
A resist composition according to the present invention includes at least a base resin, a photoacid generator and a solvent, wherein the photoacid generator comprises a fluorine-containing sulfonic acid salt of the following general formula (4). In the formula, X independently represents a hydrogen atom or a fluorine atom; n represents an integer of 1 to 6; R1 represents a hydrogen atom, or an alkyl, alkenyl, oxoalkyl, aryl or aralkyl group; any of hydrogen atoms on carbons in R1 may be substituted with a substituent; R2 represents RAO or RBRCN; and A represents a divalent group. This fluorine-containing sulfonic acid salt can serve as a photoacid generator having high solubility in a resist solvent and thus can suitably be used for a resist composition such that the resist composition shows high resolution, wide DOF, small LER and high sensitivity to form a good pattern shape in lithographic processes.
Abstract:
According to the present invention, there is provided a sulfonate resin having a repeating unit of the following general formula (3): where X each independently represents a hydrogen atom or a fluorine atom; n represents an integer of 1 to 10; R1 represents a hydrogen atom, a halogen atom, a C1-C3 alkyl group or a C1-C3 fluorine-containing alkyl group; R2 represents either RAO or RBRCN; and M+ represents a monovalent cation.The sulfonate resin has an onium sulfonate incorporated in a side chain thereof with an anion moiety of the sulfonate salt fixed to the resin and can suitably be used as a resist resin having a high solubility in propylene glycol monomethyl ether acetate.
Abstract translation:根据本发明,提供具有以下通式(3)的重复单元的磺酸树脂:其中X各自独立地表示氢原子或氟原子; n表示1〜10的整数, R1表示氢原子,卤素原子,C1-C3烷基或C1-C3含氟烷基; R2代表RAO或RBRCN; M +表示一价阳离子。 磺酸酯树脂在其侧链中具有磺酸盐,其中磺酸盐的阴离子部分固定在树脂上,并且可以适当地用作在丙二醇单甲醚乙酸酯中具有高溶解度的抗蚀剂树脂。
Abstract:
In the present invention, a target alkoxycarbonylfluoroalkanesulfonic acid salt is obtained by using a halofluoroalkanoic acid ester as a starting raw material, sulfinating the halofluoroalkanoic acid ester in the presence of an amine (as a first step), and then, oxidizing the resulting sulfination product (as a second step). Further, an alkoxycarbonylfluoroalkanesulfinic acid onium salt, which is useful as a photoacid generator, is obtained by salt exchange reaction of the alkoxycarbonylfluoroalkanesulfonic acid salt.