公开(公告)号：US07084479B2

公开(公告)日：2006-08-01

申请号：US10731377

申请日：2003-12-08

申请人： Shyng-Tsong Chen ,  Stefanie Ruth Chiras ,  Matthew Earl Colburn ,  Timothy Joseph Dalton ,  Jeffrey Curtis Hedrick ,  Elbert Emin Huang ,  Kaushik Arun Kumar ,  Michael Wayne Lane ,  Kelly Malone ,  Chandrasekhar Narayan ,  Satyanarayana Venkata Nitta ,  Sampath Purushothaman ,  Robert Rosenburg ,  Christy Sensenich Tyberg ,  Roy RongQing Yu

发明人： Shyng-Tsong Chen ,  Stefanie Ruth Chiras ,  Matthew Earl Colburn ,  Timothy Joseph Dalton ,  Jeffrey Curtis Hedrick ,  Elbert Emin Huang ,  Kaushik Arun Kumar ,  Michael Wayne Lane ,  Kelly Malone ,  Chandrasekhar Narayan ,  Satyanarayana Venkata Nitta ,  Sampath Purushothaman ,  Robert Rosenburg ,  Christy Sensenich Tyberg ,  Roy RongQing Yu

IPC分类号： H01L29/00 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/7682 ,  H01L21/76829 ,  H01L23/5222 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a multilevel microelectronic integrated circuit, air comprises permanent line level dielectric and ultra low-K materials are via level dielectric. The air is supplied to line level subsequent to removal of sacrificial material by clean thermal decomposition and assisted diffusion of byproducts through porosities in the IC structure. Optionally, air is also included within porosities in the via level dielectric. By incorporating air to the extent produced in the invention, intralevel and interlevel dielectric values are minimized.

公开(公告)号：US1860307A

公开(公告)日：1932-05-24

申请号：US43606830

申请日：1930-03-15

申请人： ROBERT ROSENBURG

发明人： BRINCK HARRY O

IPC分类号： A63B57/00

CPC分类号： A63B57/10