Abstract:
An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing having a backing member having a bonding surface, an inner electrode having a lower surface on one side and a bonding surface on the other side, and an outer electrode having a lower surface on one side and a bonding surface on the other side. At least one of the electrodes has a flange, which extends underneath at least a portion of the lower surface of the other electrode.
Abstract:
Provided is a method for preparing sulfuric acid by using hydrogen sulfide. The method comprises the following steps: (1) performing a reduction-oxidation reaction between an H2S feed gas and oxygen comprised in an oxygen-rich air to prepare SO2, controlling residual oxygen after the reduction-oxidation reaction step at a molar percentage of ≧2%; (2) cooling the product acquired in step (1) to a temperature between 390° C. and 430° C., and then performing a catalyzed oxidation reaction with oxygen, wherein the catalyzed oxidation reaction is performed in stages until the conversion rate of SO2 is ≧98.7% or the outlet concentration of SO2 is ≦550 mg/Nm3; and (3) cooling the product acquired in step (2) to a temperature ≧10° C. over the dew point temperature of H2SO4, then further cooling to a temperature between 60° C. and 120° C., collecting H2SO4 product, and subjecting the gas acquired after cooling to a coalescent separation before discharging directly into the atmosphere. Also provided is a heat exchanger, comprising a housing and several glass pipes, wherein the glass pipes are arranged within the housing along the direction of a long axis of the housing, arching between two lateral walls thereof, and used for circulating cooling medium; the adjacent glass pipes are connected head-to-tail, thereby forming at least one cooling medium flow path of unidirectional flow. The method for preparing sulfuric acid provides high removal efficiency of hydrogen sulfide, simple process flow, and allows for economic efficiency of apparatus and reasonable utilization of energy.
Abstract:
An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing having a backing member having a bonding surface, an inner electrode having a lower surface on one side and a bonding surface on the other side, and an outer electrode having a lower surface on one side and a bonding surface on the other side. At least one of the electrodes has a flange, which extends underneath at least a portion of the lower surface of the other electrode.
Abstract:
An apparatus and method for evenly distributing a polishing fluid onto a polishing pad during a chemical mechanical planarization process, wherein the polishing fluid is dispersed by way of a spray being emitted from a spray nozzle. The pattern of polishing fluid applied to the polishing pad can be modified by adjustment of geometric parameters of the spray nozzle. The apparatus is configured with actuating mechanisms for translating and rotating the spray nozzle relative to the polishing pad in order to adjust a pattern of distribution of the polishing fluid. The method of dispersing polishing fluid onto the polishing pad produces an even distribution of polishing fluid across a width of the polishing pad.
Abstract:
Apparatus and methods control CMP to uniformly polish a series of wafers. Average motor current I(avg) drawn by, and related average work W(avg) performed by, motors during CMP on the wafers reliably indicate quality of a roughness polishing characteristic of a polishing surface of a polishing pad. A conditioner controller controls a rate at which the quality of the polishing surface is restored by conditioning in relation to a rate of change of the quality of the polishing surface due to the CMP. Motor current is measured and averaged over many CMP-processed wafers. The method defines a baseline range of values of average work and controls conditioning according to whether average work is within the baseline range. When the polishing surface moves at constant velocity relative to each of the wafers that are being polished, a control signal based on average motor current represents the quality of the polishing characteristic.
Abstract:
A system and method of delivering a liquid to a CMP polishing pad includes supplying the liquid to a nozzle, the nozzle being oriented toward a polishing surface of the CMP polishing pad. The liquid flows at a rate of less than or equal to about 100 cc per minute. A pressurized carrier gas is also supplied to the nozzle. The liquid is substantially evenly sprayed from the nozzle onto the CMP polishing pad.
Abstract:
An invention is provided for a carrier head for use in a CMP process. The carrier head includes a metal plate that is capable of transferring a downforce to a wafer during a CMP operation. A plurality of vacuum holes is disposed within the metal plate, wherein each vacuum hole is positioned such that the vacuum hole is within five millimeters of an edge of the wafer during the CMP operation. In this manner, each vacuum hole can be positioned such that the vacuum hole is within an edge exclusion zone of the wafer during the CMP operation. In some embodiments, each vacuum hole is positioned such that the vacuum hole is within three millimeters of the edge of the wafer during the CMP operation, such as 2.7 millimeters from the edge of the wafer.
Abstract:
A pacemaker provided with a mode switching feature adapted to stabilize ventricular heart rate during atrial fibrillation. In a preferred embodiment of the invention, the device nominally operates in an atrial synchronized pacing mode such as DDD, DDDR, VDD or VDDR. In response to detection of atrial rhythm characteristics consistent with atrial fibrillation, the device switches into a non-atrial synchronized, ventricular rate stabilization pacing mode with the base ventricular pacing rate modulated on a beat by beat basis based upon preceding intrinsic or paced ventricular heartbeat intervals to adjust the pacing interval towards a desired preset rate stabilization target pacing interval which is typically less than the programmed base pacing interval of the device. While the ventricular rate stabilization mode is in effect, the current pacing interval is set equal to the preceding intrinsic or paced interval, with an increment if the preceding interval is less than the desired or target pacing interval, as typically will be the case, or with a decrement if the preceding interval is greater than the desired pacing interval. In a preferred embodiment of the invention, the device paces both the atria and ventricles in a DDI rate stabilization pacing mode with the ventricular pacing interval being modulated.
Abstract:
An implantable pacemaker employing an arrhythmia prevention pacing modality particularly optimized for inclusion in dual chamber pacemakers and anti-arrhythmia devices which include dual chamber pacemakers. When the pacing mode is in effect, the device alters timing of scheduled atrial and/or ventricular pacing pulses in response to depolarizations sensed during the refractory periods and to ventricular depolarizations sensed outside of the pacemaker's A-V escape intervals. The arrhythmia prevention pacing mode is activated and deactivated in conjunction with the operation of arrhythmia detection features which may also be employed by the device to trigger delivery of anti-arrhythmia therapies.
Abstract:
An extra-systolic stimulation (ESS) therapy addresses cardiac dysfunction including heart failure. ESS therapy employs atrial and/or ventricular extra-systoles via pacing-level stimulation to a heart. These extra-systoles must be timed correctly to achieve beneficial effects on myocardial mechanics (efficacy) while maintaining an extremely low level of risk of arrhythmia induction and excellent ICD-like arrhythmia sensing and detection (security). The present invention relates to therapy delivery guidance and options for improved ESS therapy delivery. These methods may be employed individually or in combinations in an external or implantable ESS therapy delivery device.