公开(公告)号：US08659167B1

公开(公告)日：2014-02-25

申请号：US13597824

申请日：2012-08-29

申请人： Philip H. Bowles ,  Paige M. Holm ,  Stephen R. Hooper ,  Raymond M. Roop

发明人： Philip H. Bowles ,  Paige M. Holm ,  Stephen R. Hooper ,  Raymond M. Roop

IPC分类号： H01L29/84

CPC分类号： H01L23/528 ,  B81C1/0023 ,  B81C1/00238 ,  B81C2201/019 ,  B81C2203/0792 ,  H01L2224/48091 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method (80) entails providing (82) a structure (117), providing (100) a controller element (102, 24), and bonding (116) the controller element to an outer surface (52, 64) of the structure. The structure includes a sensor wafer (92) and a cap wafer (94). Inner surfaces (34, 36) of the wafers (92, 94) are coupled together, with sensors (30) interposed between the wafers. One wafer (94, 92) includes a substrate portion (40, 76) with bond pads (42) formed on its inner surface (34, 36). The other wafer (94, 92) conceals the substrate portion (40, 76). After bonding, methodology (80) entails forming (120) conductive elements (60) on the element (102, 24), removing (126) material sections (96, 98, 107) from the wafers to expose the bond pads, forming (130) electrical interconnects (56), applying (134) packaging material (64), and singulating (138) to produce sensor packages (20, 70).

摘要翻译： 方法（80）需要提供（82）结构（117），提供（100）控制器元件（102,24），并将控制器元件（116）结合（116）到结构的外表面（52,64）。 该结构包括传感器晶片（92）和盖晶片（94）。 晶片（92,94）的内表面（34,36）被耦合在一起，传感器（30）置于晶片之间。 一个晶片（94,92）包括具有形成在其内表面（34,36）上的接合焊盘（42）的衬底部分（40,76）。 另一个晶片（94,92）隐藏基板部分（40,76）。 在结合之后，方法学（80）需要在元件（102,24）上形成（120）导电元件（60），从晶片去除（126）材料部分（96,98,107）以暴露接合焊盘，形成 130）电互连（56），施加（134）包装材料（64）和单分离（138）以产生传感器封装（20,70）。

公开(公告)号：US5291607A

公开(公告)日：1994-03-01

申请号：US965549

申请日：1992-10-23

申请人： Ljubisa Ristic ,  William C. Dunn ,  Bertrand F. Cambou ,  Lewis E. Terry ,  Raymond M. Roop

发明人： Ljubisa Ristic ,  William C. Dunn ,  Bertrand F. Cambou ,  Lewis E. Terry ,  Raymond M. Roop

IPC分类号： H02H5/00 ,  G06F15/20 ,  G01D5/00

CPC分类号： H02H5/00

摘要： A microprocessor having a monolithically integrated environmental sensor is provided. The microprocessor is shielded from an environmental signal by isolation which is specific to the type of sensor used, thereby allowing the sensor to be exposed to the environmental signal. Optionally, high current drive circuitry is integrated with the microprocessor-sensor circuit to provide a monolithic device which allows control of power loads based in part on output from an environmental sensing device.

摘要翻译： 提供具有单片集成环境传感器的微处理器。 微处理器通过隔离来屏蔽环境信号，这是特定于使用的传感器类型，从而允许传感器暴露于环境信号。 可选地，高电流驱动电路与微处理器传感器电路集成以提供单片设备，其允许部分地基于来自环境感测设备的输出来控制功率负载。

公开(公告)号：US20160356740A1

公开(公告)日：2016-12-08

申请号：US14731795

申请日：2015-06-05

申请人： Patrice M. Parris ,  Weize Chen ,  Richard J. de Souza ,  Jose Fernandez Villasenor ,  Md M. Hoque ,  David E. Niewolny ,  Raymond M. Roop

发明人： Patrice M. Parris ,  Weize Chen ,  Richard J. de Souza ,  Jose Fernandez Villasenor ,  Md M. Hoque ,  David E. Niewolny ,  Raymond M. Roop

IPC分类号： G01N27/414 ,  B01L3/00

CPC分类号： G01N27/4148 ,  B01L3/5027 ,  B01L3/502715 ,  B01L3/50273 ,  B01L2200/10 ,  B01L2200/12 ,  B01L2300/04 ,  B01L2300/041 ,  B01L2300/0645 ,  B01L2300/0887 ,  B01L2400/0415 ,  B01L2400/0418 ,  G01N27/28 ,  G01N27/414 ,  H01L21/67259 ,  H01L29/4933 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7833 ,  H01L31/119

摘要： Protected sensor field effect transistors (SFETs). The SFETs include a semiconductor substrate, a field effect transistor, and a sense electrode. The SFETs further include an analyte-receiving region that is supported by the semiconductor substrate, is in contact with the sense electrode, and is configured to receive an analyte fluid. The analyte-receiving region is at least partially enclosed. In some embodiments, the analyte-receiving region can be an enclosed analyte channel that extends between an analyte inlet and an analyte outlet. In these embodiments, the enclosed analyte channel extends such that the analyte inlet and the analyte outlet are spaced apart from the sense electrode. In some embodiments, the SFETs include a cover structure that at least partially encloses the analyte-receiving region and is formed from a cover material that is soluble within the analyte fluid. The methods include methods of manufacturing the SFETs.

公开(公告)号：US20140015123A1

公开(公告)日：2014-01-16

申请号：US13546902

申请日：2012-07-11

申请人： Philip H. Bowles ,  Paige M. Holm ,  Stephen R. Hooper ,  Raymond M. Roop

发明人： Philip H. Bowles ,  Paige M. Holm ,  Stephen R. Hooper ,  Raymond M. Roop

IPC分类号： H01L21/56 ,  H01L23/498 ,  H01L21/78

CPC分类号： B81B7/0006 ,  B81B7/0077 ,  B81B2201/02 ,  B81C1/0023 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method (70) of forming sensor packages (20) entails providing a sensor wafer (74) having sensors (30) formed on a side (26) positioned within areas (34) delineated by bonding perimeters (36), and providing a controller wafer (82) having control circuitry (42) at one side (38) and bonding perimeters (46) on an opposing side (40). The bonding perimeters (46) of the controller wafer (82) are bonded to corresponding bonding perimeters (36) of the sensor wafer (74) to form a stacked wafer structure (48) in which the control circuitry (42) faces outwardly. The controller wafer (82) is sawn to reveal bond pads (32) on the sensor wafer (74) which are wire bonded to corresponding bond pads (44) formed on the same side (38) of the wafer (82) as the control circuitry (42). The structure (48) is encapsulated in packaging material (62) and is singulated to produce the sensor packages (20).

摘要翻译： 形成传感器封装（20）的方法（70）需要提供传感器晶片（74），传感器晶片（74）具有形成在位于通过接合周边（36）所描绘的区域（34）内的侧面（26）上的传感器（30），并且提供控制器 具有在一侧（38）处的控制电路（42）和在相对侧（40）上的接合周边（46）的晶片（82）。 控制器晶片（82）的接合周边（46）被接合到传感器晶片（74）的对应的接合周边（36），以形成其中控制电路（42）面向外的堆叠的晶片结构（48）。 锯切控制器晶片（82）以露出传感器晶片（74）上的接合焊盘（32），该接合焊盘引线键合到形成在晶片（82）的同一侧（38）上的对应接合焊盘（44） 电路（42）。 结构（48）被封装在包装材料（62）中，并被分割以产生传感器封装（20）。

公开(公告)号：US5260596A

公开(公告)日：1993-11-09

申请号：US681258

申请日：1991-04-08

申请人： William C. Dunn ,  H. Ming Liaw ,  Ljubisa Ristic ,  Raymond M. Roop

发明人： William C. Dunn ,  H. Ming Liaw ,  Ljubisa Ristic ,  Raymond M. Roop

IPC分类号： H01L27/20 ,  H03H9/05 ,  H03H9/17 ,  H03H9/19 ,  H03H9/24 ,  H01L29/66 ,  H01L29/96

CPC分类号： H03H9/173 ,  H01L27/20 ,  H03H9/0542 ,  H03H9/2426 ,  H03H9/2457

摘要： A structure is provided to integrate bulk structure resonators into a monolithic integrated circuit chip. The chip also contains the remaining circuit components (17, 21, 24) required for the desired system function. Micromachining techniques are used to fabricate both support and a cavity (11, 27, 28) which allows mechanical vibration without interference. Alternative embodiments incorporate the use of non-piezoelectric mechanical resonators (14), quartz crystal resonators (18) and thin film piezoelectric resonators (22). Each type of resonator is used for the range of frequencies to which it is suited, providing a family of monolithic resonators capable of being used with integrated circuits having operating frequencies from a few hundred hertz to over 500 Mhz.

摘要翻译： 提供了将体结构谐振器集成到单片集成电路芯片中的结构。 该芯片还包含所需系统功能所需的其余电路元件（17,21,24）。 微加工技术用于制造支撑件和腔体（11,27,28），其允许机械振动而不受干扰。 替代实施例包括使用非压电机械谐振器（14），石英晶体谐振器（18）和薄膜压电谐振器（22）。 每种类型的谐振器用于其适合的频率范围，提供能够与具有几百赫兹至500Mhz以上的工作频率的集成电路一起使用的单片谐振器系列。

公开(公告)号：US09927392B2

公开(公告)日：2018-03-27

申请号：US14459841

申请日：2014-08-14

申请人： Raymond M. Roop ,  Jose Fernandez Villasenor ,  Stephen R. Hooper ,  Patrice M. Parris

发明人： Raymond M. Roop ,  Jose Fernandez Villasenor ,  Stephen R. Hooper ,  Patrice M. Parris

IPC分类号： G01N27/414 ,  H05K3/10

CPC分类号： G01N27/4148

摘要： Embodiments of sensing devices include one or more integrated circuit (IC) die, a housing, and a fluid barrier material. Each IC die includes an electrode-bearing surface and a contact surface. One of the die includes an SFET with a sensing electrode proximate to the electrode-bearing surface. The same or a different die includes a reference electrode proximate to the electrode-bearing surface. The die(s) also include IC contacts at the contact surface(s), and conductive structures coupled between the SFET, the reference electrode, and the IC contacts. The housing includes a mounting surface, and housing contacts formed at the mounting surface. The IC contacts are coupled to the housing contacts. The fluid barrier material is positioned between the mounting surface and the IC die. The fluid barrier material provides a fluid barrier between the IC and housing contacts and a space that encompasses the sensing electrode and the reference electrode.

公开(公告)号：US09857329B2

公开(公告)日：2018-01-02

申请号：US15251141

申请日：2016-08-30

申请人： Patrice M. Parris ,  Weize Chen ,  Richard J. de Souza ,  Jose Fernandez Villasenor ,  Md M. Hoque ,  David E. Niewolny ,  Raymond M. Roop

发明人： Patrice M. Parris ,  Weize Chen ,  Richard J. de Souza ,  Jose Fernandez Villasenor ,  Md M. Hoque ,  David E. Niewolny ,  Raymond M. Roop

IPC分类号： G01N27/403 ,  G01N27/414 ,  B01L3/00 ,  H01L21/67 ,  G01N27/28 ,  H01L31/119 ,  H01L29/66

CPC分类号： G01N27/4148 ,  B01L3/5027 ,  B01L3/502715 ,  B01L3/50273 ,  B01L2200/10 ,  B01L2200/12 ,  B01L2300/04 ,  B01L2300/041 ,  B01L2300/0645 ,  B01L2300/0887 ,  B01L2400/0415 ,  B01L2400/0418 ,  G01N27/28 ,  G01N27/414 ,  H01L21/67259 ,  H01L29/4933 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7833 ,  H01L31/119

摘要： Protected sensor field effect transistors (SFETs). The SFETs include a semiconductor substrate, a field effect transistor, and a sense electrode. The SFETs further include an analyte-receiving region that is supported by the semiconductor substrate, is in contact with the sense electrode, and is configured to receive an analyte fluid. The analyte-receiving region is at least partially enclosed. In some embodiments, the analyte-receiving region can be an enclosed analyte channel that extends between an analyte inlet and an analyte outlet. In these embodiments, the enclosed analyte channel extends such that the analyte inlet and the analyte outlet are spaced apart from the sense electrode. In some embodiments, the SFETs include a cover structure that at least partially encloses the analyte-receiving region and is formed from a cover material that is soluble within the analyte fluid. The methods include methods of manufacturing the SFETs.

公开(公告)号：US09494550B1

公开(公告)日：2016-11-15

申请号：US14731795

申请日：2015-06-05

申请人： Patrice M. Parris ,  Weize Chen ,  Richard J. de Souza ,  Jose Fernandez Villasenor ,  Md M. Hoque ,  David E. Niewolny ,  Raymond M. Roop

发明人： Patrice M. Parris ,  Weize Chen ,  Richard J. de Souza ,  Jose Fernandez Villasenor ,  Md M. Hoque ,  David E. Niewolny ,  Raymond M. Roop

IPC分类号： G01N27/403 ,  G01N27/414 ,  B01L3/00 ,  H01L21/67 ,  H01L31/119 ,  H01L29/66

CPC分类号： G01N27/4148 ,  B01L3/5027 ,  B01L3/502715 ,  B01L3/50273 ,  B01L2200/10 ,  B01L2200/12 ,  B01L2300/04 ,  B01L2300/041 ,  B01L2300/0645 ,  B01L2300/0887 ,  B01L2400/0415 ,  B01L2400/0418 ,  G01N27/28 ,  G01N27/414 ,  H01L21/67259 ,  H01L29/4933 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7833 ,  H01L31/119

摘要： Protected sensor field effect transistors (SFETs). The SFETs include a semiconductor substrate, a field effect transistor, and a sense electrode. The SFETs further include an analyte-receiving region that is supported by the semiconductor substrate, is in contact with the sense electrode, and is configured to receive an analyte fluid. The analyte-receiving region is at least partially enclosed. In some embodiments, the analyte-receiving region can be an enclosed analyte channel that extends between an analyte inlet and an analyte outlet. In these embodiments, the enclosed analyte channel extends such that the analyte inlet and the analyte outlet are spaced apart from the sense electrode. In some embodiments, the SFETs include a cover structure that at least partially encloses the analyte-receiving region and is formed from a cover material that is soluble within the analyte fluid. The methods include methods of manufacturing the SFETs.

摘要翻译： 保护传感器场效应晶体管（SFET）。 SFET包括半导体衬底，场效应晶体管和感测电极。 SFET还包括由半导体衬底支撑的分析物接收区域，与感测电极接触，并被配置为接收分析物流体。 分析物接收区域至少部分封闭。 在一些实施方案中，分析物接收区域可以是在分析物入口和分析物出口之间延伸的封闭分析物通道。 在这些实施例中，封闭的分析物通道延伸使得分析物入口和分析物出口与感测电极间隔开。 在一些实施例中，SFET包括至少部分地包围分析物接收区并由可溶于分析物流体内的覆盖材料形成的覆盖结构。 这些方法包括制造SFET的方法。

公开(公告)号：US20160047775A1

公开(公告)日：2016-02-18

申请号：US14459841

申请日：2014-08-14

申请人： RAYMOND M. ROOP ,  JOSE FERNANDEZ VILLASENOR ,  STEPHEN R. HOOPER ,  PATRICE M. PARRIS

发明人： RAYMOND M. ROOP ,  JOSE FERNANDEZ VILLASENOR ,  STEPHEN R. HOOPER ,  PATRICE M. PARRIS

IPC分类号： G01N27/414 ,  H05K3/10

CPC分类号： G01N27/4148

摘要： Embodiments of sensing devices include one or more integrated circuit (IC) die, a housing, and a fluid barrier material. Each IC die includes an electrode-bearing surface and a contact surface. One of the die includes an SFET with a sensing electrode proximate to the electrode-bearing surface. The same or a different die includes a reference electrode proximate to the electrode-bearing surface. The die(s) also include IC contacts at the contact surface(s), and conductive structures coupled between the SFET, the reference electrode, and the IC contacts. The housing includes a mounting surface, and housing contacts formed at the mounting surface. The IC contacts are coupled to the housing contacts. The fluid barrier material is positioned between the mounting surface and the IC die. The fluid barrier material provides a fluid barrier between the IC and housing contacts and a space that encompasses the sensing electrode and the reference electrode.

摘要翻译： 感测装置的实施例包括一个或多个集成电路（IC）模具，壳体和流体阻挡材料。 每个IC芯片包括电极承载表面和接触表面。 芯片中的一个包括具有靠近电极承载表面的感测电极的SFET。 相同或不同的管芯包括靠近电极承载表面的参考电极。 模具还包括在接触表面处的IC触点，以及耦合在SFET，参考电极和IC触点之间的导电结构。 壳体包括安装表面和形成在安装表面处的壳体触点。 IC触点耦合到壳体触点。 流体阻挡材料位于安装表面和IC芯片之间。 流体阻挡材料在IC和壳体触点之间提供流体屏障，以及包围感测电极和参考电极的空间。

公开(公告)号：US09018029B1

公开(公告)日：2015-04-28

申请号：US14099502

申请日：2013-12-06

申请人： Philip H. Bowles ,  Paige M. Holm ,  Stephen R. Hooper ,  Lianjun Liu ,  Raymond M. Roop

发明人： Philip H. Bowles ,  Paige M. Holm ,  Stephen R. Hooper ,  Lianjun Liu ,  Raymond M. Roop

IPC分类号： B81B7/02 ,  B81C1/00

CPC分类号： B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C1/00293 ,  B81C1/00793 ,  B81C2203/0145

摘要： Embodiments of methods of fabricating a sensor device include attaching first and second die to one another to define first and second cavities in which first and second sensors of the sensor device are disposed, respectively. The second die has an opening in communication with the second cavity. The methods further include obstructing the opening, attaching a third die to the second die. The first cavity is hermetically sealed by attaching the first and second die. The second cavity is hermetically sealed by attaching the third die to the second die.

摘要翻译： 制造传感器装置的方法的实施例包括将第一和第二管芯彼此附接以限定其中分别设置有传感器装置的第一和第二传感器的第一和第二腔。 第二模具具有与第二腔体连通的开口。 所述方法还包括阻挡开口，将第三模具附接到第二模具。 通过连接第一和第二模具将第一腔密封。 通过将第三模具附接到第二模具而使第二腔体气密地密封。